• 보존과학연구
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• s.14
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• pp.45-76
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• 1993

Au-Cu alloyed coating layer were found by Hg-amalgam process and it seemed to be used Cu-amalgam process similar to Au-amalgam. Coated layer is dense and unique, Thickness of layer was 1.5 to $18.0\mum$ which had 95.3 to 99.8% purity of gold Matrix metal mostly cosists of forged copper alloy which had high purity and ferrite ($\alpha$) strusture. It showed excellent refining technical level at that time. Aowever, the nail, ferrous matrix used for strength needed, composed of silver foil packed and gold layer for adherence between ferrous matrix and gold layer

• Structural Engineering and Mechanics
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• v.69 no.1
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• pp.43-50
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• 2019

In this research, the effect of bedding layer on the tensile failure mechanism of rocks has been investigated using PFC2D. For this purpose, firstly calibration of PFC2d was performed using Brazilian tensile strength. Secondly Brazilian test was performed on the bedding layer. Thickness of layers were 5 mm, 10 mm and 20 mm. in each thickness layer, layer angles changes from $0^{\circ}$ to $90^{\circ}$ with increment of $15^{\circ}$. Totally, 21 model were simulated and tested by loading rate of 0.016 mm/s. The results show that when layer angle is less than 15, tensile cracks initiates between the layers and propagate till coalesce with model boundary. Its trace is too high. With increasing the layer angle, less layer mobilizes in failure process. Also, the failure trace is very short. It's to be noted that number of cracks decrease with increasing the layer thickness. Also, Brazilian tensile strength is minimum when bedding layer angle is between $45^{\circ}$ and $75^{\circ}$. The maximum one is related to layer angle of $90^{\circ}$.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• Smart Structures and Systems
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• v.4 no.5
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• pp.531-548
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• 2008

Recently, dense sensor instrumentation for structural health monitoring has motivated the need for novel passive wireless sensors that do not require a portable power source, such as batteries. Using a layer-by-layer self-assembly process, nano-structured multifunctional carbon nanotube-based thin film sensors of controlled morphology are fabricated. Through judicious selection of polyelectrolytic constituents, specific sensing transduction mechanisms can be encoded within these homogenous thin films. In this study, the thin films are specifically designed to change electrical properties to strain and pH stimulus. Validation of wireless communications is performed using traditional magnetic coil antennas of various turns for passive RFID (radio frequency identification) applications. Preliminary experimental results shown in this study have identified characteristic frequency and bandwidth changes in tandem with varying strain and pH, respectively. Finally, ongoing research is presented on the use of gold nanocolloids and carbon nanotubes during layer-by-layer assembly to fabricate highly conductive coil antennas for wireless communications.

• International Journal of CAD/CAM
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• v.12 no.1
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• pp.29-37
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• 2012

A new algorithm has been developed to construct surface from the contours having branches and the final smooth surface is obtained by the reversible Catmull-Clark subdivision. In branching, a particular layer has more than one contour that correspond with at least one contour at the adjacent layer. In the next step, three-dimensional composite curve is constructed from contours of a layer having correspondence with at least one contour at the adjacent layer by inserting points between them and joining the contours. The points are inserted in such a way that the geometric center of the contours should merge at the center of the contours at the adjacent layer. This process is repeated for all layers having branching problems. Polyhedra are constructed in the next step with the help of composite curves and the contours at adjacent layer. The required smooth surface is obtained in the proposed work by providing the level of smoothness.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.423-429
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• 2005

In this paper, we proposed the fabrication process of the stable e-beam evaporation and the patterning of metals layer on the polydimethylsiloxane (PDMS) substrate. The metal layer was deposited under the various deposition rate, and its effect to the electrical and mechanical properties (e.g.: adhesion-strength of metal layer) was investigated. The influence of surface roughness to the adhesion-strength was also examined via the tape test. Here, we varied the roughness by changing the reactive ion etching (RIE) duration. The electrode patterning was performed through the conventional photolithography and chemical etching process after e-beam deposition of $200{\AA}$ Ti and $1000{\AA}$ Au. As a result, the adhesion strength of metal layer on the PDMS surface was greatly improved by the oxygen plasma treatment. The e-beam evaporation on the PDMS surface is known to create the wavy topography. Here, we found that such wavy patterns do not effect to the electrical and mechanical properties. In conclusion, the metal patterns with minimum $20{\mu}m$ line width was produced well via the our fabrication process, and its electrical conductance was almost similar to the that of metal patterns on the silicon or glass substrates.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.5
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• pp.1001-1010
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• 2001

In TLM method, Discrete Green's function ABC have been used when improved the exactness of analyzing in wide frequency band. But this technology has a complicated process to apply absorbing boundary, which means it needs additional numerical analyzing process to obtain discrete Green's function data. so, In this paper, we propose new Green's absorbing layer for simple process to apply absorbing boundary. newly proposed Green's absorbing layer is produced by applying of loss operation, loading discrete Green's function with attenuation. A state of optimum absorbing would be obtained by relation between increasing rate of loss, attenuation constant and length of green's absorbing layer. and then Analysts of waveguide BPF is carried out using Green's absorbing layer within state of optimum absorbing, then this result is in corrective agreement with the result applying traditional discrete Green's function ABC.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Transactions of the Society of Information Storage Systems
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• v.2 no.3
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• pp.178-183
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• 2006

A Blu-ray disc, which has a more than 25GB optical capacity, has been known as a promising next-generation optical disc format. It commonly has a 1.1 mm thick substrate and a 0.1 mm thick cover layer for beam transmitting and the protection of the reflecting surface. The cover layer is generally formed by the spin coating process. However, in conventional spin coating, small bumps are formed along the rim of the disc, which results in the fatal reading error. Numerical simulation of the thin film flow behaviors during spin coating with the commercial solver and optimal spinning conditions was obtained. Thickness distribution of the cover layer according to the variation of substrate's edge shape could be calculated as well. By modifying the shape of the substrate edge shape, the bumps along the disc rim could be minimized, and it was proved that the chamfered edge, around $5{\sim}10$ degree, is the simplest and most effective way to minimize the bumps.