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검색결과 206건 처리시간 0.025초

LB법을 이용한 viologen-diTCNQ 박막의 광학적 및 전기적 특성 (Optical and Electrical Characteristics of viologen-diTCNQ thin film prepared by Langmuir-Blodgett Technique)

  • 이용수;신동명;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.45-48
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    • 1997
  • Enhancing the electrical conductivity of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir-Blodgett(LB) technique has recently been attracted interest as the a method of deposition ultrathin films. We have fabricated N-docosyl-N'-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the optical and electrical conductivity. We have measured UV/visible and FT-lR spectrum. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on both temperature and incident angle, which indicates conducting species change. The in-plane electrical conductivity of 21 layers is approximately 1.37$\times$10$^{-6}$ (S/cm).

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RF 스퍼터링으로 Si 기판위에 제작된 ZnO 박막에서 ZnO 버퍼층의 가스분위기 영향 (Effects of the Gas Atmosphere of ZnO Buffer Layers in the ZnO films grown on Si Substrates by RF Magnetron Sputtering)

  • 박태은;조형균;공보현;홍순구
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.656-661
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    • 2005
  • The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

Copper formate의 레이저 유도 열 분해에 의한 Cu 박막의 제조 (Formation of copper films from copper formate by laser-induced pyrolytic decomposition)

  • 김재권;박세기;이천
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1444-1446
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    • 1998
  • Direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films using a focused argon ion laser beam($\lambda$ =514.5nm) on a glass. The thickness and linewidth of the deposited copper films were considered as a function of laser power and scan speed. As the result from AES, there are no other elements except for copper after decomposition in the atmospheric ambient.

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100nm 이하의 CMOS소자를 위한 Ni Silicide Technology (Technology of Ni Silicide for sub-100nm CMOS Device)

  • 이헌진;지희환;배미숙;안순의;박성형;이기민;이주형;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.237-240
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    • 2002
  • In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.

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간섭계용 헬륨-네온 레이저의 주파수 안정화 (Frequency stabilization of HeNe laser for interferometry)

  • 주기남;김승우
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.260-263
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    • 2003
  • Lasers are used as the source of the interferometers in the industrial field. These lasers need 2 requirements. The first is the narrow linewidth of laser for the long coherence length. The second is the stabilized frequency of laser for the precision measurement. Now HeNe lasers are mostly used and the frequency stability is about 10$^{-9}$ . In this paper, we construct the HeNe laser systems of frequency stabilization using typical 2 method, the beat frequency stabilization method and the intensity difference method. So, we get the frequency stabilities of 2.01$\times$10$^{-9}$ (0.1s), 3.4$\times$10$^{-9}$ (0.1s).

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5 nm 급 반도체 배선 공정 기술 개발 (Development of Interconnect Process Technology for 5 nm Technology Nodes)

  • 최은미;표성규
    • 마이크로전자및패키징학회지
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    • 제23권4호
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    • pp.25-29
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    • 2016
  • The semiconductor industry has been developed mainly by micronization process due to many advantages of miniaturization of devices. Mass production of semiconductors of 10 nm class has been started recently, and it is expected that the technology generation of 5 nm & 7 nm technology will come. However, excessive linewidth reduction affects physical limits and device reliability. To solve these problems, new process technology development and new concept devices are being studied. In this review, we introduce the next generation technology and introduce the advanced research for the new concept device.

Methanol Oxidation Effect on Carbon Supported Pt Particles Studied by 13C NMR, XRD, and TEM

  • Han, Kee Sung;Han, Oc Hee
    • Bulletin of the Korean Chemical Society
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    • 제27권8호
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    • pp.1121-1126
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    • 2006
  • Methanol oxidation effect on carbon supported Pt was investigated as a function of Pt content in a sample which is closely correlated with Pt particle sizes. After prolonged methanol oxidation the Pt particle size did not change within the experimental error ranges. The $^{13}C$ chemical shift and linewidth of CO adsorbed on Pt show non-linear behavior simply due to the Pt particle size difference. The Pt size variation difference between this work and the previous reports of the particle growths is explained by the experimental temperature difference.

Ferromagnetic Resonance Observation of Martensitic Phase Transformation in Ni-Mn-Ga Ferromagnetic Shape Memory Films

  • Dubowik, J.;Kudryavtsev, Y.V.;Lee, Y.P
    • Journal of Magnetics
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    • 제9권2호
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    • pp.37-39
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    • 2004
  • Polycrystalline Ni-Mn-Ga films have been deposited onto mica substrates held at 720 K by flash-evaporation method. At room temperature the films have a tetragonal structure with a = b = 0.598 and c = 0.576 nm typical for bulk $Ni_2MnGa$ below a martensitic transformation. Temperature measurements of ferromagnetic resonance reveal a martensitic phase transformation at 310 K. The transformation brings about a substantial decrease in the effective magnetization and a drastic increase in the ferromagnetic resonance linewidth due to a strong increase in the magnetic anisotropy in the martensitic phase.

자성 박막에서 여기되는 스핀파 거동 (Behavior of Spin Waves Excited in Magnetic Thin Film)

  • 한기평;손영준;백문철;조경익
    • 한국자기학회지
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    • 제10권2호
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    • pp.86-92
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    • 2000
  • 자성 박막 표면에서의 일축 자기이방성을 고려한 자화의 경계조건을 Maxwell 방정식과 자화에 대한 Gilbert 방정식을 동시에 만족하는 해에 적용하여 자성박막에서 여기되는 스핀파 공명신호에 대한 모의실험을 수행하였다. 공명신호에 영향을 주는 물리량은 박막두께, 교환강성 상수, 표면 자기이방성 상수, 포화자화, 감쇠 상수, 전기비저항 등이며, 이러한 물리량들이 자성 박막에서 여기되는 스핀파 거동에 미치는 영향을 공명흡수선의 공명자기장, 선폭, 세기로 구분하여 조사하였다.

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단일 모드 공진기에서의 동역학 공명형광 (Dynamic Resonance Fluorescence in a Colored Vacuum)

  • Hyoncheol Nha;Chough, Young-Tak;Wonho Jhe;Kyoungwon An
    • 한국광학회:학술대회논문집
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    • 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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    • pp.126-127
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    • 2000
  • Resonance fluorescence is the manifestation of the interaction between the physical system under consideration and the vacuum-field fluctuation. The fluorescence spectrum provides such physical informations as the energy-level structure of the system, instabilities and relative populations of the energy levels, etc.. One of the typical fluorescence spectra is the Mollow triplet appearing when two-level atoms are driven by a strong coherent field in free space$^{(1)}$ . In the weak field limit, the singlet instead of the triplet is obtained with a reduced linewidth due to the squeezing of one quadrature phase of the induced atomic dipole$^{(2)}$ . On the other hand, when the atoms are put inside a cavity rather than in free space, a doublet spectrum due to the vacuum Rabi-splitting is achieved, showing clearly the coupling of atoms and the cavity in the single-quantum limit$^{(3)}$ . (omitted)

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