• 제목/요약/키워드: limiting process

검색결과 472건 처리시간 0.026초

Confocal Scanning Laser Microscopy 를 이용한 계란에서의 Salmonella enteritidis 오염 연구 (Studies on Salmonella enteritidis Contamination in Chicken Egg using Confocal Scanning Laser Microscopy)

  • 장금일;박종현;김광엽
    • 한국식품과학회지
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    • 제31권3호
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    • pp.771-777
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    • 1999
  • CSLM 기술을 이용하여 Salmonella enteritidis에 의한 계란 오염 과정을 관찰하여 난막의 3중막 구조, cuticle 층 그리고 5가지 필름 피복의 침투 방어효과를 조사하였다. 난막을 구성하는 fiber의 지름은 각각 outer membrane $1.5{\sim}7.2\;{\mu}m$, inner membrane $0.8{\sim}2.0\;{\mu}m$이었고, limiting membrane을 구성하는 입자의 지름은 $0.1{\sim}1.4\;{\mu}m$이었으며, 두께는 각각 평균 10.0, 3.5, $3.6\;{\mu}m$이었다. 난각과 접해 있는 outer membrane은 다음 층인 inner membrane과 부분적으로 중첩되어있고, limiting membrane의 입자들은 매우 밀집되어 inner membrane과 중첩된 상태로 존재하였다. Cuticle층은 전체 계란 표면적 중 $40{\sim}80%$ 를 덮고 있었으며, 두께는 평균 $6.0\;{\mu}m$이었고 피복 필름들의 평균 두께는 자각 mineral oil $5.0\;{\mu}m$, dextrin $3.6\;{\mu}m$, gelatin $3.9\;{\mu}m$, starch $2.5\;{\mu}m$, chitosan $2.2\;{\mu}m$이었다. 필름 피복에 의한 Salmonella enteritidis 생육 억제효과를 관찰한 결과, chitosan이 가장 효과적이었다. 그리고 trisodium phosphate (TSP), cetylpyridinium chloride (CPC) 처리, 5종의 필름 피복 처리와 무처리한 계란표면에 Salmonella enteritidis를 접종한 후 내부 전이 과정을 CSLM을 이용하여 다색영상화(multi-color imaging)와 시간당 투과 균수에 대한 plate count로 비교한 결과, 난각이나 3중막 구조의 난막보다는 cuticle 층이 Salmonella균의 오염을 차단하는데 결정적인 역할을 하는 것으로 나타났으며, chitosan 피복이 cuticle 층과 비슷한 효과를 보였다. 따라서 피복 필름중에서 chitosan이 최외부 방어막인 cuticle층이 결손된 난각 부위를 피복하는데 가장 적합할 것으로 사료된다.

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반도체 ALD 공정에서의 질화규소 증착 수치해석 (Numerical Analysis on Silicon Nitride Deposition onto a Semiconductor Wafer in Atomic Layer Deposition)

  • 송근수;유경훈
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.2032-2037
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    • 2007
  • Numerical analysis was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silane and ammonia as precursors. The present study simulated the surface reactions for as-deposited $Si_3N_4$ as well as the kinetics for the reactions of $SiH_4$ and $NH_3$on the semiconductor wafer. The present numerical results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.

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전력 반도체 소자의 설계에 있어서 FLR의 Design 및 Process Parameter에 따른 PN접합의 항복특성에 관한 고찰 (A Study on the PN Junction Breakdown Characteristics with Design and Process Parameters of FLR in Power Device Design)

  • 송대식;강이구;황상준;성만영;이철진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1146-1148
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    • 1995
  • To improve the breakdown characteristics of vertical power devices, field limiting ring(FLR) is popularly used. In this paper, at vertical power device having $300{\sim}600V$ breakdown voltage, FLR thecnique is considered, by two dimensional computer simulator, with the various of parameters; number of FLR, seperation distance of first FLR from the main juncton and second FLR from the first FLR, doping concentration and thickness of epi-layer, etc.. Below $40{\mu}m$ epi thickness, and for the case of one FLR, the maximum breakdown voltage, 580V is obtained.

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Cusum of squares test for discretely observed sample from diusion processesy

  • Lee, Sang-Yeol;Lee, Tae-Wook;Na, Ok-Young
    • Journal of the Korean Data and Information Science Society
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    • 제21권1호
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    • pp.179-183
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    • 2010
  • In this paper, we consider the change point problem in diusion processes based on discretely observed sample. Particularly, we consider the change point test for the dispersion parameter when the drift has unknown parameters. In performing a test, we employ the cusum of squares test based on the residuals. It is shown that the test has a limiting distribution of the sup of a Brownian bridge. A simulation result as to the Ornstein-Uhlenbeck process is provided for illustration. It demonstrates the validity of our test.

