• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• 한국표면공학회지
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• 제56권6호
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• pp.412-419
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• 2023

Anion exchange membrane electrolysis is considered a promising next-generation hydrogen production technology that can produce low-cost, clean hydrogen. However, anion exchange membrane electrolysis technology is in its early stages of development and requires intensive research on electrodes, which are a key component of the catalyst-system interface. In this study, we optimized the pressure conditions of the hot-pressing process to manufacture cobalt oxide electrodes for the development of a high uniformity and high adhesion electrode production process for the oxygen evolution reaction. As the pressure increased, the reduction of pores within the electrode and increased densification of catalytic particles led to the formation of a uniform electrode surface. The cobalt oxide electrode optimized for pressure conditions exhibited improved catalytic activity and durability. The optimized electrode was used as the anode in an AEMWE single cell, exhibiting a current density of 1.53 A cm^-2 at a cell voltage of 1.85 V. In a durability test conducted for 100 h at a constant current density of 500 mA cm^-2, it demonstrated excellent durability with a low degradation rate of 15.9 mV kh^-1, maintaining 99% of its initial performance.

• 전자공학회논문지A
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• 제32A권3호
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• Journal of Dental Anesthesia and Pain Medicine
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• 제19권3호
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• pp.151-158
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• 2019

Background: This study aimed to examine whether the combination of low-dose ketamine and propofol in deep sedation is clinically useful in controlling the behavior in intellectually disabled patients who are typically extremely noncooperative during dental procedures. Methods: A total of 107 extremely noncooperative intellectually disabled adult patients were analyzed. In all patients, deep sedation was performed using either propofol alone (group P) or using a combination of propofol and 0.2 mg/kg or 0.4 mg/kg ketamine (groups PK0.2 and PK0.4, respectively). The procedures were performed in the order of insertion of nasal cannula into the nostril, attachment of mouth gag, and mouth cleaning and scaling. The frequency of patient movement during the procedures, mean arterial pressure, heart rate, peripheral oxygen saturation, recovery time, discharge time, and postoperative nausea and vomiting were examined. Results: The three groups were significantly different only in the frequency of patient movement upon stimulation during single intravenous injection of propofol and scaling. Conclusion: For propofol deep sedation, in contrast to intravenous injection of propofol alone, prior intravenous injection of low-dose ketamine (0.4 mg/kg) is clinically useful because it neither affects recovery, nor causes side effects and can suppress patient movement and vascular pain during procedures.

• 한국가스학회지
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• 제18권2호
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• pp.21-27
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• 2014

MILD 연소는 고온의 배기가스를 연소로 내에 재유입 되는 양에 따라 질소산화물 저감 특성에 많은 영향을 받는다. 본 연구에서는 MILD 연소로에서 고온의 배기가스를 연소로 내에 재순환하기 위해 코안다 노즐을 사용하였는데. 코안다 노즐의 중심에 중심 축소관을 설치한 경우와 설치하지 않은 경우에 고압공기 유량, 배기가스 유입량 특성을 수치해석을 통해 살펴봄으로써 최적의 코안다 노즐 형상을 도출하는 것을 연구의 목적으로 하였다. 본 연구의 전산 해석의 결과는 혼합가스 출구의 압력이 대기압일 때는 중심축소관이 없을 때가 배기가스 유입량이 약 18% 크게 나타나고 혼합가스 출구 압력이 증가하면 중심축소관이 있을 때가 유입량이 더 큼일 알 수 있었다. 이에 대한 분석은 노즐 목에서의 압력, 유입가스 입구와 혼합가스 출구 압력 그리고 유동 단면적으로 구성한 유입 구동력으로 해석 가능하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.9-10
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• 2002

