• 제목/요약/키워드: low oxygen pressure

검색결과 433건 처리시간 0.029초

저압 침탄에 의한 Ti-6Al-4V 합금의 표면 특성 개선 (Improvement of Surface Properties of Ti-6A1-4V Alloy by Low Pressure Carburizing)

  • 김지훈;박종덕;김성완
    • 열처리공학회지
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    • 제16권4호
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    • pp.191-196
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    • 2003
  • For improvement of the wear performance of Ti alloy, vacuum-carburizing technique was tried for the first time using propane atmosphere. During the low pressure carburizing carbide was formed at the surface and carbon transfer was occurred from the carbide to the matrix. It was found that: (i) surface hardness increased with the reduction of operating pressure and time; (ii) optimum hardness distribution could be obtained with the proper choice of temperature and carbon flux control; and, (iii) case depth was largely influenced not by time but by temperature. The two steps process was recommended for obtaining thick case depth and high surface hardness of Ti alloy. For the low oxygen partial pressure, it was necessary to introduce additional CO gas to the atmosphere.Grain boundary oxidation and non-uniformity could be prevented.

The Effect of Etching on Low-stress Mechanical Properties of Polypropylene Fabrics under Helium/Oxygen Atmospheric Pressure Plasma

  • Hwang, Yoon J.;An, Jae Sang;McCord, Marian G.;Park, Shin Woong;Kang, Bok Choon
    • Fibers and Polymers
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    • 제4권4호
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    • pp.145-150
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    • 2003
  • Polypropylene nonwoven fabrics were exposed to He/$O_2$ atmospheric pressure glow discharge plasma. Surface chemical analysis and contact angle measurement revealed the surface oxidation by formation of new functional groups after plasma treatment. Weight loss (%) measurement and scanning electron microscopy analysis showed a significant plasma etching effect. It was investigated in low-stress mechanical properties of the fabrics using Kawabata Evaluation System (KES-FB). The surface morphology change by plasma treatment increased surface friction due to an enhancement of fiber-to-fiber friction, resulting in change of other low-stress mechanical properties of fabric.

무산소동 소재를 활용한 태양광 일렉트로드 바디 단조 부품 개발 (Development of Forging Parts for Solar Electrode Body Using Oxygen-Free Copper Material)

  • 박동환;탁윤학
    • 한국기계가공학회지
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    • 제15권3호
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    • pp.28-35
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    • 2016
  • Forging operations are non-stationary processes occurring because of indirect pressure, generally, under conditions of three-dimensional stress and deformation. Furthermore, due to friction and the constraints of die geometry, deformation is not homogeneous. Material flow and deformation are largely determined by the shape of the tools. It is well known that net-shape forging can improve the mechanical strength of the final product as well as reduce material waste. Oxygen-free copper that is used for electrical and electronic components has excellent electrical and thermal conductivity. Oxygen-free copper parts have a low productivity in cutting process. Thus, the forging process is performed in order to improve the low productivity in cutting process. The forging of oxygen-free copper for electrode body parts was modeled using finite element simulation and forging experiments that were conducted for producing electrode body parts at room temperature. In order to reduce the cost of cutting products, the forging was performed in a closed cavity to obtain near-net or net-shape parts.

Analysis of Liquid Oxygen Feeding System for Pump-Fed Liquid Propulsion Rocket

  • Cho, Nam-Kyung;Kwon, Oh-Sung;Cho, In-Hyun;Kim, Young-Mog
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.211-215
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    • 2004
  • For design of cryogenic propellant feeding system, one of the main requirements is to meet temperature requirement for satisfying turbo-pump NPSH requirement. In this paper improved method of estimating the thermal stratification in liquid oxygen tank is presented to help design. In the case of liquid rocket using turbo-pump, the inner pressure of liquid oxygen tank is maintained low, so vaporization of liquid oxygen is generally occurred. In this paper, inner process of LOX tank is analyzed by two phase flow modeling. The vaporization rate and required helium mass is investigated.

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사각형 유도 결합 플라즈마 시스템의 수치 모델링 (Numerical Modeling of a Rectangular Type Inductively Coupled Plasma System)

  • 주정훈
    • 한국표면공학회지
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    • 제45권4호
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    • pp.174-180
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    • 2012
  • Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

Effect of pre-annealing conditions on critical current density of Bi-2223 tapes

  • Ha, Dong-Woo;Yang, Joo-Saeng;Ha, Hong-Soo;Oh, Sang-Soo;Lee, Dong-Hoon;Hwang, Sun-Yuk;Park, Jung-Gyu;Kwon, Young-Kil
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.31-34
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    • 2003
  • Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

산소 분압 조절에 따른 ITO/PVDF 박막 물성 조절 연구 (Physical Properties of ITO/PVDF as a function of Oxygen Partial Pressure)

  • 이상엽;김지환;박동희;변동진;최원국
    • 한국전기전자재료학회논문지
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    • 제21권10호
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    • pp.923-929
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    • 2008
  • On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

Microelectromechnical system 소자를 위한 박막형 2차전지용 $SnO_2$ 음극박막의 충방전 특성 평가 (Charge/Discharge Characteristics of $SnO_2$ thin film as an anode of thin film secondary battery for microelectromechanical system device)

  • 남상철;조원일;전은정;신영화;윤영수
    • 한국진공학회지
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    • 제9권1호
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    • pp.36-41
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    • 2000
  • $SnO-2$ thin films for thin film secondary battery anode were deposited n glass substrate with stain-less steel collector and charge/discharge experiments were conducted to investigate feasibility of $SnO-2$ thin film as a new anode material. The as-deposited films were pure $SnO-2$ phase which is not related to deposition condition. The grain size on the surface of as-deposited films increased with increase of oxygen partial pressure. However, the grain size did not show any change above oxygen partial pressure of 80:20. The surface roughness of the as-deposited films increased after decreasing because of resputtering effect of oxygen negative ion in plasma. All films showed typical $SnO-2$ anode characteristics which has a side effect at the first cycle, which is not related to the deposition condition. The charge/discharge experiments of 200cycles indicated that capacity of $SnO-2$ films depended on oxygen contents and surface roughness. The cycle characteristics was determined by initial charge/discharge reaction. The $SnO-2$ film with low initial capacity showed more stable cycle characteristics than film with high initial capacity.

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ZnO 박막의 전기적 구조적 특성에 미치는 수소 분압비의 영향 (Effect of Hydrogen Partial Pressure Ratio on Electrical and Structural Properties of ZnO Thin Film)

  • 이성훈;신민근;변응선;김도근;전상조;구본흔
    • 한국표면공학회지
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    • 제39권6호
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    • pp.250-254
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    • 2006
  • Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

Bi4Ti3O12 박막의 구조적 특성과 유전 특성에 미치는 산소 열처리 효과 (Effects of Oxygen Annealing on the Structural Properties and Dielectric Properties Of Bi4Ti3O12 Thin Films)

  • 차유정;성태근;남산;정영훈;이영진;백종후
    • 한국전기전자재료학회논문지
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    • 제22권4호
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    • pp.290-296
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    • 2009
  • $Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.