• 제목/요약/키워드: limiting device

검색결과 155건 처리시간 0.022초

전력 반도체 소자의 설계에 있어서 FLR의 Design 및 Process Parameter에 따른 PN접합의 항복특성에 관한 고찰 (A Study on the PN Junction Breakdown Characteristics with Design and Process Parameters of FLR in Power Device Design)

  • 송대식;강이구;황상준;성만영;이철진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1146-1148
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    • 1995
  • To improve the breakdown characteristics of vertical power devices, field limiting ring(FLR) is popularly used. In this paper, at vertical power device having $300{\sim}600V$ breakdown voltage, FLR thecnique is considered, by two dimensional computer simulator, with the various of parameters; number of FLR, seperation distance of first FLR from the main juncton and second FLR from the first FLR, doping concentration and thickness of epi-layer, etc.. Below $40{\mu}m$ epi thickness, and for the case of one FLR, the maximum breakdown voltage, 580V is obtained.

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광대역 과도전압 차단장치의 설계 및 제작 (Design and Fabrication of Wide-band Transient Voltage Blocking Device)

  • 송재용;이종혁;길경석
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1999년도 춘계종합학술대회
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    • pp.330-334
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    • 1999
  • This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

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IMI-O고분자 LB막의 전기적 특성 (Electrical Properties of LB Films by Using IMI-O Polymer)

  • 정상범;유승엽;박재철;이범종;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.202-205
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    • 1997
  • In this paper, we synthesized poly(N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene(IMI-O) polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. Evaluation of LB film have been processed such as the technique of EA, $^{1}$H-NMR, FT-IR. Also, the deposition status was observed by SEM and Metal/Insulator/Metal(MIM) device was fabricated for investigation of electric properties. In our experimental results. The surface pressure for the solid state was investigated to 20~35[dyne/cm] by the $\pi$ -A isotherm and the limiting area was about 40 ~45 ($\AA$$^2$/molecule). The deposition status of LB films was confirmed by SEM. The conductivity of LB film was found to be 10$^{-14}$ ~10$^{-13}$ [S/cm] by I-V characteristic.

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고온초전도체를 이용한 전류제한장치의 개발 (Development of superconducting current limiting device used high-$T_{c}$ superconductor)

  • 최명호;강형곤;유현수;박성진;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.35-38
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    • 1993
  • SCLD(supercondocting current 1imiting device) with YBaCuO superconductor was fabricated by the sol-gel and the doctor-blade method. Critical current density ($J_{c}$) and critical current ($I_{c}$) of the SCLD are 100.27 A/$cm^2$and 1A at 77K and the electrodes contact with SCLD by silver paste. The SCL was connected with test circuit in series. When apple iud current exceed critical current value of the SCLD in testing circuit, the SCLD ristricts the over current by generating resistance itself without delay. Resistance of SCLD increase lineary 0 to 1.6$\Omega$ in propotion to applied current above the critical current $I_{c}$.

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자기신호처리 적외선 감지소자의 온도효과를 고려한 해석적 모델 (An analytical model considering temperature effects in self-signal processing infrared detectors)

  • 조병섭;곽계달
    • 전자공학회논문지A
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    • 제32A권3호
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    • pp.124-133
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    • 1995
  • A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

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전력계통에 초전도한류기 적용시 차단용량 확보를 위한 초전도한류기 적용방안 연구 (Analysis on the Application Capacity of the Superconducting Fault Current Limiter considering Reclosing and Fault Current)

  • 김진석;임성훈;김재철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2015년도 제46회 하계학술대회
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    • pp.592-593
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    • 2015
  • Recently, the fault current has increased to exceed the rated breaking capacity of protective device due to the growth of the power demand on the power system where is changed into the loop-, mesh-, network grid. To limit fault current, the superconducting fault current limiter (SFCL) is announced with various methods. In many researches, the current limiting effect with the SFCL has been analyzed considering the rated breaking capacity of the CB with one fault condition. However, the power system has various short circuit and operation conditions. In order to select the capacity of the SFCL with reclosing operation and burden of the fault current on the protective device, the characteristics of the power system were investigated. Through the analysis, the evaluation method of the current rate was improved.

