• 전기학회논문지
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• 제60권10호
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• pp.1817-1822
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• 2011

The fault current has been increasing due to expansive substation facilities for meeting the increase of demand. To limit increasing fault current in a power system, among methods the superconducting fault current limiter (SFCL) has been considered to be adopted in the power grid. However, in case of adopting SFCL in the power system, most of SFCLs need to solve problems such as recovery, cost. With efforts to solve those problems, the novel fault current limiting device which is called hybrid SFCL is developed. To apply the hybrid SFCL, it has to be needed to analyze application possibility and itself operation characteristics. In this paper, the fault current limiting and operation characteristics of hybrid SFCL with first half cycle the limiting operation in case of various resistances of superconducting element were analyzed through experiment.

• Journal of Advanced Marine Engineering and Technology
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• 제23권2호
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.904-908
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• 2013

When an abnormal condition occurs due to a fault current at a consumer location where electricity is supplied through a high-capacity and high-$T_c$ superconducting(HTS) cable, the HTS cable would be damaged if there is no appropriate measure to protect it. Therefore, appropriate measures are needed to protect HTS cables. The fault-current-limiting HTS cable that was suggested in this study performs an ideal transport current function in normal operations and plays a role in limiting a fault current in abnormal operation (i.e., when a fault current is applied). It has a structure that facilitated its self-current-limiting ability through device change and reconfiguration in the existing HTS cable without extra switching equipment. To complete this structure, it is essential to investigate about the selection of the superconducting wire. Therefore, in this paper, HTS wire using two types of different stabilization layer is compared and examined the stability and current limiting properties under the existence of a fault current.

• Progress in Superconductivity
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• 제12권1호
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• pp.23-26
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• 2010

A double line commutation (DLC) type SFCL with first peak limiting function has been proposed for ideal fault current limiting operation. Very fast switching (commutation) without any arc or high voltage problems for any kind of switching device is needed for the first peak current limiting. We've tried to find suitable conditions for a successful switching of a Vacuum Interrupter (VI) with HTS elements as a Peak Current limiting Resistance (PCR).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.371-371
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• 2009

For the application of superconducting wires to fault current limiting devices, it is required that they have a high rated voltage when a fault occurs. Stabilizer-free coated conductors, particularly, shows a good performance for the high rated voltage, which is beyond 0.6 V/cm. In this study, using the stabilizer-free coated conductors, we made fault current limiting devices and examined their characteristics. Fault current limiting devices were fabricated with a shape of the cylinder of a mono-filar coil winding. Stabilizer-free coated conductors were wound along the mono-filar coil line and the terminal parts between the wire and metal were soldered using In solder. Two kinds of devices were fabricated by a different method in the terminal joint, one was made by a soldering and the other was made by a soldering-free joint. Critical currents and resistance at the joint parts were measured. In addition, long-time current flowing tests were also carried out for the characterization of the fault current limiting devices.

• 한국가스학회지
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• 제25권5호
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• pp.19-29
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• 2021

기후변화에 대응하기 위해 세계적으로 이산화탄소 및 대기오염 물질 배출 규제가 점차 강화됨에 따라 내연 기관 자동차를 친환경 자동차로 전환하려는 추세이다. 이는 정부의 수소 에너지 활성화 정책에 따른 충전 인프라 구축, 충전 설비 핵심 부품의 국산화 지원으로 가속화되고 있다. 본 연구에서는 유한 요소 해석을 통해 수소 연료 전지 자동차 용기 밸브의 과류 방지 장치를 설계하고, 시험을 통해 성능을 평가하였다. 주요 시험 항목인 정수압, 연속 작동, 압력 임펄스, 누설, 작동 시험을 ISO 12619-2, ISO 12619-11의 시험 방법에 따라 수행한 결과 요구 조건을 만족함을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1072-1074
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• 1995

Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• 대한전기학회논문지
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• 제44권4호
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• pp.490-495
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• 1995

A bipolar junction transistor which exihibits 1000V breakdown voltage is designed and fabricated using FLR (Field Limiting Rings). Three dimensional effects on the breakdown voltage is investigated in the cylindrical coordinate and the simulation results are compared with the results in the rectangular coordinate. Breakdown voltage of the device with 3 FLR is simulated to be 1420V in the cylindrical coordinate while it is 1580V in rectangular coordinate. Bipolar junction transistor has been fabricated using the epitaxial wafer of which resistivity is 86 .OMEGA.cm and thickness is 105 .mu.m. Si$_{3}$N$_{4}$ and glass are employed for the passivation. Breakdown of the fabricated device is measured to be 1442V which shows better greement with the simulation results in cylindrical coordination.

• 한국지진공학회논문집
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• 제2권4호
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• pp.145-154
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• 1998

이동제한장치는 내진분리된 교량 또는 교각에 소서인지가 발생하는 다경간연속교에 있어서 지진에 의한 교축방향 최대변위 및 잔류변위를 제한함에 있어 매우 효과적이다 교축방향의 수평변위가 이동제한장치에 의해 제한되는 경우 상부구조의 최대변위를 예측하기 위해서 비선셩동적해석을 설계에 실무적으로 사용하기에는 시간소요 및 해석상 어려움이 있다 본 연구에서는 등가탄성해석방법과 가속도-변위 스펙트럼을 이용한 간단한 이동제한장치 설계절차를 제시하였다 여기서 제시된 방법은 이동제한 장치의 설치위치 및 이격거리를 결정함에 있어 매우 효율적으로 사용할 수 있을 것이다.