• 한국세라믹학회지
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• 제34권8호
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• 전자공학회논문지D
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• 제35D권5호
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• pp.80-86
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• 1998

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.228-231
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• 2015

We investigated the adsorption structures and the initial growth mode of ultra-thin Al films on a W(110) surface at a high temperature. When Al atoms were adsorbed on the W(110) at the substrate temperature of 1100 K and with coverage of 0.5ML, Al atoms formed a p($2{\times}1$) double-domain structure. When the coverage was 1.0 ML, the double domain of a hexagonal structure (fcc(111) face) rotated ${\pm}5^{\circ}$ from the [100] direction of the W(110) surface and another distorted hexagonal structure were found. Low-energy electron diffraction results along with ion scattering spectroscopy results showed that the Al atoms followed the Volmer-Weber growth mode at a high temperature.

• Weed & Turfgrass Science
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• 제5권4호
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• pp.268-273
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• 2016

Potassium is well-known to improve turfgrass tolerance to environmental stresses such as low temperature and drought stress. Low mowing height reduces leaf area of turfgrass that is main place for photosynthesis and carbohydrate production. Closely-mowed turf would suffer from summer decline by low level of carbohydrate resulted from low photosynthesis of reduced leaf area. The objective of the study is to investigate K rate and mowing height for Kentucky bluegrass. The K rate treatments were 5, 10, and $20g\;K_2O\;m^{-2}$ for the low, medium and high K rates, respectively. The bi-weekly mowing treatment was made for treatments. Mowing was implemented at 40 and 100 mm using a rotary mower. Regardless K rates, the high mowing height would be required when the air temperature is higher than $28.5^{\circ}C$ and high turfgrass quality of Kentucky bluegrass is needed. When the air temperature is optimal for cool-season grass, the high mowing height and the low K rate is needed for the root length of Kentucky bluegrass.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• Journal of Plant Biology
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• 제12권2호
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• pp.23-27
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• 1969

The promotive effect of Ca in semi-vitro culture of Oenothera biennis pollen was by and large identical to that of in vitro systems. This promotive effect became additive when boron was supplemented to the media and even more so if K was further supplemented. No such Ca action was observed then performed under the conditions of relatively low temperature. An uncoupling agent of ATP in respiration, DNP, inhibited the promotive action of B, but not that of Ca. The inhibitory effect of DNP was greater at low temperatures. IAA was rather inhibitory on pollen growth in semi-vitro culture, even much greater than it if DNP was supplemented to the IAA-containing media.

• 대한기계학회논문집
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• 제19권2호
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• pp.402-407
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• 1995

The effects of room temperature and strain aging treatment are discussed on the critical condition for the onset of growth of non-propagating cracks on 0.15% C low carbon steel, with special emphasis on the length of the critical non-propagating crack and on the crack opening displacement(COD) at the crack tip. It is found from the experimental analysis that room temperature and strain aging of a fatigue pre-cracked specimen introduced the closure of a crack tip of the pre-crack and the reduction of crack opening displacement at the wake of crack, together with an improvement in crack growth resistance of the microstructure. This may cause an increase in the endurance limit of the specimen, through the enhancement of effective stress for the onset of growth of the critical non-propagating crack.

• 한국재료학회지
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• 제9권12호
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• pp.1216-1221
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• 1999

TMGa와 유전체 장벽방전에 기초한 질소함유 활성종을 이용하여 (0001) 사파이어 기판위에 GaN 박막을 저온에서 성장시켰다. III-V 질소화합물 반도체의 에피막 성장에 있어서 암모니아는 유기금속 화학증착법에서 지금까지 알려진 가장 보편적인 질소 공급원이며 충분한 질소공급을 위해 $1000^{\circ}C$ 이상의 고온 성장이 필수적이다. GaN 박막을 비교적 저온에서 성장시키기 위하여 질소 공급원으로 암모니아 대신 유전체 장벽방전을 이용하였다. 유전체 장벽방전은 전극사이에 유전체 장벽을 설치하여 arc를 조절하는 방전이며 수 기압의 높은 공정압력보다 훨씬 높으므로 기판표면까지 전달하는데도 이점이 있다. GaN 박막의 결정성과 표면형상은 성장온도, 완충층에 따라 변화하였으며, $700^{\circ}C$의 저온에서도 우수한 (0001) 배향성을 갖는 GaN 박막을 성장할 수 있었다.

• 한국표면공학회지
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• 제33권5호
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• pp.373-380
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• 2000

The flow melting behavior of the electrolytic tinplate during reflow treatment was investigated in terms of morphology and structure of coating layers which were electrodeposited with variation of electrolyte temperature. It was commonly found that the nucleation density of the electrodeposits showed little difference with the electrolyte temperature, and the growth of electrodeposited tin occurred along <100> direction of (002) plane. At low electrolyte temperature, the (002) plane of tin nucleated paralleling to the substrate and grew perpendicularly to the substrate, which rendered porous rod-like deposits. With increasing the temperature, the (002) plane nucleated declining $15^{\circ}$ to the substrate and also grew to the normal <100> direction, which enabled lateral growth of the tin crystals and rendered compact deposits. During reflow treatment, the matte deposit transformed to the reflowed state via transition regions consisted of contraction, island formation, and wetting . The matte deposits formed at low temperature exhibited wide transition regions because of poor thermal transfer between crystals due to their porous nature. While that formed at high temperature transformed very rapidly to the reflowed state by enhanced thermal transfer between the compact crystals.