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Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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초전도 코일 적용으로 인한 DC 차단기의 차단 용량 증대 (Extension of Cut-off Capacity of DC Circuit Breaker due to Superconducting Coil Application)

  • 최혜원;최효상
    • 전기학회논문지
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    • 제68권4호
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    • pp.593-597
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    • 2019
  • We proposed a current Interruption type DC superconducting circuit breaker(I-DC SCB), a protection device that combines the current limiting technology of a superconductor with the cut-off technology of circuit breaker. Unlike existing protective devices, the current I-DC SCB is a device that combines two protection functions, notably improving failure probability and operational reliability. It is also applicable to all DC systems, such as HV, MV, and LVDC, due to the ease in capacity increase. The 100 kV I-DC SCB was designed after taking into account the actual power system conditions, followed by an analysis of the transient characteristics and the breaking range of the limiter. The results of the analysis showed that the I-DC SCB had a fault current limit of about 75% at the rated voltage, and completed the cut-off operation within about 20 ms.

Development and experimental study on cable-sliding modular expansion joints

  • Gao, Kang;Yuan, Wan C.;Dang, Xin Z.
    • Structural Engineering and Mechanics
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    • 제61권6호
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    • pp.795-806
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    • 2017
  • According to the characteristics of continuous beam bridges, the relative displacement is too large to collision or even girder falling under earthquakes. A device named Cable-sliding Modular Expansion Joints(CMEJs) that can control the relative displacement and avoid collision under different ground motions is proposed. Working principle and mechanical model is described. This paper design the CMEJs, establish the restoring force model, verify the force model of this device by the pseudo-static tests, and describe and analyze results of the tests, and then based on a triple continuous beam bridge that has different heights of piers, a 3D model with or without CMEJs were established under Conventional System (CS) and Seismic Isolation System (SIS). The results show that this device can control the relative displacement and avoid collisions. The combination of isolation technology and CMEJs can be more effective to achieve both functions, but it need to take measures to prevent girder falling due to the displacement between pier and beam under large earthquakes.

Analog active valve control design for non-linear semi-active resetable devices

  • Rodgers, Geoffrey W.;Chase, J. Geoffrey;Corman, Sylvain
    • Smart Structures and Systems
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    • 제19권5호
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    • pp.487-497
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    • 2017
  • Semi-active devices use the building's own motion to produce resistive forces and are thus strictly dissipative and require little power. Devices that independently control the binary open/closed valve state can enable novel device hysteresis loops that were not previously possible. However, some device hysteresis loops cannot be obtained without active analog valve control allowing slower, controlled release of stored energy, and is presents an ongoing limitation in obtaining the full range of possibilities offered by these devices. This in silico study develops a proportional-derivative feedback control law using a validated nonlinear device model to track an ideal diamond-shaped force-displacement response profile using active analog valve control. It is validated by comparison to the ideal shape for both sinusoidal and random seismic input motions. Structural application specific spectral analysis compares the performance for the non-linear, actively controlled case to those obtained with an ideal, linear model to validate that the potential performance will be retained when considering realistic nonlinear behaviour and the designed valve control approach. Results show tracking of the device force-displacement loop to within 3-5% of the desired ideal curve. Valve delay, rather than control law design, is the primary limiting factor, and analysis indicates a ratio of valve delay to structural period must be 1/10 or smaller to ensure adequate tracking, relating valve performance to structural period and overall device performance under control. Overall, the results show that active analog feedback control of energy release in these devices can significantly increase the range of resetable, valve-controlled semi-active device performance and hysteresis loops, in turn increasing their performance envelop and application space.