• Title/Summary/Keyword: low dimensional materials

Search Result 431, Processing Time 0.026 seconds

Finite Element Analysis of the Reinforced Concrete Boundary-Beam-Wall System Subjected to Axial Load (축하중이 작용하는 RC 경계보-벽체 시스템의 해석적 평가)

  • Son, Hong-Jun;Kim, Seung-Il;Kim, Dae-Jin
    • Journal of the Computational Structural Engineering Institute of Korea
    • /
    • v.34 no.2
    • /
    • pp.93-100
    • /
    • 2021
  • In Korea, one of the most used structural systems for residential apartment buildings is the combination of the reinforced concrete (RC) wall and rahmen structures in the upper and lower floors, respectively. To alleviate the significant difference between the stiffnesses of these two structural systems, large transfer girders are generally required in the transition zone of the structure, which then results in the use of large amounts of construction materials and low economic feasibility. This paper proposes a new RC boundary-beam-wall system that can minimize the disadvantages of the RC transfer girder system. The structural performance of the proposed system subjected to axial loading was evaluated via rigorous three-dimensional nonlinear finite element analysis. Four parameters, namely the ratio of lower wall to upper wall lengths, distance between stirrups, main bar slope ratio, and slab length, were considered in the finite element analysis, and their effects on the maximum axial load were analyzed and discussed.

Numerical finite element study of a new perforated steel plate shear wall under cyclic loading

  • Farrokhi, Ali-Akbar;Rahimi, Sepideh;Beygi, Morteza Hosseinali;Hoseinzadeh, Mohamad
    • Earthquakes and Structures
    • /
    • v.22 no.6
    • /
    • pp.539-548
    • /
    • 2022
  • Steel plate shear walls (SPSWs) are one of the most important and widely used lateral load-bearing systems. The reason for this is easier execution than reinforced concrete (RC) shear walls, faster construction time, and lower final weight of the structure. However, the main drawback of SPSWs is premature buckling in low drift ratios, which affects the energy absorption capacity and global performance of the system. To address this problem, two groups of SPSWs under cyclic loading were investigated using the finite element method (FEM). In the first group, several series of circular rings have been used and in the second group, a new type of SPSW with concentric circular rings (CCRs) has been introduced. Numerous parameters include in yield stress of steel plate wall materials, steel panel thickness, and ring width were considered in nonlinear static analysis. At first, a three-dimensional (3D) numerical model was validated using three sets of laboratory SPSWs and the difference in results between numerical models and experimental specimens was less than 5% in all cases. The results of numerical models revealed that the full SPSW undergoes shear buckling at a drift ratio of 0.2% and its hysteresis behavior has a pinching in the middle part of load-drift ratio curve. Whereas, in the two categories of proposed SPSWs, the hysteresis behavior is complete and stable, and in most cases no capacity degradation of up to 6% drift ratio has been observed. Also, in most numerical models, the tangential stiffness remains almost constant in each cycle. Finally, for the innovative SPSW, a relationship was suggested to determine the shear capacity of the proposed steel wall relative to the wall slenderness coefficient.

Comparison of healing assessments of periapical endodontic surgery using conventional radiography and cone-beam computed tomography: A systematic review

  • Sharma, Garima;Abraham, Dax;Gupta, Alpa;Aggarwal, Vivek;Mehta, Namrata;Jala, Sucheta;Chauhan, Parul;Singh, Arundeep
    • Imaging Science in Dentistry
    • /
    • v.52 no.1
    • /
    • pp.1-9
    • /
    • 2022
  • Purpose: This systematic review aimed to compare assessments of the healing of periapical endodontic surgery using conventional radiography and cone-beam computed tomography (CBCT). Materials and Methods: This review of clinical studies was conducted according to the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) checklist. All articles published from 1990 to March 2020 pertaining to clinical and radiographic healing assessments after endodontic surgery using conventional radiography and CBCT were included. The question was "healing assessment of endodontic surgery using cone-beam computed tomography." The review was conducted by manual searching, as well as undertaking a review of electronic literature databases, including PubMed and Scopus. The studies included compared radiographic and CBCT assessments of periapical healing after periapical endodontic surgery. Results: The initial search retrieved 372 articles. The titles and abstracts of these articles were read, leading to the selection of 73 articles for full-text analysis. After the eligibility criteria were applied, 11 articles were selected for data extraction and qualitative analysis. The majority of studies found that CBCT enabled better assessments of healing than conventional radiography, suggesting higher efficacy of CBCT for correct diagnosis and treatment planning. A risk of bias assessment was done for 10 studies, which fell into the low to moderate risk categories. Conclusion: Three-dimensional radiography provides an overall better assessment of healing, which is imperative for correct diagnosis and treatment planning.

