• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.390-393
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• 2001

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. The glass coatings on the stainless steel substrates ranged from $100{\mu}m$ to $150{\mu}m$ thick. The adhesion of the glass coatings was found to be excellent such that it was able to withstand moderate impact tests and temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and higher applied voltages when deviations were observed to occur. The deviation is due to increased leakage current at higher temperature and applied voltage as the electrical resistivity drops.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.2
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• pp.121-128
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• 2012

In this paper, a new planar transformer with a novel core configuration that can regulate the leakage inductance is proposed and described in detail. In order to design the slim size power system for flat panel TV, Two planar transformers applied to LLC resonant converter are connected in series at primary and in parallel by the center-tap winding at secondary. In this paper, a 300W low profile LLC resonant converter was built and tested to verify the proposed planar transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.145-146
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• 2005

This study performs a simulation for an accumulation mechanism of contaminants, which were produced in an industrial belt of inland, on the surface of insulators. From the simulation, silicon insulators presented higher accumulation than that of EPDM(Ethylene Propylene Diene Terpolymer : EPDM) insulators on the same distance in the case of the Virgin polymer insulator, and this result presented the same result in the insulator applied in actual fields. In the case of the accumulation test for the Virgin insulator and insulators used in actual fields, it is evident that the Virgin insulator presented more accumulation than that of the insulator used in actual fields. The results can be caused by the generation of LMW (Low Molecular Weight) on the external material of polymer insulators, and the level of the accumulation can be changed according to the degree of the continuous generation of LMW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.502-507
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• 2004

The forward planar transformer, which had power capacity of 300 W, input voltage of 220 V, output voltage of 15 V, and switching frequency of 300 KHz, was designed and manufactured by using the planar core with large effective area and the flat copper leadframes for miniaturization and high efficiency of the switching mode power supply (SMPS). As well as, a forward converter equipped with the above mentioned planar transformer was manufactured and electromagnetic characteristics were investigated. The numerical value of turns for 1st and 2nd winding were 15 and 2 respectively The self inductance of 1st winding was 1.592 mH, very low leakage inductance of 2.7 $\mu$H, and the coupling factor of 0.928 were obtained at switching frequency of 300 KHz. The high efficiency of 88.62 % for the SMPS equipped with planar transformer was obtained at power capacity of 300 W.

• The Korean Journal of Food And Nutrition
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• v.13 no.2
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• pp.139-145
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• 2000

To separate anticaries and antiinflammation from Aloe vera peel, we investigated a inhibited effect of Streptococcus mutans JC-2 that was antibiosis, glucosyltransferase activity about aloe-emodin and barbaloin. Aloe-emodin and barbaloin had strong antibiosis activity against Streptococcus mutans JC-2, they were especially antibiosis effect to low growth and prolong lag phase at attachment concentration 100$\mu\textrm{g}$/mL. The reduction rate of a culture fluid became to lessen than the comparison group for aloe-emodin and barbaloin. The intracellular materials of Streptococcus mutans JC-2 were to leakage as much as attachment concentration addition of aloe-emodin and barbaloin but there was no significant difference membrane demage between two active substances. The activity of GTase was inhibited by aloe-emodin and barbaloin and their inhibition rate was respectively 99.8%, 98.4% at the attachment concentration 100$\mu\textrm{g}$/mL.

• Restorative Dentistry and Endodontics
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• v.8 no.1
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• pp.155-159
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• 1982

The author has studied comparatively the sealing quality of conventional Z.O.E. cement, chloropercha and FR cement by means of penetration of 2% methylene blue solution through the apex of human teeth in 112 cases as the time elapsed. The results were as follows; 1. All the specimen, of which dye immersion time is three days, showed dye penetration of low degree unrelated to the kinds of root canal cement and the degree of dye penetration was increased as the time elapsed. 2. Of all the experimental group, the Z.O.E. cement group showed the lowest degree of dye penetration and the FR filling group showed the highest degree of dye penetration. 3. The degree of dye penetration of FR cement group was higher than that of the Z.O.E. cement group but lower than that of the chloropercha group.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.8
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• pp.423-429
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• 2006

Recently, the high frequency isolated boost DC/DC converter has been widely used for the PCS (Power Conditioning System) system because of its small size and low cost. However, the high frequency isolated boost DC/DC converters applied the conventional voltage-fed converter and current-fed converter have the problems such as the high conduction losses and the surge voltage due to the high circulating current and the leakage inductance, respectively. To overcome this problems, in this paper the secondary LLC resonant converter is proposed, and the experimental results of the secondary LLC series resonant converter for boost DC/DC converter are verified on the simulation based on the theoretical analysis and the 700W experimental prototype.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.729-735
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• 1991

To form shallow $p^+$ -n junctions, Ge and As ions were employed for preamorphization, and B or BF2 was implanted for doping. Same B and BF$_2$ implantations were performed into single crystalline silicon to compare the material and electrical characteristics with the preamorphized samples. SIMS measurements for 10KeV B implanted samples revealed the somilar boron distribution for two preamophized cases, but the ASR profiles indicated that the shallower junctions could be formed by Ge preamorphzation. Sheet resostance of Ge preamorphized sample was lower than the As preamorphized sample, and the diode leakage current characteristics were similar for the preamorphized and non-preamorphized samples. Among the samples implanted with BF ions into the substrates preamorphized with 25keV Ge or As ions, high sheet resistance and leaky diode characteristics were observed for the As preamorphized samples. It was found that Ge preamorphization is more useful than As preamorphization for the purpose of forming shallow $p^+$ -n junctions using low energy BF$_2$ implantation.