• Title/Summary/Keyword: layered structure

Search Result 1,141, Processing Time 0.024 seconds

Organo-Compatible Gate Dielectrics for High-performance Organic Field-effect Transistors (고성능 유기 전계효과 트랜지스터를 위한 유기친화 게이트 절연층)

  • Lee, Minjung;Lee, Seulyi;Yoo, Jaeseok;Jang, Mi;Yang, Hoichang
    • Applied Chemistry for Engineering
    • /
    • v.24 no.3
    • /
    • pp.219-226
    • /
    • 2013
  • Organic semiconductor-based soft electronics has potential advantages for next-generation electronics and displays, which request mobile convenience, flexibility, light-weight, large area, etc. Organic field-effect transistors (OFET) are core elements for soft electronic applications, such as e-paper, e-book, smart card, RFID tag, photovoltaics, portable computer, sensor, memory, etc. An optimal multi-layered structure of organic semiconductor, insulator, and electrodes is required to achieve high-performance OFET. Since most organic semiconductors are self-assembled structures with weak van der Waals forces during film formation, their crystalline structures and orientation are significantly affected by environmental conditions, specifically, substrate properties of surface energy and roughness, changing the corresponding OFET. Organo-compatible insulators and surface treatments can induce the crystal structure and orientation of solution- or vacuum-processable organic semiconductors preferential to the charge-carrier transport in OFET.

Recent Advancement on the Knowledges of Meiotic Division (I) (減數分裂, 最近의 進步(I))

  • 한창열
    • Korean Journal of Plant Tissue Culture
    • /
    • v.25 no.6
    • /
    • pp.453-475
    • /
    • 1998
  • During the 100 years since the initial discovery of meiotic phenomenon many brilliant aspects have been elucidated, but further researches based on light microscopy alone as an experimental tool have been found to have some limits and shortcomings. By the use of electron microscopy and armed with the advanced knowledges on modern genetics and biochemistry it has been possible to applu molecular technology in gaining information on the detailed aspects of meiosis. As synapsis takes place, a three-layered proteinous structure called the synatonemal complex starts to form in the space between the homologous chromosomes. To be more precise, it begins to form along the paired chromosomes early in the prophase I of meiotic division. The mechanism that leads to precise point-by-point pairing between homologous chromocomes division. The mechamism that leads to precise point-by-point pairing between homologous chromosomes remains to be ascertained. Several items of information, however, suggest that chromsome alignment leading to synapsis may be mediated somehow by the nuclear membrane. Pachytene bivalents in eukaryotes are firmly attached to the inner niclear membrane at both termini. This attached begins with unpaired leptotene chromosomes that already have developed a lateral element. Once attached, the loptotene chromosomes begin to synapse. A number of different models have been proposed to account for genetic recombination via exchange between DNA strands following their breakage and subsequent reunion in new arrangement. One of the models accounting for molecular recombination leading to chromatid exchange and chiasma formation was first proposed in 1964 by Holliday, and 30 years later still a modified version of his model is favored. Nicks are made by endomuclease at corresponding sites on one strant of each DNA duplex in nonsister chromatid of a bivalent during prophase 1 of meiosis. The nicked strands loop-out and two strands reassociate into an exchanged arrangement, which is sealed by ligase. The remaining intact strand of each duplex is nicked at a site opposite the cross-over, and the exposed ends are digested by exonuclease action. Considerable progress has been made in recent years in the effort to define the molecular and organization features of the centromere region in the yeast chromosome. Centromere core region of the DNA duplex is flanked by 15 densely packed nucleosomes on ons side and by 3 packed nucleosomes on the other side, that is, 2000 bp on one side and 400 400 bp in the other side. All the telomeres of a given species share a common DNA sequence. Two ends of each chromosome are virtually identical. At the end of each chromosome there exist two kinds of DNA sequence" simple telpmeric sequences and telpmere-associated sequencies. Various studies of telomere replication, function, and behabior are now in progress, all greatly aided by molecular methods. During nuclear division in mitosis as well as in meiosis, the nucleili disappear by the time of metaphase and reappear during nuclear reorganizations in telophase. When telophase begins, small nucleoli form at the NOR of each nucleolar-organizing chromosome, enlarge, and fuse to form one or more large nucleoli. Nucleolus is a special structure attached top a specific nucleolar-organizing region located at a specific site of a particular chromosome. The nucleolus is a vertical factory for the synthesis of rRNAs and the assenbly of ribosome subunit precursors.sors.

  • PDF

Hydrogen Degradation of Pt/SBT/Si, Pt/SBT/Pt Ferroelectric Gate Structures and Degradation Resistance of Ir Gate Electrode (Pt/SBT/Si, Pt/SBT/Pt 강유전체 게이트 구조에서 수소 열화 현상 및 Ir 게이트 전극에 의한 열화 방지 방법)

  • 박전웅;김익수;김성일;김용태;성만영
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.10 no.2
    • /
    • pp.49-54
    • /
    • 2003
  • We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.

