• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.194-195
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• 2006

개인 휴대 통신 기기의 급속한 발달로 인해 부품의 소형화, 고집적화가 중요한 요소로 대두되고 있으며 이를 위해서는 모듈내부에 3차원적인 수동소자의 내장이 가능한 LTCC (Low Temperature Co-fired Ceramics) 공정이 각광받고 있다. Embedded Capacitor를 제조하기 위해 유전율이 7.6과 6.5인 LTCC 재료를 이종접합 하여 제조하였으며 이종재료의 수축거동 차이에 의한 camber가 발생하였다. 이를 해결하고 또한 고주파 부품용 정밀회로 패턴을 구 현하기 위해 PLAS 방식의 Constrained Sintering 공정을 적용하여 camber 문제를 해결하였으며 capacitance 값이 두 이종재료의 유전율과 1:1로 비례하지 않았는데 이는 유전율 65 tape에 잔존하는 기공 때문으로 판단되며 미세구조로써 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.43-47
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• 2004

A coupler or divider is a microwave passive component used for power coupling or dividing. Regarding the trend of current telecommunication systems monolithic integration of passive components is highly desirable. In this study by the LTCC(Low temperature co-fired ceramics) technology a 2012 size type dual band coupler with multi-layer structure was fabricated. To achieve the desired coupling values for both DCS and EGSM bands, broad side coupled patterns were used with multi-layer structure. Its characteristics such as coupling, insertion loss, isolation and directivity values were measured and compared with simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.524-530
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• 2006

$xCa(Li_{1/4}Nb_{3/4})O_{3}-(1-x)CaTiO_{3}$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to low-temperature co-fired ceramic(LTCC) technology. The addition of $5{\sim}15wt%$ ZBS glass ensured successful sintering below $900\;^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the quality factor($Q{\times}f_{0}$) significantly due to the formation of an excessive liquid and second phases. As for the addition of $CaTiO_3$, the dielectric constant(${\epsilon}_r$) and temperature coefficient of resonant frequency(${\tau}_f$) increased, while the quality factor($Q{\times}f_{0}$) did not show an apparent change. The sintered $0.9Ca(Li_{1/4}Nb_{3/4})O_{3}-0.1CaTiO_{3}$ specimen at $900\;^{\circ}C$ with 10 wt% ZBS glass demonstrated 39.6 in dielectric constant(${\epsilon}_r$), 4,400 in quality factor$(Q{\times}f_{0}),\;and\;-11ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.172-177
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• 2003

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of $BaTi_4O_9$-based ceramics were studied to develop the materials for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of$875{\circ}C$. The microwave dielectric properties were k=32, Q＊f=9000 GHz, ${ au}_f$=10 ppm/${\circ}C$. As the amount of glass increased, phase decompositions from $BaTi_4O_9;to;BaTi_5O_{11};and;Ba_4Ti_{13}O_{30}$ was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.371-374
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• 2004

저온동시 소성용(low temperature co-fired ceramics, LTCC) 마이크로파 유전체을 만들기 위해 $Ca(Li_{1/4}Nb_{3/4})O_3$ 마이크로파 유전체 세라믹스에 zinc-borosililcate glass를 첨가하여 소결 특성과 마이크로파 유전 특성을 조사하였다. $Ca(Li_{1/4}Nb_{3/4})O_3$과 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 zinc-borosilicate를 $5{\sim}30wt%$ 첨가하여 소결한 결과 $875{\sim}925^{\circ}C$에서 동시 소성이 가능한 것으로 확인되었으며 zinc-borosilicate glass의 함량이 증가할수록 저온에서 소성이 가능하였지만 과량의 액상과 2차상이 형성되면서 유전율과 품질계수가 저하되는 경향을 나타내었다. $Ca(Li_{1/4}Nb_{3/4})O_3$에 5wt%의 zinc-borosilicate를 첨가하여 $900^{\circ}C$에서 소성한 결과 가장 우수한 유전 특성$(\epsilon_r=17.45,\;Q{\times}f_0=5487)$을 나타내었고, 유전율을 높이기 위해 $CaTiO_3$를 0.3mol% 첨가한 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 10wt%의 zinc-borosilicate를 첨가하여 $925^{\circ}C$에서 소성한 결과 가장 우수한 유전특성$(\epsilon_r=44.92,\;Q{\times}f_0=5567)$을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.61-64
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• 2000

We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.1-5
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• 2000

Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.