• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.155-160
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• 2000

The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.502-507
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• 2014

Recently, improvement in the conversion efficiency of silicon-based solar cells has been achieved by decreasing emitter doping concentration, because the lightly doped emitter can effectively prevent the recombination of electrons and holes generated by solar light irradiation. This type of emitter is very thin due to the low doping concentration, thus conductive materials (i.e., silver) used for front electrodes can easily penetrate the emitter during a firing process because of their large diffusivity in silicon. This results in junction leakage currents which might reduce cell efficiencies. In this study, $Al_2O_3$-coated Ag powders were synthesized by an ultrasonic spray pyrolysis method and applied to the conductive materials of the front electrode to control the junction leakage current. The $Al_2O_3$ shell obstructs the Ag diffusion into the emitter during the firing process. The powder is spherical with a core-shell structure and the thickness of the $Al_2O_3$ shell is tens of nanometers. Solar cells were fabricated using pure Ag powders or the $Al_2O_3$-coated Ag powder as front electrode materials, and the conversion efficiency and junction leakage current were compared to investigate the role of the $Al_2O_3$ shell during the firing processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• Journal of IKEEE
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• v.20 no.2
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• pp.181-183
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• 2016

In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1815-1821
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• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• Environmental Engineering Research
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• v.13 no.4
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• pp.171-176
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• 2008

Studies on visible-light-driven photocatalysis of air pollutants at indoor air quality (IAQ) levels have been limited. Current study investigated visible-light derived photocatalysis with N-doped and S-doped titanium dioxide ($TiO_2$) for the control of benzene at indoor levels. Two preparation processes were employed for each of the two types of photocatalyst: urea-Degussa P-25 $TiO_2$ and titania-colloid methods for the N-doped $TiO_2$; and titanium isopropoxid- and tetraisopropoxide-thiourea methods for the S-doped $TiO_2$. Furthermore, two coating methods (EDTA- and acetylacetone-dissolving methods) were tested for both the N-doped and S-doped $TiO_2$. The two coating methods exhibited different photocatalytic degradation efficiency for the N-doped photocatalysts, whereas they did not exhibit any difference for the S-doped photocatalysts. In addition, the two doping processes showed different photocatalytic degradation efficiency for both the S-doped and N-doped photocatalysts. For both the N-doped and S-doped $TiO_2$, the photocatalytic oxidation (PCO) efficiency increased as the hydraulic diameter (HD) decreased. The degradation efficiency determined via a PCO system with visible-light induced $TiO_2$ was lower than that with UV-light induced unmodified $TiO_2$, which was obtained from previous studies. Nevertheless, it is noteworthy that for the photocatalytic annular reactor with the HD of 0.5 cm, PCO efficiency increased up to 52% for the N-doped $TiO_2$ and 60% for the S-doped $TiO_2$. Consequently, when combined with the advantage of visible light use over UV light use, it is suggested that with appropriate HD conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.2-243.2
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• 2011

ZnO materials with a wide band gap of approximately 3.3 eV has been used in transparent conducting oxides (TCO) due to exhibitinga high optical transmission, but its low conductivity acts as role of a limitation for conducting applications. Recently, Ga or Al-doped ZnO (GZO, AZO) becomes transparent conducting materials because of high optical transmission and excellent conductivity. However, the fundamental mechanism underlying the improvement of electrical conductivity of the GZO is still the subject of debate. In this study, we have fully investigated the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO (x=0, 3, 5.1, 5.6, 6.6 wt%). We manufactured Zn1-xGaxO by sintering ZnO and Ga2O3 powers, having a theoretical density of 99.9% and homogeneous Ga-dopant distribution in ZnO grains. The GZO containing 5.6 wt% Ga represents the highest electrical conductivity of $7.5{\times}10^{-4}{\Omega}{\cdot}m$. In particular, many twins and superlattices were induced by doping Ga in ZnO, revealed by X-ray diffraction measurements and TEM (transmission electron microscopy) observations. Twins developed in conventional ZnO crystal are generally formed at (110) and (112) planes, but we have observed the twins at (113) plane only, which is the first report in ZnO material. Interestingly, the superlattice structure was not observed at the grains in which twins are developed and the opposite case was true. This structural change in the GZO resulted in the difference of electrical conductivity. Enhancement of the conductivity was closely related to the extent of Ga ordering in the GZO lattice. Maximum conductivity was obtained at the GZO with a superlattice structure formed ideal ordering of Ga atoms.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.46-50
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• 2017

The Zn1-xMnxO ($0.00{\leq}x{\leq}0.06$) samples have been synthesized in the form of powder by the coprecipitation method at low temperature using $Zn(CH_3COO)_2$. $2H_2O$ and $Mn(CH_3COO)_2$. $4H_2O$ powders, as well as HCl and $NH_4OH$ solutions as starting materials. Characterization was conducted using XRD, TEM, XRF, FTIR and VSM. The result shows that the $Zn_{(1-x)}Mn_xO$ ($0.00{\leq}x{\leq}0.06$) nanoparticles have the wurtzite phase with a hexagonal structure and particle sizes ranging from 17.48 to 118.83 nm. In a qualitative analysis of XRF, the peaks that confirm the existence of the manganese element in Mn-doped ZnO samples were observed. Meanwhile, FTIR test result shows that there are peaks at around $500cm^{-1}$ and $400cm^{-1}$ in the FTIR spectra for Mn doped ZnO samples which clearly reveal the existence of the (Zn, Mn)-O strain mode. The (Zn, Mn)-O absorption peak positions have shifted to a lower wave number with increasing Mn doping content. The peak intensity is also lower if compared to that of the ZnO sample without doping. From the VSM test, it is shown that $Zn_{(1-x)}Mn_xO$ ($0.00{\leq}x{\leq}0.06$) nanoparticles are all paramagnetic having monotonically increased susceptibility as increasing Mn content.