• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.74-76
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• 1995

In this paper, the results of development of arrester leakage current detector using micro computer are described. This detector is based on harmonic analysis of the leakage current by FFT. The change of leakage current is the recognized measure of deterioration. For low sensitivity to disturbance, this device used optical fiber. This will be a great benefit of detecting deterioration ZnO arrester.

• Journal of the Korean Society of Combustion
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• v.22 no.4
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• pp.35-42
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• 2017

This case covers the issues related to the operation problem, cause analysis and improvement cases of the FGD that employed the non-leakage type GGH in coal-fired power plant for the first time in Korea. In the Cooler, there was a main problem that the tube is damaged by the ash cutting due to the high velocity of flue gas in the duct and by the weak wear resistance of material. In the Reheater, there was a main problem that the tube was corroded due to chlorine and sulfur in the circumstance of the low temperature. In order to solve those problems, we have improved the Reheater tube and tube fins by coating enamel to reduce corrosion rate.

• Journal of Chest Surgery
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• v.27 no.12
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• pp.1060-1065
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• 1994

For most surgeons, stomach and colon are the first choice for reconstruction of the esophagus, as well as for bypass. When the esophagogastric or esophagocolonic anastomosis is made in the neck, cervical anastomosis site leakage is the main complication. In our most recent four patients who underwent a transhiatal & posterior mediastinal esophagogastric or esophagocolonic anastomoses following esophageal resection, we performed the cervical anastomoses with a circular EEA stapler. No leaks have developed at the anastomosis site. In these four patients the cancer was tiny and was located on the upper or middle third of the thoracic esophagus. A total esophagectomy was performed by blunt resection without thoracotomy. Surgical staplers have been used previously for esophagogastric anastomosis through a right thoracotomy with a very low rate of leakage. When the esophagogastric or esophagocolonic anastomosis is performed in the neck, the prevalence of leakage does not increase the postoperative mortality, but it can increase significantly the duration of hospitalization and morbidity. The use of the circular stapler allowed us to perform four consecutive cervical esophagogastric & esophagocolonic anastomoses without any leakage and to shorten the operating time.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2166-2168
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• 2005

This paper presents the frequency - dependent characteristics of leakage currents flowing through ZnO varistor. The leakage current - voltage (V-I) characteristic curves of the commercial ZnO varistor were measured. The resistive leakage current was increased with increasing the magnitude and frequency of the applied voltage in the low conduction region. The power losses of ZnO varistor increase as the frequency of applied voltage increases, because of the dielectric loss related to the frequency of the test voltage.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.202-212
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• 2008

A three-dimensional computation was conducted to understand effects of the low Reynolds number on the loss characteristics in a transonic axial compressor, Rotor67. As a gas turbine becomes smaller in size and it is operated at high altitude, the operating condition frequently lies at low Reynolds number. It is generally known that wall boundary layers are thickened and a large separation occurs on the blade surface in axial turbomachinery as the Reynolds number decreases. In this study, it was found that the large viscosity did not affect on the bow shock at the leading edge but significantly did on the location and the intensity of the passage shock. The passage shock moved upstream towards leading edge and its intensity decreased at the low Reynolds number. This change had large effects on the performance as well as the internal flows such as the pressure distribution on the blade surface, tip leakage flow and separation. The total pressure rise and the adiabatic efficiency decreased about 3% individually at the same normalized mass flow rate at the low Reynolds number. In order to analyze this performance drop caused by the low Reynolds number, the total pressure loss was scrutinized through major loss categories such as profile loss, tip leakage loss, endwall loss and shock loss.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.2
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• pp.57-64
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• 2007

This paper proposed the low power texture cache for mobile 3D graphics accelerators. It is very important to reduce the leakage power in the standby mode for mobile 3D graphics accelerators and the memory access latency of texture mapping in the active mode which needs a large memory bandwidth. The proposed structure reduces the leakage power using variable threshold values of power mode transitions according to the selected texture filtering algorithms of application programs, which has the run time gain for texture mapping. In the trace driven cache simulation the proposed structure shows the best 7% performance gain to the previous MSA cache according to the new performance metric considering both normalized leakage power and run time impact.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.490-496
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• 2005

The electrical properties and stability of the varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_{2}$O$_{3}$-Dy$_{2}$O$_{3}$ system were investigated with sintering time in the range of 1$\~$3 h at 1350$^{\circ}C$ . As the sintering time was increased, the varistor voltage and leakage current increased, but the nonlinear exponent decreased. The varistors sintered for 1 h exhibited excellent nonlinearity, with a nonlinear exponent of 55.3 and a leakage current of 0.1 $\mu$A, whereas presented relatively low stability. The varistors sintered for 2 h exhibited not only high nonlinear exponent of 46.3, low leakage current of 0.3 $\mu$A, low dielectric dissipation factor of 0.0431, but also the highest stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, dielectric constant, and dielectric dissipation factor were -3.0$\%$, -4.1$\%$, +3056.2$\%$, +5.1$\%$, and -12.5$\%$, respectively, after DC accelerated aging stress state of 0.95 V$_{1ma}$/150$^{\circ}C$/24 h. On the whole, the nonlinearity and stability of these varistors are greatly affected by the sintering time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.881-883
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• 2005

In case is below length 100nm of gate, various kinds problem can be happened with by threshold voltage change of device, occurrence of leakage current by tunneling because thickness of oxide by 1.5nm low scaling is done and doping concentration is increased. SiO$_2$ dielectric substance can not be used for gate insulator because is expected that tunneling current become 1A/cm$^2$ in 1.5nm thickness low. In this paper, devised double gate MOSFET(DGMOSFET) to decrease effect of leakage current by this tunneling. Therefore, could decrease effect of these leakage current in thickness 1nm low of SiO$_2$ dielectric substance. But, very big gate insulator of permittivity should be developed for develop device of nano scale.