Which factors related to apical radiolucency may influence its radiographic detection? A study using CBCT as reference standard

  • Rocharles Cavalcante Fontenele;Eduarda Helena Leandro Nascimento;Hugo Gaeta-Araujo;Lais Oliveira de Araujo Cardelli;Deborah Queiroz Freitas
    • Restorative Dentistry and Endodontics
    • /
    • v.46 no.3
    • /
    • pp.43.1-43.9
    • /
    • 2021
  • Objectives: This study aimed to evaluate the detection rate of apical radiolucencies in 2-dimensional images using cone-beam computed tomography (CBCT) as the reference standard, and to determine which factors related to the apical radiolucencies and the teeth could influence its detection. Materials and Methods: The sample consisted of exams of patients who had panoramic (PAN) and/or periapical (PERI) radiography and CBCT. The exams were assessed by 2 oral radiologists and divided into PAN+CBCT (227 teeth-285 roots) and PERI+CBCT (94 teeth-115 roots). Radiographic images were evaluated for the presence of apical radiolucency, while CBCT images were assessed for presence, size, location, and involvement of the cortical bone (thinning, expansion, and destruction). Diagnostic values were obtained for PERI and PAN. Results: PERI and PAN presented high accuracy (0.83 and 0.77, respectively) and specificity (0.89 and 0.91, respectively), but low sensitivity, especially for PAN (0.40 vs. 0.65 of PERI). The size of the apical radiolucency was positively correlated with its detection in PERI and PAN (p < 0.001). For PAN, apical radiolucencies were 3.93 times more frequently detected when related to single-rooted teeth (p = 0.038). The other factors did not influence apical radiolucency detection (p > 0.05). Conclusions: PERI presents slightly better accuracy than PAN for the detection of apical radiolucency. The size is the only factor related to radiolucency that influences its detection, for both radiographic exams. For PAN, apical radiolucency is most often detected in single-rooted teeth.

A study on Resin Filling Analysis and Experiment by VAP and VaRTM Processes (VaRTM과 VAP 공정의 수지 충진실험 및 해석에 관한 연구)

  • Dong-Hwan Yoon;Kyeong-Ho Seo;Yu-Jung Kwon;Jin-Ho Choi
    • Composites Research
    • /
    • v.36 no.5
    • /
    • pp.310-314
    • /
    • 2023
  • VaRTM(Vacuum assisted resin transfer molding) and VAP(Vacuum assisted process) processes are a type of RTM(Resin transfer molding) process, and are typical out-of-autoclave (OOA) processes that can manufacture large structures at low cost. In this paper, a resin filling test was conducted to compare the VaRTM and VAP processes, and the filling process and dimensional stability were compared. In addition, an analysis method to simulate the filling process was developed, and a dielectric sensor was used to detect the flow front of the resin, which was compared with the analysis results. From the resin filling test, the total filling time of the composite plate was measured to be 48 minutes for the VAP process and 145 minutes for the VaRTM process, and the filling time by the VAP process was reduced by about 67%. In addition, it was confirmed that the VAP process was superior to the VaRTM process in the thickness control ability and uniformity of the composite plate.

Utility of Noncontrast Magnetic Resonance Angiography for Aneurysm Follow-Up and Detection of Endoleaks after Endovascular Aortic Repair