Human circulatory system between heart and tissue is not directly connected in normal condition but mandatory to go through the capillary system in order to fulfill its physiologic aim to deliver oxygen and nutrients, etc. to the tissue and retrieve used blood together with waste products from the tissue properly. When abnormal connection between arterial and venous system (AV fistula), these two circulatory systems respond differently to the hemodynamic impact of this abnormal connection between high pressure (artery) and low pressure (vein) system. Depending upon the location and/or degree (e.g. size and flow) of fistulous condition, each circulatory system exerts different compensatory hemodynamic response to this newly developed abnormal inter-relationship between two systems in order to minimize its hemodynamic impact to own system of different hemodynamic characteristics. Pump action of the heart can assist the failing arterial system directly to maintain arterial circulation against newly established low peripheral resistance by the AV fistula during the compensation period, while it affects venous system in negative way with increased venous loading. However, the negative impact of increased heart action to the venous system is partly compensated by the lymphatic system which is the third circulatory system to assist venous system independently with different hemodynamics. The lymphatic system with own unique Iymphodynamics based on peristaltic circulation from low resistance to high resistance condition, also increases its circulation to assist the compensation of overloaded venous system. Once these compensation mechanisms should fail to fight to newly established hemodynamic condition due to this abnormal AV connection, each system start to show different physiologic ${\underline{de}compensation}$ including heart and lymphatic system. The vicious cycle of decompensation between arterial and vein, two circulatory system affecting each other by mutually negative way steadily progresses to show series of hemodynamic change throughout entire circulation system altogether including heart. Clinical outcome of AV fistula from the compensated status to decompensated status is closely affected by various biological and mechanical factors to make the hemodynmic status more complicated. Proper understanding of these crucial biomechanical factors iii particular on hemodyanmic point of view is mandatory for the advanced assessment of biomechanical impact of AV fistula, since this new advanced concept of AY fistula based on blomechanical information will be able to improve clinical control of the complicated AV fistula, either congenital or acquired.

• Neonatal Medicine
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• 제18권2호
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• pp.320-327
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• 2011

목적: 조산아는 산화 방지 시스템이 미성숙하여 과산소증 및 저산소증에 노출되면 이차적으로 중추 신경계, 호흡계, 혈액계 등 다른 체내 기관에 손상이 올 수 있다. 저자들은 1,500 g 미만 또는 32주 미만의 조산아에서 동맥혈 산소 분압을 50-70mmHg근처로 유지하기 위하여 경피적 산소 포화도를 90-94%로 유지하여 과산소증 및 저산소증을 회피하는 전략 하에 치료하였던 군(T)과 고식적인 경피적 산소 포화도 감시를 하였던 군(C)에서 사망률, 입원 기간 및 이환율에 대해 비교하였다. 방법: 충남대학교병원 신생아 집중치료실에 입원하였던 신생아 중 1,500 g 미만 또는 32주 미만의 조산아를 대상으로 하였다. 2008년 8월부터 2010년 7월까지 경피적 산소포화도를 90-94%으로 유지하였던 조산아들을 T군으로 하였고 2007년 1월에서 2008년 8월까지 경피적 산소 포화도 감시의 지침 없이 고식적인 관리를 하였던 조산아들을 C군으로 하였다. 양 군 간에 입원 중 사망률, 입원기간, 만성폐질환으로 이행 및 치료 여부, 괴사성 장염, 미숙아 망막증, 뇌실 내 출혈, 동맥관 개존증 등을 후향적으로 비교하였다. 결과: 양 군의 기본 특징은 성별 외에 유의한 차이가 없었다. 사망률은 T군에서 C 군 보다 적은 경향은 보였으나 통계적 유의성은 없었다(5.3% vs. 16.7%, P=0.127). 두 군간에 입원기간, 만성폐질환, 산소 사용 기간과 괴사성 장염의 빈도는 차이가 없었다. ICROP 제 3기 이상의 중증 미숙아 망막증은 T군이 C군 보다 적은 경향을 보였으며(2.6% vs. 10%, P=0.203), 뇌실 내 출혈의 발생 빈도는 T군에서 C군 보다 낮은 경향을 보였다(18.4% vs. 40.0%, P=0.051). 치료가 필요하였던 동맥관 개존증의 빈도는 양 군에서 차이가 없었다. 결론: 극소 저체중 출생아 또는 극소 조산아에서 경피적 산소포화도를 90-94%으로 유지하는 전략은 과산소증 및 잠재적인 저산소증에의 노출을 최소화함으로서 합병증의 증가 없이 단기적 예후 개선에 기여할 수 있을 것이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.979-982
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• 2004

The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.