• Title/Summary/Keyword: low leakage

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Soft Switching DC-DC Converter for AC Module Type PV Module Integrated Converter (AC 모듈형 태양광 모듈 집적형 컨버터를 위한 소프트 스위칭 DC-DC 컨버터)

  • Youn, Sun-Jae;Kim, Young-Ho;Jung, Yong-Chae;Won, Chung-Yuen
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.3
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    • pp.247-255
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    • 2013
  • In this paper, a soft switching DC-DC converter for AC module type photovoltaic (PV) module integrated converter is proposed. A push-pull converter is suitable for a low voltage PV AC module system because the step-up ratio of a high frequency transformer is high and the number of primary side switches is relatively small. However, the conventional push-pull converters do not have high efficiency because of high switching losses by hard switching and transformer losses (copper and iron losses) by high turns-ratio of the transformer. In the proposed converter, primary side switches are turned on at zero voltage switching (ZCS) condition and turned off at zero current switching (ZVS) condition through parallel resonance between secondary leakage inductance of the transformer and a resonant capacitor. Therefore the proposed push-pull converter decreases the switching loss using soft switching of the primary switches. Also, the turns-ratio of the transformer can be reduced by half using a voltage-doubler of secondary side. The theoretical analysis of the proposed converter is verified by simulation and experimental results.

Research Trends of Spray and Combustion Characteristics Using a Gelled Propellant (젤 추진제의 분무 및 연소특성 연구동향)

  • Hwang, Tae-Jin;Lee, In-Chul;Koo, Ja-Ye
    • Journal of the Korean Society of Propulsion Engineers
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    • v.15 no.5
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    • pp.96-106
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    • 2011
  • There are many advantages in applying gel propellant to a gel propulsion system. These include higher performances, the energy management of liquid propulsion system, reliable storability and low leakage characteristics. Additionally, gel propulsion system are preferable to the high density impulse of propulsion system. Also, when compared to liquid propellants, the gel propellants acquire greater heat energy. Gel propellants achieve a high specific impulse when metal particles with aluminum and boron are added. With respect to atomization, an inactive process occurs due to the variable viscosity of the metal particles and gelling agents. To improve the defect of atomization and combustion characteristics of gel propellant, a variety of issues related to spray and combustion is introduced here.

Dielectric $Bi_3NbO_7$ thin film grown on flexible substrates by Nano Cluster Deposition

  • Lee, Hyun-Woo;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.10-10
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    • 2009
  • Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

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Fabrication of Flexible Solid-state Dye-sensitized $TiO_2$ Nanotube Solar Cell Using UV-curable NOA

  • Park, Ik-Jae;Park, Sang-Baek;Kim, Ju-Seong;Jin, Gyeong-Seok;Hong, Guk-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.396-396
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    • 2012
  • $TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

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Transformer-Reuse Reconfigurable Synchronous Boost Converter with 20 mV MPPT-Input, 88% Efficiency, and 37 mW Maximum Output Power

  • Im, Jong-Pil;Moon, Seung-Eon;Lyuh, Chun-Gi
    • ETRI Journal
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    • v.38 no.4
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    • pp.654-664
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    • 2016
  • This paper presents a transformer-based reconfigurable synchronous boost converter. The lowest maximum power point tracking (MPPT)-input voltage and peak efficiency of the proposed boost converter, 20 mV and 88%, respectively, were achieved using a reconfigurable synchronous structure, static power loss minimization design, and efficiency boost mode change (EBMC) method. The proposed reconfigurable synchronous structure for high efficiency enables both a transformer-based self-startup mode (TSM) and an inductor-based MPPT mode (IMM) with a power PMOS switch instead of a diode. In addition, a static power loss minimization design, which was developed to reduce the leakage current of the native switch and quiescent current of the control blocks, enables a low input operation voltage. Furthermore, the proposed EBMC method is able to change the TSM into IMM with no additional time or energy loss. A prototype chip was implemented using a $0.18-{\mu}m$ CMOS process, and operates within an input voltage range of 9 mV to 1 V, and an output voltage range of 1 V to 3.3 V, and provides a maximum output power of 37 mW.

Blood Vessel Enhancement by Directed Diffusion

  • Intajag, S.;Tipsuwanporn, V.
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.101-106
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    • 2004
  • In this paper, a blood vessel in an angiographic image, which plays an importance role in the diagnose diseases including in the eyes, brain and heart, is enhanced by using a directed diffusion technique. A fundamental component of the angiographic analysis is vessel segmentation that the proposed method provides a preprocessing of the image into a form suitable for human analysis, or more importantly, for machine analysis such the segmentation. Vessel enhancement is a challenging problem due to the complex nature of vascular trees and to imaging imperfections. Some parts of the inherent imperfections in angiography are the intensity inhomogeneity between the larger and smaller vessels, and another imperfection is the leakage of contrast agent into the background tissue that provides to low contrast between vessels and tissue. In the proposed scheme, the directed diffusion solves the problem by formulating a local geometric structure, which consists of direction and scale of the blood vessels. The diffusion process uses the local structure to enhance by a diffusivity tensor. The proposed algorithm can be applied to maintain sharpness and coherence-smooth the intra-regions into homogeneity better than traditional diffusion methods, which are Gaussian regulation and coherence enhancing diffusion.

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Formation of ultra-thin $Ta_{2}O_{5}$ film on thermal silicon nitrides (열적 성장된 실리콘 질화막위에 산화 탄탈륨 초박막의 형성)

  • 이재성;류창명;강신원;이정희;이용현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.11
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    • pp.35-43
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    • 1995
  • To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

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Modeling for UV Photo-detector with Pt/AIGaN Schottky diode (Pt/AIGaN 쇼트키 다이오드의 수광특성 모델링)

  • Kim Jong-Hwan;Lee Heon-Bok;Park Sung-Jong;Lee Jung-Hee;Hahm Sung-Ho
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.605-608
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    • 2004
  • A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

  • Kwak, Ho-Young;Kwon, Sung-Kyu;Kwon, Hyuk-Min;Sung, Seung-Yong;Lim, Su;Kim, Choul-Young;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.543-548
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    • 2014
  • In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

A pairing-free key-insulated certificate-based signature scheme with provable security

  • Xiong, Hu;Wu, Shikun;Geng, Ji;Ahene, Emmanuel;Wu, Songyang;Qin, Zhiguang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.9 no.3
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    • pp.1246-1259
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    • 2015
  • Certificate-based signature (CBS) combines the advantages of both public key-based signature and identity-based signature, while saving from the disadvantages of drawbacks in both PKS and IBS. The insecure deployment of CBS under the hostile circumstances usually causes the exposure of signing key to be inescapable. To resist the threat of key leakage, we present a pairing-free key insulated CBS scheme by incorporating the idea of key insulated mechanism and CBS. Our scheme eliminates the costly pairing operations and as a matter of fact outperforms the existing key insulated CBS schemes. It is more suitable for low-power devices. Furthermore, the unforgeability of our scheme has been formally proven to rest on the discrete logarithm assumption in the random oracle model.