• 제목/요약/키워드: local electrical properties

검색결과 132건 처리시간 0.036초

Cu(In,Ga)$Se_2$ 박막의 Cu 결함 및 In, Ga 비율의 변화에 따른 구조적, 광학적, 전기적 특성 연구 (Structural, optical, and electrical properties on Cu(In,Ga)$Se_2$ thin-films with Cu-defects and In/(In+Ga) ratio)

  • 정아름;김지영;조윌렴;조현준;김대환;성시준;강진규;이동하;남다현;정현식
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.47.1-47.1
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    • 2011
  • We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

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Local Gradient와 Median Filter에 근거한 초해상도 이미지 재구성 (Super Resolution Image Reconstruction based on Local Gradient and Median Filter)

  • ;조상복
    • 대한전자공학회논문지SP
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    • 제47권1호
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    • pp.120-127
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    • 2010
  • 본 논문은 높은 품질 SR 이미지를 획득하기 위해 국소 그라디언트를 기반으로 적응형 보간법을 이용하는 SR 방법을 제공한다. 이 방법에서, 내삽 화소와 인접하는 유효한 화소 사이에 거리는 국소 그라디언트 특징을 이용하여 고려되며, 보간 계수는 LR 이미지의 국소 그라디언트를 고려한다. 픽셀의 국소 그라디언트는 더 작을수록, 그리고 메디안 필터는 보간된 HR 이미지의 블러링과 노이즈를 감소시키기 위해 적용된다. 실험 결과는 특히 이미지의 에지 부분에서, 다른 방법과 비교하여 제안된 방법의 유효성을 보여준다.

Digital Image Watermarking Scheme using Adaptive Block Division

  • Cho, Soo-Hyung;Jung, Tae-Yeon;Joung, Young-Hoon;Lee, Kyeong-Hwan;Kim, Duk-Gyoo
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1228-1231
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    • 2002
  • Digital image watermarking scheme using adaptive block division is proposed. To increase the perceptual invisibility, the image is divided into blocks by local properties and the human visual system (HVS), then the significant blocks are selected in the divided blocks. The significant coefficient is determined by Weber's law in these blocks. To increase the robustness, low frequency domains of the discrete cosine transform (DCT) and the discrete wavelet transform (DWT) are used. The watermark is embedded into the selected significant blocks of the DCT's and DWT's low frequency domains with adaptive watermark strengths. The watermark strength is determined by the variance and the local properties of the significant block. The experimental results prove that the proposed scheme has a good robustness against several image processing operations (e.g. median filtering, cropping, scaling, JPEG, JPEG2000, etc.) without significant degradation of the watermarked image.

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Edge perturbation on electronic properties of boron nitride nanoribbons

  • K.L. Wong;K.W. Lai;M.W. Chuan;Y. Wong;A. Hamzah;S. Rusli;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P. Tan
    • Advances in nano research
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    • 제15권5호
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    • pp.385-399
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    • 2023
  • Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

ASYMPTOTIC PROPERTIES OF THE CONDITIONAL HAZARD FUNCTION ESTIMATE BY THE LOCAL LINEAR METHOD FOR FUNCTIONAL ERGODIC DATA

  • MOHAMMED BASSOUDI;ABDERRAHMANE BELGUERNA;HAMZA DAOUDI;ZEYNEB LAALA
    • Journal of applied mathematics & informatics
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    • 제41권6호
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    • pp.1341-1364
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    • 2023
  • This article introduces a method for estimating the conditional hazard function of a real-valued response variable based on a functional variable. The method uses local linear estimation of the conditional density and cumulative distribution function and is applied to a functional stationary ergodic process where the explanatory variable is in a semi-metric space and the response is a scalar value. We also examine the uniform almost complete convergence of this estimation technique.

고압 나트륨 방전에서의 아아크 플라즈마 모델 해석에 관한 연구 (A Study on the Analysis of Arc Plasma Model in the HPS Discharge)

  • 지철근;염정덕
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.220-223
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    • 1988
  • A the dependent model for wail-stabilized local thermodynamic equilibrium (LTE) arcs has been used to examine the high-pressure sodium vapor arc. Arc properties including temperature, electrical conductivity, and optically thick and optically thin radiation fluxes were calculated as functions of radius and time.

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Electrical Impedance Tomography as a Primary Screening Technique for Breast Cancer Detection

  • Akhtari-Zavare, Mehrnoosh;Latiff, Latiffah A
    • Asian Pacific Journal of Cancer Prevention
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    • 제16권14호
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    • pp.5595-5597
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    • 2015
  • Electrical impedance tomography (EIT) is a new non-invasive, mobile screening method which does not use ionizing radiation to the human breast. It is based on the theory that cancer cells display altered local dielectric properties, thus demonstrating measurably higher conductivity values. This article reviews the utilisation of EIT in breast cancer detection. It could be used as an adjunct to mammography and ultrasonography for breast cancer screening.

비정질 $Fe_{78}B_{13}Si_9$ 합금의 자기적 특성의 경년 열화 (Aging Effect of Magnetic Properties in Amorphous $Fe_{78}B_{13}Si_9$ Alloy)

  • 김기욱;민복기;송재성;홍진완;조현진;이동희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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    • pp.49-51
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    • 1988
  • The heat treatment condition and aging behavior of melt spun amorphous $Fe_{78}B_{13}Si_9$(Metglas 26058-2) were studied with investigating its magnetic properties, i.e., Br, $B_l$, Hc. The optimum heat treatment condition was $400^{\circ}C$, 1 hour under the external field of 200e, and aging was due to the surface oxidation and the appearance of local CSRO (chemical short lange order) with time and temperature. In addition. we investigated the effects of the thickness of the amorphous ribbons on the magnetic properties and aging effect of them.

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증착시 도핑된 비정질 Si 게이트를 갖는 MOS 캐패시터와 트랜지스터의 전기적 특성 (Electrical Properties of MOS Capacitors and Transistors with in-situ doped Amorphous Si Gate)

  • 이상돈;이현창;김재성;김봉렬
    • 전자공학회논문지A
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    • 제31A권6호
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    • pp.107-116
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    • 1994
  • In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

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블록기반 지역 명암대비 개선을 통한 전역 명암대비 향상 기법 (Global Contrast Enhancement Using Block based Local Contrast Improvement)

  • 김광현;한영준;한헌수
    • 전자공학회논문지SC
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    • 제45권1호
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    • pp.15-24
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    • 2008
  • 본 논문은 영상의 블록기반 지역 명암대비 향상을 통한 전역 명암대비 향상 기법을 제안한다. 전역 명암대비 향상 기법은 영상의 특성을 고려하지 않고 히스토그램 평활화만을 통해 명암값의 재분배를 수행함으로써 과도한 밝기값의 화소들을 갖는 결과영상을 유발한다. 반면에 블록기반 지역 명암대비 향상 기법은 블록화 현상 및 이를 줄이는 과정에서 영상의 중요한 특징을 훼손하는 문제점을 갖고 있다. 이런 문제점들을 해결하기 위해 본 논문은 입력영상을 다양한 블록 크기로 분할한 임시영상들에 대해 블록기반 히스토그램 평활화를 수행한다. 그리고 지역 명암대비 향상을 통해 얻어진 전역 히스토그램 평활화 함수를 원 영상에 적용하는 전역 명암대비 향상 기법을 수행한다. 지역 명암대비가 향상된 임시 영상으로부터 전역 히스토그램 평활화 함수를 얻기 때문에 제안하는 방법은 지역 명암대비 향상 기법과 전역 명암대비 향상 기법의 장점들을 갖는다.