• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.135-138
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• 2002

VCO(Voltage Controlled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, VCO need to have much smaller size with better characteristics. Buried type passive components of L,C,R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and fabrication of VCO circuit, and surface mounted components like varactor diode are analysed using the measurement circuit designed by ourselves. Two-Dimensional simulation of VCO circuit and local three-Dimensional structure simulation are performed and their relation is obtained. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscillator for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3∼2.36 GHz band is developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.322-322
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• 2008

Low-temperature co-fired ceramics (LTCC) have turned out to be very promising technology in accordance with the rapid developments in semiconductor technology. The demands for compact electrical assemblies, smaller power loss as well as high signal density can be fulfilled by LTCC. And for the multi-layered ceramic devices with embedded passive components such as high dielectric constant decoupling capacitor, LTCC materials require the several conditions to avoid delamination and internal cracks. For the present study, diopside-based glass is chosen as the LTCC substrate material in view of its high coefficient of thermal expansion (CTE). From the experimental resultsn the influence of each element on the CTE change can be revealed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.330-330
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• 2010

이동통신 시스템의 소형화, 경량화, 다기능화 추세에 따라 이동통신 부품도 단위 부피당 소자의 집적도를 증가시키기 위하여 고집적화 추세로 급진전되고 있다. 이에 따라 세라믹 공정 기술도 고집적 추세로 다층화 되고 있어 수동소자의 내장화에 대한 필요성이 증대되고 있다. 이를 위하여 다양한 유전율 대역의 이종소재간 접합을 시도하지만 de-lamination, 내부 crack 등의 결함들이 발생하므로 열팽창계수 조절이 용이한 동종의 글라스를 사용하는 것이 유용하다. 본 연구에서는 공통의 글라스를 개발한 후 다양한 필러들을 혼합하여 mm파 대역에서 다양한 유전율을 갖는 LTCC 소재를 개발함으로써, 수동소자의 내장화에 따른 이종접합시의 매칭성을 극대화하고자 하였다. 이를 위하여 CaO-$Al_2O_3-SiO_2-B_2O_3$계 공통글라스에 $CaZrO_3$, $1.3MgTiO_3$, $2La_2O_3TiO_2$ 필러를 혼합하여 소결체의 미세구조, 유전특성 및 열기계적 특성을 고찰하였다. 이때 유전율 6에서 20에 이르는 저손실 소재를 개발할 수 있었다.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.61-64
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• 2001

VCO(Voltage Contolled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, YCO need to hove much smaller size with better characteristics. Buried type passive components of L, C, R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and measurement circuit designed by ourselve. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscilltor for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3~2.36 GHz band is developed.