  • PDF

A Reconfigurable Memory Allocation Model for Real-Time Linux System (Real-Time Linux 시스템을 위한 재구성 가능한 메모리 할당 모델)

  • Sihm, Jae-Hong;Jung, Suk-Yong;Kang, Bong-Jik;Choi, Kyung-Hee;Jung, Gi-Hyun
    • The KIPS Transactions:PartA
    • /
    • v.8A no.3
    • /
    • pp.189-200
    • /
    • 2001
  • This paper proposes a memory allocation model for Real-Time Linux. The proposed model allows users to create several continuous memory regions in an application, to specify an appropriate region allocation policy for each memory region, and to request memory blocks from a necessary memory region. Instead of using single memory management module in order to support the proposed model, we adopt two-layered structure that is consisted of region allocators implementing allocation policies and a region manager controlling regions and region allocator modules. This structure separates allocation policy from allocation mechanism, thus allows system developers to implement same allocation policy using different algorithms in case of need. IN addition, it enables them to implement new allocation policy using different algorithms in case of need. In addition, it enables them to implement new allocation policy easily as long as they preserver predefined internal interfaces, to add the implemented policy into the system, and to remove unnecessary allocation policies from the system, Because the proposed model provides various allocation policies implemented previously, system builders can also reconfigure the system by just selecting most appropriate policies for a specific application without implementing these policies from scratch.

  • PDF

Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1998.02a
    • /
    • pp.120-120
    • /
    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

  • PDF

A Study on Predominant Periods and Attenuation Characteristics of Ground Motion (지반 탁월주기와 지반 운동특성에 관한 연구)

  • Kim, So-Gu;Cha, Jeong-Sik;Jeong, Hyeong-Sik
    • Geotechnical Engineering
    • /
    • v.11 no.2
    • /
    • pp.139-156
    • /
    • 1995
  • A set of field investigations was performed to estimate accurately the predominant periods of seismic 8round motions and the attenuation characteristics of the seismic ground vibration. Predominant periods of ground motions were estimated from the measurement of the continuous microseismic vibratins of certain periods, inherent in the ground and in the buildings, utilizing the high sensitivity digital velocity seismometer consisting of 3-component geophones and a digital seismograph. Estimated predominant periods of microseismic vibraion of the ground(measured on'the ground surface) and the building (measured on the second floor) were in the range of 0.18~0.235 sec. and 0.26~0.31 sec. respectively. The subsurface structure of the site ground was surveyed by the seismic refraction method utilizing the digital seismicwave probing system. The ground structure was found to be a two-layered system : an upper top soil layer of 7m in thickness with the P-wave velocity of 662m1sec and a lower layer of silty-clayey soils with the P -wave velocity of 2210m1 sec. The attenuation characteristics of the seismic ground vibrations were determined by the amplitude decay measurement method us;ng the Seisgun, which produces strong artificial seismic energy. Measured spatial attenuation coefficients of the ground vibration in vertical(Z) longitudinal(X), transverse(Y) direction were 0.1137, 0.0025, and 0.0290 respectively. Estimated Spartial QP's (inverse of the specific dissipation constant w.r.t. shear waved of X, Y, and Z directions were in the range of 5.913~7.575, 32.371~41.452, 2.794~3.579 re spectively. This indicates that aseimic design of the structures on the site should take stronger consideration regarding the earthquake resistance characteristics of the structures against longitudinal ground motion.

  • PDF

Design and Algorithm Implementation of a Distributed Information Retrieval System using Sequential Transferring Method(STM) (순차적 전달방식(STM)을 이용한 분산정보검색시스템의 설계 및 알고리즘 구현)

  • Yoon, Hee-Byung;Kim, Yong-Han;Kim, Hwa-Soo
    • The KIPS Transactions:PartB
    • /
    • v.11B no.5
    • /
    • pp.603-610
    • /
    • 2004
  • The distributed Information Retrieval System centrally controlled by mediator or meta search engine result in congestion of heavy traffic and int he problem of increment of cost for the reason of the design of complicated algorithm for central control and installation of hardware. So to figure out this problem, the way is needed that has independent retrieval functionality and can cooperate each other without dependency. In this paper, we overview a few works involved in distributed information retrieval system, then, implement algorithm and design the frame-work of distributed information retrieval system using sequential transferring method(STM) including multiple information retrieval system separated from central control. For this first of all, we present a web partition policy which devide and manage web logically and we present the sequential query processing way by means of illustration through changing numbered information retrieval system. Then, we also present 3-layered structure of framework and function and module of each layer suitable for information retrieval system. Last of ail, for effective implementation of STM algorithm we analysis module structure and present description of pseudocode of this, and show that the proposed STM algorithm works smoothly by demonstration of sequential query transfer process between servers.