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

  • Chung, Yonghwa;Lee, Chi-Woo
    • Journal of Electrochemical Science and Technology
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    • 제3권3호
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    • pp.95-115
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    • 2012
  • Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

Weak Convergence of Processes Occurring in Statistical Mechanics

  • Jeon, Jong-Woo
    • Journal of the Korean Statistical Society
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    • 제12권1호
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    • pp.10-17
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    • 1983
  • Let $X^{(n)}_j, j=1,2,\cdots,n, n=1,2,\cdots$ be a triangular array of random variables which arise naturally in a study of ferromagnetism in statistical mechanics. This paper presents weak convergence of random function $W_n(t)$, an appropriately normalized partial sum process based on $S^{(n)}_n = X^{(n)}_i+\cdot+X^{(n)}_n$. The limiting process W(t) is shown to be Gaussian when weak dependence exists. At the critical point where the change form weak to strong dependence takes place, W(t) turns out to be non-Gaussian. Our results are direct extensions of work by Ellis and Newmam (1978). An example is considered and the relation of these results to critical phenomena is briefly explained.

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압력 및 용존산소 농도가 활성슬러지에 미치는 영향 (Effects of Pressure and Dissolved Oxygen Concentration on the Activated Sludge)

  • 양병수;신현무
    • 한국환경과학회지
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    • 제4권3호
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    • pp.259-267
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    • 1995
  • This study was conducted to evaluate the effects of pressure and dissolved oxygen concentration on the activated slut비e and to determine the optimum depth of deep shaft process. Some results from this study were summarized as follows. 1. It is considered that low sludge product in the activated sludge system maintaining high dissolved oxygen concentration is attributed to the increase of endogeneous respiration rate caused by the increase of aerobic zone in the sludge floe. 2. The increase of dissolved oxygen concentration does not affect to the increase of organic removal efficiency greatly and therefore the limiting factor is the substrate transfer into the inner part of floe. 3. The yield coefficient, Y is decreased in proportion to the increase of oxygen concentration. In this study, Y values arre ranged from 0.70 to 0.41 according to the variation of dissolved oxygen concentration from 18.0mg/$\ell$ to 258 mg/$\ell$. 4. The optimum depth of deep shaft process should be determined within the limits of non-toxicity to the microorganism and it is about loom in this study.

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The Effect of Particle Size on Ignition Characteristics of Pulverized High-Volatile Bituminous Coal

  • Kim, Hyung-Taek
    • 에너지공학
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    • 제2권3호
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    • pp.285-292
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    • 1993
  • A cylindrical-shape, horizontal furnace was used to investigate the effect of particle size on the pulverized coal combustion behavior. Three differently-sized fractions (5, 30, and 44 microns in average diameter) of high-volatile bituminous coal, were burned in the test furnace. Ignition characteristics of pulverized coal flame were determined through the amount of methane in the carrier gas for the self-sustaining flame. Easiest ignition occurred with the immediately-sized coal particles. Ignition of coal jet flame appeared to occur through a gas-phase homogeneous process for particles larger than 30 microns. Below this limiting size, heterogeneous process probably dominated ignition of coal flame. Oxygen concentration of combustion air was varied up to 50%, to determine the oxygen-enrichment effect on the coal ignition behavior. Oxygen enrichment of primary air assisted ignition behavior of pulverized coal flame. However, enrichment of secondary air didn't produce any effect on the ignition behavior.

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3차원 2-Step Braided 복합재료의 탄성 계수 예측 (Elastic Properties of 2-Step Braided Composites)

  • 변준형
    • 연구논문집
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    • 통권23호
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    • pp.45-56
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    • 1993
  • In order to acquire more comprehensive understanding of textile composites, the processing-microstructure-performance relationships for a variety of material systems, reinforcing schemes and processing technologies should be established. In this paper, emphasis is placed on the integrated analysis of three-dimensional (3-D) 2-step braided composites. The analysis includes the geometric model of unit cells, identification of key process parameters and processing windows due to limiting geometries of yarn jamming, and prediction of elastic constants of the composite. The coordinate transformation and averaging of stiffness and compliance constants are utilized in the prediction of elastic constants. Since there are several types of unit cells in the thickness and width directions of the composites, characterization of mechanical properties is based upon the macro-cell, which occupies the entire cross-section and the unit pitch length of the sample. The performance map demonstrates that a wide range of elastic properties can be achieved by varying the geometric and process parameters.

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ALD법으로 성장시킨 $Al_2$O$_3$ 박막의 특성분석 (Characteristic Analysis of $Al_2$O$_3$Thin Films Grown by Atomic Layer Deposition)

  • 성석재;김동진;배영호;이정희
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.185-188
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    • 2001
  • In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

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