• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.53-54
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• 2008

We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.129-134
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• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.164-164
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• 2008

금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 최근 Cu를 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결하고자, 본 논문에서는 Cu 표면에 Passivation layer를 형성 및 제거하는 개념으로 공정시 연마제를 사용하지 않으며, 낮은 압력조건에서 공정을 수행하기 위해, 전해질의 농도 변화에 따른 Liner sweep voltammetry 법을 사용하여 전압활성화에 의한 전기화학적 반응이 Cu전극에 어떤 영향을 미치는지 연구하였으며, 표면 조성을 알아보기 위하여 Energy Dispersive Spectroscopy (EDS) 분석을 하였고, Cu disk의 결정성과 배향성 관찰을 위해 X-Ray diffraction (XRD)로 금속 표면을 비교하여 실험 결과로 얻어진 데이터를 통하여 ECMP 공정에 적합한 전해액 선정과 농도를 선택하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.89.2-89.2
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• 2011

Stainless steel bipolar plates have many advantage such as high electrical conductivity and mechanical strength and low fabrication cost. However, they need a passivation layer due to low corrosion resistance under PEM fuel cell operation condition. In this study, polyphenyene sulfide(PPS)/carbon composite coated stainless steel bipolar plates were fabricated by compression molding method after PPS/carbon composite sprayed on the stainless steel plate. PPS and carbon were chosen as the binder and conductive filler of passivation layer, respectively. The interfacial contact resistance and corrosion resistance of PPS/carbon composite coated stainless steel bipolar plates were investigated and compared to the stainless steel. The PPS/carbon composite coated stainless steel compared to stainless steel was improved interfacial contact resistance. The results of the potentiodynamic and potentiostatic measurements also showed that the PPS/carbon composite coated stainless steel did not corroded under PEM fuel cell operating conditions.

• 대한화학회지
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• 제58권5호
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• pp.437-444
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• 2014

변전위법과 전기화학적 임피던스측정법(electrochemical impedence spectroscopy)을 이용하여 borate 완충용액에서 Co-RDE의 전기화학적 부식과 부동화에 대하여 조사하였다. Tafel 기울기, 코발트 회전원판전극의 회전속도, 임피던스 그리고 부식전위와 부식전류의 pH 의존성으로부터 코발트의 부식과 부동화 반응 메커니즘과 환원반응에서의 수소 발생 반응구조를 제안하였다. EIS data로부터 등가회로를 제안하였으며 산화반응의 영역별로 전기화학적 변수들을 측정하였다. 부식전위에서 측정된 Nyquist plot의 induction loop가 낮은 주파수 영역에서 관측되는 것으로 보아 흡착/탈착 현상이 Co의 부식과정에 영향을 미치는 것으로 보인다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.142-145
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• 2004

In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.75-80
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• 2012

DC 마그네트론 스퍼터를 이용하여 $InSb$ 박막을 증착하고 증착온도, 후속 열처리, 증발 차폐막 및 적층구조의 영향을 조사 하였다. 증착직후의 $InSb$ 시편에서 증착온도의 증가와 더불어 이동도와 전자농도 모두 거의 선형적으로 증가 하였으며 이동도가 극히 낮은 영역에서의 이동도는 화학양론비보다도 결정립의 크기에 직접적으로 영향을 받는 것으로 확인 되었다. 차폐막이 없는 경우에 비하여 차폐막을 형성시킨 경우 이동도가 크게 증가 하였으며, 또한 적층구조 시편의 경우 $In$의 증착량 증가와 더불어 이동도가 증가 하였다. 이는 두 경우 모두 박막내의 $In$과 $Sb$의 화학양론비가 점차 정량에 가까워지기 때문인 것으로 판단된다. 차폐막을 형성시키고 열처리한 시편의 경우 열처리 시간이 길어질수록 박막의 이동도는 증가하고 있으며 박막의 최대 이동도값은 1612 $cm^2$/Vs로 측정 되었다.

• 한국응용과학기술학회지
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• 제32권1호
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• pp.40-47
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• 2015

Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

• Corrosion Science and Technology
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• 제17권4호
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• pp.154-165
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• 2018

During the process of sulfur dioxide removal, flue gas desulfurization equipment provides a serious internal corrosion environment in creating sulfuric acid dew point corrosion. Therefore, the utilities must use the excellent corrosion resistance of steel desulfurization facilities in the atmosphere. Until now, the trend in developing anti-sulfuric acid steels was essentially the addition of Cu, in order to improve the corrosion resistance. The experimental alloy used in this study is Fe-0.03C-1.0Mn-0.3Si-0.15Ni-0.31Cu alloys to which Ru, Zn and Ta were added. In order to investigate the effect of $H_2SO_4$ concentration and the alloying elements, chemical and electrochemical corrosion tests were performed. In a low concentration of $H_2SO_4$ solution, the major factor affecting the corrosion rate of low alloy steels was the exchange current density for $H^+/H_2$ reaction, while in a high concentration of $H_2SO_4$ solution, the major factors were the thin and dense passive film and resulting passivation behavior. The alloying elements reducing the exchange current density in low concentration of $H_2SO_4$, and the alloying elements decreasing the passive current density in high concentration of $H_2SO_4$, together play an important role in determining the corrosion rate of Cu-bearing low alloy steels in a wide range of $H_2SO_4$ solution.