• 제목/요약/키워드: low leakage

검색결과 1,336건 처리시간 0.034초

인버터로 구동되는 단상 유도전동기의 출력 누설전류 억제 대책에 관한 연구 (A Study on the Rejection of A Output Leakage Current of Single Phase Induction Motor Driven a Inverter)

  • 박찬근;박정환;최승현;이성근
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2000년도 추계종합학술대회
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    • pp.553-557
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    • 2000
  • 본 논문은 PWM 인버터로 구동되는 단상 유도전동기의 출력 누설 전류 억제에 관한 방법을 제안한다. 제안된 방법은 누설 전류 피드백 회로가 부가된 인버터 시스템에 있어서 저차 고조파 저감을 위한 새로운 PWM 스위칭 알고리즘을 적용한 것이다. 제안된 방법의 타당성을 검증하기 위해 컴퓨터 시뮬레이션을 수행한다.

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Oxide-Nitride-Oxide막을 게이트 절연막으로 사용하여 제조한 다결정실리콘 박막트랜지스티의 특성 (Properties of Poly-Si TFT's using Oxide-Nitride-Oxide Films as Gate Insulators)

  • 이인찬;마대영
    • 한국전기전자재료학회논문지
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    • 제16권12호
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    • pp.1065-1070
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    • 2003
  • HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

A Low-Power Register File with Dual-Vt Dynamic Bit-Lines driven by CMOS Bootstrapped Circuit

  • Lee, Hyoung-Wook;Lee, Hyun-Joong;Woo, Jong-Kwan;Shin, Woo-Yeol;Kim, Su-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권3호
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    • pp.148-152
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    • 2009
  • Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

Analysis of leakage factors affecting ECV performance in variable compressor

  • Mahmud, Md. Iqbal;Cho, Haeng Muk
    • 에너지공학
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    • 제23권4호
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    • pp.183-188
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    • 2014
  • Solenoid operated electromagnetic control valve (ECV) using in an external variable displacement swash plate type compressor is widely used for air conditioning control system because of its low energy consumption and high efficient characteristics. ECV controls the entire vehicle air conditioning system by means of a pulse width modulation (PWM) system that supplied from an external controller. Different pressure ports located within ECV has important functions to control the air/refrigerant flow through its internal passages. The flow paths are preciously maintained with acceptable ranges of leakage (gap) between the parts inside it which is followed by effective design and critical dimensioning of its internal features. Therefore, it saves energy losses from the solenoid operation as well as ensures the balance of forces within it. The research paper highlights analysis of the leakages (at different pressure ports) and dimensioning tolerance factors that affects the ECV performance.

RTMOCVD법에 의해 제조된 Ta2O5 박막의 특성 (Characteristics of Ta2O5 thin film prepared by RTMOCVD)

  • 소명기
    • 산업기술연구
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    • 제19권
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    • pp.101-105
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    • 1999
  • Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

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컴퓨터를 이용한 피뢰기 누설전류 분석장치 개발 (Development of arrester leakage current detector using computer)

  • 이영길;오정환;김재철;한민구;오계환;이복규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 B
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    • pp.631-633
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    • 1995
  • In this paper, the results of development of arrester leakage current detector using micro computer are described. This detector is based on harmonic analysis of the leakage current by FFT. For low sensitivity to disturbance, this device used optical fiber. This will be a great benefit of detecting deterioration ZnO arrester.

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애자/피뢰기 모니터링을 위한 유비쿼터스 센서 개발 (Development of a Ubiquitous Sensor for Monitoring Insulators and Arresters)

  • 길경석;신광철;박종국;심재원;송재용
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2006년도 추계학술대회 논문집
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    • pp.736-741
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    • 2006
  • In this study, a ubiquitous sensor for condition monitoring of insulators and lightning arresters installed in power distribution lines and electric traction vehicles is presented. The sensor consists of two parts; a leakage current measurement and a lightning surge detection. Measured data are transmitted to a supervisory computer through ZigBee protocol based on IEEE 802.15.4. To detect leakage current, a window type Mn-ZCT is used and a low-noise amplifier with a gain of 60dB is designed, and this can measure leakage current in ranges of $100{\mu}A{\sim}5mA$. A sample-hold(S/H) and a Rogowski coil are injected to analyze the magnitude of surge current in ranges from 500A to 10kA with $8/20{\mu}s$-waveform.

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분석 조건에 따른 p-MOSFET의 게이트에 유기된 드레인 누설전류의 열화 (Degradation of Gate Induced Drain Leakage(GIDL) Current of p-MOSFET along to Analysis Condition)

  • 배지철;이용재
    • E2M - 전기 전자와 첨단 소재
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    • 제10권1호
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    • pp.26-32
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    • 1997
  • The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

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Transparent Sol-Gel Hybrid Dielectric Material Coatings for Low k Passivation Layer

  • Yang, Seung-Cheol;Oh, Ji-Hoon;Kwak, Seung-Yeon;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1453-1456
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    • 2009
  • Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

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개수로형 재생펌프의 성능특성에 관한 실험적 및 수치해석적 연구 (Experimental and Numerical Study on the Performance Characteristics of an Open Channel Type Regenerative Pump)

  • 신동윤;최창호;홍순삼;김진한
    • 한국유체기계학회 논문집
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    • 제11권5호
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    • pp.7-14
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    • 2008
  • Open channel type regenerative pump has been used in various industrial fields. It generates high pressure with low flow rate. However, it has low efficiency because of its complex flow pattern, We studied performance experiments and 3D numerical flow analysis of a regenerative pump. Through the numerical analysis, we could get the internal flow pattern and profile of a regenerative pump. Also, we examined leakage flow effects due to the gap between casing and impeller and stripper clearance. For the numerical analysis verification, we performed experiments and they had similar tendency at the design point.