  • Hiroshi Kawada;Satoshi Goshima;Kota Sakurai;Yoshifumi Noda;Kimihiro Kajita;Yukichi Tanahashi;Nobuyuki Kawai;Narihiro Ishida;Katsuya Shimabukuro;Kiyoshi Doi;Masayuki Matsuo
    • Korean Journal of Radiology
    • /
    • v.22 no.4
    • /
    • pp.513-524
    • /
    • 2021
  • Objective: To assess the noncontrast two-dimensional single-shot balanced turbo-field-echo magnetic resonance angiography (b-TFE MRA) features of the abdominal aortic aneurysm (AAA) status following endovascular aneurysm repair (EVAR) and evaluate to detect endoleaks (ELs). Materials and Methods: We examined four aortic stent-grafts in a phantom study to assess the degree of metallic artifacts. We enrolled 46 EVAR-treated patients with AAA and/or common iliac artery aneurysm who underwent both computed tomography angiography (CTA) and b-TFE MRA after EVAR. Vascular measurements on CTA and b-TFE MRA were compared, and signal intensity ratios (SIRs) of the aneurysmal sac were correlated with the size changes in the AAA after EVAR (AAA prognoses). Furthermore, we examined six feasible b-TFE MRA features for the assessment of ELs. Results: There were robust intermodality (r = 0.92-0.99) correlations and interobserver (intraclass correlation coefficient = 0.97-0.99) agreement. No significant differences were noted between SIRs and aneurysm prognoses. Moreover, "mottled high-intensity" and "creeping high-intensity with the low-band rim" were recognized as significant imaging findings suspicious for the presence of ELs (p < 0.001), whereas "no signal black spot" and "layered high-intensity area" were determined as significant for the absence of ELs (p < 0.03). Based on the two positive features, sensitivity, specificity, and accuracy for the detection of ELs were 77.3%, 91.7%, and 84.8%, respectively. Furthermore, the k values (0.40-0.88) displayed moderate-to-almost perfect agreement. Conclusion: Noncontrast MRA could be a promising imaging modality for ascertaining patient follow-up after EVAR.

Reinterpretation of the protein identification process for proteomics data

  • Kwon, Kyung-Hoon;Lee, Sang-Kwang;Cho, Kun;Park, Gun-Wook;Kang, Byeong-Soo;Park, Young-Mok
    • Interdisciplinary Bio Central
    • /
    • v.1 no.3
    • /
    • pp.9.1-9.6
    • /
    • 2009
  • Introduction: In the mass spectrometry-based proteomics, biological samples are analyzed to identify proteins by mass spectrometer and database search. Database search is the process to select the best matches to the experimental mass spectra among the amino acid sequence database and we identify the protein as the matched sequence. The match score is defined to find the matches from the database and declare the highest scored hit as the most probable protein. According to the score definition, search result varies. In this study, the difference among search results of different search engines or different databases was investigated, in order to suggest a better way to identify more proteins with higher reliability. Materials and Methods: The protein extract of human mesenchymal stem cell was separated by several bands by one-dimensional electrophorysis. One-dimensional gel was excised one by one, digested by trypsin and analyzed by a mass spectrometer, FT LTQ. The tandem mass (MS/MS) spectra of peptide ions were applied to the database search of X!Tandem, Mascot and Sequest search engines with IPI human database and SwissProt database. The search result was filtered by several threshold probability values of the Trans-Proteomic Pipeline (TPP) of the Institute for Systems Biology. The analysis of the output which was generated from TPP was performed. Results and Discussion: For each MS/MS spectrum, the peptide sequences which were identified from different conditions such as search engines, threshold probability, and sequence database were compared. The main difference of peptide identification at high threshold probability was caused by not the difference of sequence database but the difference of the score. As the threshold probability decreases, the missed peptides appeared. Conversely, in the extremely high threshold level, we missed many true assignments. Conclusion and Prospects: The different identification result of the search engines was mainly caused by the different scoring algorithms. Usually in proteomics high-scored peptides are selected and low-scored peptides are discarded. Many of them are true negatives. By integrating the search results from different parameter and different search engines, the protein identification process can be improved.

A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.14-15
    • /
    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

  • PDF

N- and P-doping of Transition Metal Dichalcogenide (TMD) using Artificially Designed DNA with Lanthanide and Metal Ions

  • Kang, Dong-Ho;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.292-292
    • /
    • 2016
  • Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

  • PDF

Performance Comparison of Vertical DMOSFETs in Ga2O3 and 4H-SiC (Ga2O3와 4H-SiC Vertical DMOSFET 성능 비교)

  • Chung, Eui Suk;Kim, Young Jae;Koo, Sang-Mo
    • Journal of IKEEE
    • /
    • v.22 no.1
    • /
    • pp.180-184
    • /
    • 2018
  • Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.