• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.737-741
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• 2003

The wind power system is spotlighted as one of the no-pollution power generation systems. The system uses winds as power source that are rotated the blade and the rotating power from blade generate the electricity power. Gearbox needs to transfer the wind powers that have the high-torque-low-speed characteristics to generator that have the low-torque-high-speed characteristics. Because the wind power system generally locates the remote place like seaside or mountainside and the gearbox installs on the limited and high placed space, the gearbox of the wind power system is required the optimal space design and high reliability. In this paper, the structure of the gearbox is proposed to achieve the optimal space and efficiency by compounding the planetary gear train that has the high power density and parallel type gear train that has the long service life. The design parameters that are affected the service life are studied. The gear ratio and face width are investigated as an affected parameter for design sensitivity of service life.

• Textile Coloration and Finishing
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• v.6 no.2
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• pp.17-23
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• 1994

Carboxylic acid group gradient surface where the density of carboxylic acid groups changes gradually along the sample length was prepared. Carboxylic acid group gradient surface was produced by the treatment of low density polyethylene sheet using a corona with gradually increasing power, followed by the grad polymerization of acrylic acid. The prepared gradient surface was characterized by the measurement of water contact angle, Fourier-transform infrared spectroscopy in the attenuated total reflectance mode, and electron spectroscopy for chemical analysis.

• Progress in Medical Physics
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• v.32 no.4
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• pp.165-171
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• 2021

Purpose: This study aimed to evaluate the effect of collimator width on effective atomic number (EAN), relative electron density (RED), and stopping power ratio (SPR) measured by dual-layer dual-energy computed tomography (DL-DECT). Methods: CIRS electron density calibration phantoms with two different arrangements of material plugs were scanned by DL-DECT with two different collimator widths. The first phantom included two dense bone plugs, while the second excluded dense bone plugs. The collimator widths selected were 64 mm×0.625 mm for wider collimators and 16 mm×0.625 mm for narrow collimators. The scanning parameters were 120 kVp, 0.33 second gantry rotation, 3 mm slice thickness, B reconstruction filter, and spectral level 4. An image analysis portal system provided by a computed tomography (CT) manufacturer was used to derive the EAN and RED of the phantoms from the combination of low energy and high energy CT images. The EAN and RED were compared between the images scanned using the two different collimation widths. Results: The CT images with the wider collimation width generated more severe artifacts, particularly with high-density material (i.e., dense bone). RED and EAN for tissues (excluding lung and bones) with the wider collimation width showed significant relative differences compared to the theoretical value (4.5% for RED and 20.6% for EAN), while those with the narrow collimation width were closer to the theoretical value of each material (2.2% for EAN and 2.3% for RED). Scanning with narrow collimation width increased the accuracy of SPR estimation even with high-density bone plugs in the phantom. Conclusions: The effect of CT collimation width on EAN, RED, and SPR measured by DL-DECT was evaluated. In order to improve the accuracy of the measured EAN, RED, and SPR by DL-DECT, CT scanning should be performed using narrow collimation widths.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.704-710
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• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.8
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• pp.1101-1107
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• 2013

A light emitting diodes(LED) lighting has been increasingly used due to its low power consumption, long life time, high efficiency, and environment friendly characteristics. Also various power converters has been applied to drive these LED lighting. Among many power converters, a LLC resonant converter could be applied for LED lighting because of its high efficiency and high power density. Furthermore, the function of power factor correction(PFC) might be added. In this paper, 1-stage asymmetrical LLC resonant converter is proposed. The proposed converter performs both input-current harmonics reduction and PFC using the discontinuous conduction mode(DCM). The proposed 1-stage LLC resonant converter approach has the lower voltage stress across switching devices and achieve the zero voltage switching(ZVS) in switching devices. To verify the performance of the proposed converter, simulation and experimental results from a 300[W] prototype are provided.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.589-590
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• 2013

The fast development of electronic devices towards wireless, portable and multi-functionality desperately needs the self-powered and low maintenance power sources. The possibility to coupling the nanogenerator to wearable and portable electronic device facilitates the self powered device with independent and self sustained power source. Nanogenerator has ability to convert the low frequency mechanical vibration to electrical energy which is utilized to drive the electronic device [1]. The self powered power source has the ability to generate the power from environment and human activity has attracted much interest because of place and time independent. The human body motion based energy harvesting has created huge impact for future self powered electronics device applications. The power generated from the human body motion is enough to operate the future electronic devices. The energy harvesting from human body motion based on triboelectric effect has simple, cost-effective method [2, 3] and meet the required power density of devices. However, its output is still insufficient to driving electronic devices in continues manner so new technology and new device architecture required to meet required power. In the present work, we have fabricated the triboelectric nanogenerator using PDMS polymer. We have studied detail about the power output of the device with respect to different polymer thickness and varied separation distance.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.6
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• pp.49-57
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• 2013

In this study, we fabricated a parallelly connected Li-ion battery/supercapacitor hybrid cell to combine the advantageous characteristics of Li-ion battery and supercapacitor, high energy density and high power density, respectively, and investigated its discharging characteristics over a wide temperature range from -40 to $25^{\circ}C$. At the initial state of discharging of the hybrid cell, the power was mostly provided by the supercapacitor and then the portion of the Li-ion battery was gradually increased. By installing a switching system into the hybrid cell, which controls the discharging sequence of Li-ion battery and supercapacitor, the maximum power was improved by 40% compared with non switching system. In addition at low temperatures, the power and discharging time of the hybrid cell were significantly enhanced compared to a battery-alone system. The hybrid cell is expected to be applied in electric vehicles and small domestic appliances that require high power at initial discharging state.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.