Application of Geophysical Survey to the Geological Engineering Model for the Effective Detection in Foundation of Stone Relics (석조문화재 기초지반 파악을 위한 모형지반에서의 탐사기법 적용)

  • Kim, Man-Il;Lee, Chang-Joo;Kim, Jong-Tae;Kim, Ji-Soo;Kim, Sa-Dug;Jeong, Gyo-Cheol
    • The Journal of Engineering Geology
    • /
    • v.18 no.4
    • /
    • pp.537-543
    • /
    • 2008
  • To effectively delineate the foundation of stone relics by GPR and seismic refraction methods, a geological engineering model was constructed with alternating layer of soil and gravel to a depth of 3 m. This study was aimed at mapping the boundaries of model ground structure and interfaces of alternating layer using the various frequency antenna in GPR survey and seismic velocities. Compared to the resolution from the high frequency antenna, the image resolution from the survey using 100 Hz antenna is the lower, but with the deeper image coverage. On the contrast, the deeper structure was not mapped in the higher frequency data due to higher absorption effect, but the shallow layered zone was distinctively resolved. Therefore subsurface images were effectively provided by integrating the data with 100 MHz and 450 MHz antennas for the deep and shallow structures, respectively. Regarding the seismic refraction data, the boundaries of the model and interface of the alternating layers were not successfully mapped due to the limit of the survey length. However, the equivalent contours of low velocity extended deep as considerable velocity contrasts with surrounding ground.

Extracellular Polysaccharide Produced by a New Methylotrophic Isolate (새로운 메탄올 자화세균이 생산하는 세포외 다당류)

  • Lee, Ho J.;Kim, Si W.;Kim, Young M.
    • Korean Journal of Microbiology
    • /
    • v.34 no.4
    • /
    • pp.212-218
    • /
    • 1998
  • An obligately methylotrophic bacterium which produces extracellular polysaccharide (EPS) was isolated through methanol-enrichment culture technique. The isolate was aerobic, nonmotile, and gram negative rod and exibited catalase, but no oxidase, activity. Plasmid, carotenoid, and poly-${\beta}$-hydroxybutyric acid were not found. The guanine plus cytosine content of DNA was 52-56%. The isolate was found to grow only on methanol and monomethylamine. Growth was optimal ($t_d=2.4h$) at $35^{\circ}C$ and pH 6.5 in a mineral medium containing 0.5% (v/v) methanol, 25 mM phosphate, and 0.212% ammonium sulfate. Methanol was assimilated through the ribulose monophosphate pathway. Maximun amount of EPS was produced in cells growing at the mid-stationary growth phase at $30^{\circ}C$ in a mineral medium (PH 6.5) containing 1.0% (v/v) methanol in the CIN ratio of 54.7. Thin-layer chromatographic and high performance liquid chromatographic analysis revealed that the EPS was composed of glucose and galactose. EPS which was not treated with ethanol (Pbe) exhibited stable viscosity under various concentrations of salts and temperatures hut showed high viscosity at low pH. EPS precipitated with ethanol (Pae) was found to be more stable in viscosity than the Pbe at various salt concentrations, temperatures, and pH. The Pae also exhibited higher viscosity than the Pbe and xanthan gum. Scanning electron microscopy revealed that the lyophilized Pbe and Pae have a multi-layered structure and a structure of thick fibers, respectively.

  • PDF

Synthesis and Structure of the Layered Cathode Material $Li[Li_xMn_{1-x-y}Cr_y]O_2$ for Rechargeable Lithium Batteries (리튬2차전지용 양극 소재 $Li[Li_xMn_{1-x-y}Cr_y]O_2$의 합성 및 층상구조 연구)

  • 최진범;박종완;이승원
    • Journal of the Mineralogical Society of Korea
    • /
    • v.16 no.3
    • /
    • pp.223-232
    • /
    • 2003
  • The co-precipitation method is applied to synthesize the cathode material Li[L $i_{x}$M $n_{1-x-y}$C $r_{y}$ ] $O_2$ for lithium rechargeable batteries at $650^{\circ}C$ (CR650) and 8$50^{\circ}C$ (CR850), respectively. Rietveld indices indicate that $R_{wp}$ with respect to $R_{exp}$ ( $R_{wp}$/ $R_{exp}$) are 9.2%/10.1% for CR650 and 15.9%/9.76% for CR850, respectively. $R_{B}$ and S (GofF) shows 10.9%, 8.54% and 1.9, 1.6, respectively. Rietveld structure refinement reveals that layer structure of LiMn $O_2$ (R3m) coexists with lower symmetry of Li[L $i_{1}$3/M $n_{2}$3/] $O_2$ (C2/c) due to superlattice ordering of Li and Mn in metal-transition containing layers. Unit-cell parameters are calculated as a=2.8520(2)$\AA$, c=14.248(2)$\AA$, V=100.40(l)$\AA^3$ for CR650, and a=2.8504(1)$\AA$, c=14.2371(7)$\AA$, V=100.179(8)$\AA^3$ for CR850. Final chemistry is obtained as Li[L $i_{0.35}$M $n_{0.56}$C $r_{0.09}$] $O_2$ (CR650) and Li[L $i_{0.27}$M $n_{0.61}$C $r_{0.13}$] $O_2$ (CR850), respectively.y...y..vely.y...y..