• 센서학회지
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• 제23권4호
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• pp.266-271
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• 2014

Chemical sensors are used in various industrial facilities such high-risk and prevent the leakage of substances, important in life and environmental protection and the safe use of industry, used for management. In particular, high-temperature environments such as power generation equipment of the rotating part due to leakage generated by the various oil, power plants Shut Down, fire, work environment (exposure to various chemical solution and gas leak) and various water, air and soil pollution causes. Thus, over the long term through various channels such as crops and groundwater contamination caused by the slow, serious adverse effect on the ecosystem. In this paper, synthetic lube oil and high pressure hydraulic fluid leakage and immediately detect a new Printed Electronic implementation of technology-based film-type sensors, and its performance test. Thus, industrial accidents and environmental pollution and for early detection of problems, large accidents can be prevented. Experimental results of the synthetic lube oil and high pressure hydraulic fluid solution after the contact time depending on the experiment and the oil solution of the sensor material of the conductive porous PE resistance value by a chemical reaction could be confirmed that rapid increase. Also implemented in the film-type oil sensor electrical resistance change over time of the reaction rate and the synthetic lube oil is about 2 minutes or less, the high pressure hydraulic fluid is less than about 1 minute was. Therefore, more high-pressure hydraulic fluid such as a low volatility synthetic lube oils are the resistance change and the reaction rate was confirmed to be the slowest.

• 한국화재소방학회논문지
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• 제30권2호
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• pp.43-48
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• 2016

가스계소화설비는 소화약제의 자연 누기와 소화설비 노후로 인한 누기 등으로 화재진압 능력이 저하되는 문제점이 발생하고 있다. 이에 본 연구에서는 소화약제의 누기를 실시간으로 감지하는 압력누기 체크센서 모듈을 개발하였으며, 개발 모듈에 대한 성능평가를 하였다. 국내 외적으로 압력누기 감시 시스템에 대한 명확한 시험기준이 마련되어 있지 않다. 따라서 국외 유사 기준 ISO 7240, FM 1421와 국내 수신기 형식승인 및 제품검사의 기술기준을 참고하여 개발 모듈에 맞게 기본 성능과 내환경성에 대한 기준을 마련하고 평가를 실행하였다. 기본 성능 평가는 압축공기를 모듈에 인가하는 방식으로 최저작동 압력이 0.3 bar인 것을 확인하였다. 내환경성 검증은 통상적으로 발생할 수 있는 기후변화에도 오작동 없이 정상적으로 작동하는지를 확인하였다. 그 결과, 고온($50^{\circ}C$) 및 저온($-10^{\circ}C$) 환경 기준에서 이상 없이 정상 작동하였다.

• 조명전기설비학회논문지
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• 제21권1호
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• pp.118-124
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• 2007

본 논문에서는 임펄스전류의 크기와 인가횟수가 ZnO바리스터의 수명에 미치는 영향에 관한 것으로 뇌임펄스전류가 ZnO바리스터의 성능에 미치는 영향을 분석하기 위하여 $8/20[{\mu}s]$임펄스전류가 인가되기 전후 ZnO바리스터의 상용주파수 교류전압에 대한 저항성 누설전류와 손실전력을 측정하였다. 그 결과 $8/20[{\mu}s]$임펄스전류의 인가횟수가 증가함에 파라 ZnO바리스터에 흐르는 저항성 누설전류는 증가하고 통과시간은 길어졌다. ZnO바리스터의 수명은 뇌임펄스전류의 크기와 인가횟수에 대해서 평가하는 것이 바람직하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• 한국재료학회지
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• 제20권7호
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• pp.374-378
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• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권4호
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• pp.2276-2291
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• 2017

Data protection of removable storage devices is an important issue in information security. Unfortunately, most existing data protection mechanisms are aimed at protecting computer platform which is not suitable for ultra-low-power devices. To protect the flash disk appropriately and efficiently, we propose a trust based USB flash disk, named UTrustDisk. The data protection technologies in UTrustDisk include data authentication protocol, data confidentiality protection and data leakage prevention. Usually, the data integrity protection scheme is the bottleneck in the whole system and we accelerate it by WH universal hash function and speculative caching. The speculative caching will cache the potential hot chunks for reducing the memory bandwidth pollution. We adopt the symmetric encryption algorithm to protect data confidentiality. Before mounting the UTrustDisk, we will run a trusted virtual domain based lightweight virtual machine for preventing information leakage. Besides, we prove formally that UTrustDisk can prevent sensitive data from leaking out. Experimental results show that our scheme's average writing throughput is 44.8% higher than that of NH scheme, and 316% higher than that of SHA-1 scheme. And the success rate of speculative caching mechanism is up to 94.5% since the access pattern is usually sequential.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.163-166
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• 2004

모바일향 90nm DRAM을 개발하기 위하여 비대칭 채널 구조를 갖는 Recess Channel Array Transistor (RCAT)로 cell transistor를 구현하였다. DRAM cell transistor에서 junction leakage current 증가는 DRAM retention time 열화에 심각한 영향을 미치는 요인으로 알려져 있으며, DRAM의 minimum feature size가 점점 감소함에 따라 short channel effect의 영향으로 junction leakage current는 더욱 더 증가하게 된다. 본 실험에서는 short channel effect의 영향에 의한 junction leakage current를 감소시키기 위하여 Recess Channel Array Transistor를 도입하였고, cell transistor의 채널 영역을 비대칭으로 형성하여 data retention time을 증가시켰다. 비대칭 채널 구조을 이용하여 Recess Channel Array Transistor를 구현한 결과, sub-threshold 특성과 문턱전압, Body effect, 그리고, GIDL 특성에는 큰 유의차가 보이지 않았고, I-V특성인 드레인 포화전류(IDS)는 대칭 채널 구조인 transistor 대비 24.8% 정도 증가하였다. 그리고, data retention time은 2배 정도 증가하였다. 본 실험에서 얻은 결과는 향후 저전압 DRAM 개발과 응용에 상당한 기여를 할 것으로 기대된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.456-459
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• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.190-195
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• 2000

The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.