• Journal of the Korean Society of Safety
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• v.11 no.1
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• pp.67-74
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• 1996

In order to investigate the effect and reliability coming up to properties of the matter due to the change of solid structure in dielectrics, the effect of dielectric characteristics for thermal treated LDPE film was made researches. Specimens of LDPE with thickness 100 [$\mu\textrm{m}$] were investigated into the change of solid structure by ageing. Thermal treated specimen were made, that were after applying heat at 100 [$^{\circ}C$] for 1 [hour] \circled1 air-cooled specimen slowly, \circled2 water-cooled specimen under the ,com temperature, \circled3 liquid nitrogen gas-cooled specimen rapidly. With specimen of thermal treated three types turn out and original, it was for dielectric characteristics to be experimented in the temperature range of 20~120 [$^{\circ}C$], frequency range of 30~1.5${\times}10^5/$[Hz], appling voltage from 300 to 1500[㎷]. Consequently, the degree of crystallinity was changed with 49~57 [%] according to the thermal treatment. In case of frequency, 100 [Hz], on the thermal dependance in dielectric characteristics, tan decreases due to cooling method.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1436-1440
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• 2007

Beryllium copper has been known to be an important material for the various fields of industry because it can be used for mechanical and electrical/electronic components that are subjected to elevated temperatures (up to $400^{\circ}C$ for short times). Blade type tip for probing the cells of liquid crystal display(LCD) was fabricated using beryllium copper foil. The dry film resist was employed as a mask for patterning of the blade type tip. The beryllium copper foil was etched using hydrochloric acidic iron-chloride solution. The concentration, temperature, and composition ratio of hydrochloric acidic iron-chloride solution affect the etching characteristics of beryllium copper foil. Nickel with the thickness of $3{\mu}m$ was electroplated on the patterned copper beryllium foil for enhancing its hardness, followed by electroplating gold for increasing its electrical conductivity. Finally, the dry film resist on the bridge was removed and half of the nickel was etched to complete the blade type tip.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.2-291.2
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• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Journal of the Korean Chemical Society
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• v.8 no.2
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• pp.57-61
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• 1964

It was verified at Part Ⅰ of this investigation that there is a minimum wettability between molten iron and graphite, which was preliminarily coated with magnesium, and thus the spheroidization of graphite might have resulted from the lack of wettability between magnesium-adsorbed graphite and iron matrix. Being continued from the last work, the wettability between pure iron and graphite, coated with the various thickness of cerium, are measured at melting point of pure iron in vacuum and 200 mmHg argon gas atmosphere. The result indicates the presence of a minimum wettability at a critical thickness of cerium film as was proved in the case of magnesium. The experimental analysis shows that, the minimum wettability could be attributed entirely to a minimum work of adhesion between liquid iron and graphite at a critical concentration of cerium in the iron-graphite interface.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2196-2203
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• 2020

A dryout mechanism model for rectangular narrow channels at high pressure conditions is developed by assuming that the Kelvin-Helmholtz instability triggered the occurrence of dryout. This model combines the advantages of theoretical analysis and empirical correlation. The unknown coefficients in the theoretical derivation are supported by the experimental data. Meanwhile, the decisive restriction of the experimental conditions on the applicability of the empirical correlation is avoided. The expression of vapor phase velocity at the time of dryout is derived, and the empirical correlation of liquid film thickness is introduced. Since the CHF value obtained from the liquid film thickness should be the same as the value obtained from the Kelvin-Helmholtz critical stability under the same condition, the convergent CHF value is obtained by iteratively calculating. Comparing with the experimental data under the pressure of 6.89-13.79 MPa, the average error of the model is -15.4% with the 95% confidence interval [-20.5%, -10.4%]. And the pressure has a decisive influence on the prediction accuracy of this model. Compared with the existing dryout code, the calculation speed of this model is faster, and the calculation accuracy is improved. This model, with great portability, could be applied to different objects and working conditions by changing the expression of the vapor phase velocity when the dryout phenomenon is triggered and the calculation formula of the liquid film.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.91-97
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• 1999

YIG $(Y_3Fe_5O_{12})$ films with 4~80 ${\mu}{\textrm}{m}$ thickness were epitaxially grown on GGG $(Gd_3Ga_5O_{12})$ substrates by LPE (liquid phase epitaxy) techniques. Using various melts having different chemical composition the growth temperature was varied as a parameter. Growth rate, surface morphology, chemical composition, lattice constant, saturation magnetization, and magnetic resonance of the films were investigated. Lattice mismatch between the substrate and film Δa, saturation magnetization, and magnetic resonance line width ΔH increased, decreased, and increased, respectively, as undercooling temperature ΔT increased. The films grown by using the melt with larger R$_1$and smaller R$_3$had smaller ΔH. The major origin of the increase of ΔH was the increase of Δa. It is considered that the magnetic field in the film became locally inhomogeneous with the increase of Δa due to the increase of inhomogenity in stress distribution to the film depth direction. Therefore, in order to grow YIG films with small microwave loss it is necessary to grow films at small ΔT using the melt with large R$_1$and small R$_3$resulting in a small Δa.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.243-247
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• 2015

Si(Al)ON precursor was synthesized by formation of new Si-N bond using organoaluminum imine and liquid type poly(phenyl carbosilane). It was decomposed between $200-600^{\circ}C$, and the ceramic yield was 51% after pyrolysis. 150 - 200 nm in thickness of coating film was obtained by spin coating method. The precursor was easily oxidized during process because it was unstable in air. However the oxygen content was limited to 0.5 - 0.7 to silicon in heat treatment step. Even though the content of nitrogen was decreased by pyrolysis, Al-N and Si-N bonds were formed in ammonia atmosphere, and Si(Al)ON film was formed with 0.2 in content to silicon.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1329-1337
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• 2005

The OLED (Organic Light Emitting Diodes) display recently used for the information indicating device has many advantages over the LCD (Liquid Crystal Display), and its demand will be increased highly. The linear cell should be designed carefully considering the uniformity of thin film on the substrate. Its design needs to compute the temperature field analytically because the uniformity for the thin film thickness depends on the temperature distribution of the source (organic material). In the present study, the design of the linear cell will be modified or improved on the basis of the temperature profiles obtained for the simplified linear cell. The temperature distributions are numerically calculated through the STAR-CD program, and the grids are generated by means of the ICEM CFD program. As the results of the simplified linear cell, the temperature deviation was shown in the parabolic form among the both ends and the center of the source. In order to reduce the temperature deviation, the configuration of the rectangular ends of the crucible was modified to the circular type. In consequence, the uniform temperature is maintained in the range of about 90 percent length of the source. It is expected that the present methods and results on the temperature analysis can be very useful to manufacture the vapor deposition device.