• 한국공작기계학회논문집
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• 제12권1호
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• pp.16-23
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• 2003

Keeping the layer thickness constant is very essential for improving the shape accuracy in the stereolithography process. The layer thickness is created by recoating process, and also affected by recoating parameters such as blade speed and thickness. The created layer in this process can determine the whole accuracy of the entire parts. The aim of this paper is to improve the accuracy of the layer thickness by adjusting the recoating process parameters. Several experiments with different recoating conditions are Performed to find the optimal recoating parameters that produce the most accurate layer thickness. The effective recoating method is suggested by measuring and analyzing the cured layer thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Journal of Welding and Joining
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• 제15권5호
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• pp.134-143
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• 1997

The formation of thick alloyed layer with high Si content have been investigated on the surface of Al alloy (A5083) plate by PTA process with Si powder. Hardening characteristics and wear resistance of alloyed layer was examined in relation to the microstructure of alloyed layer. Thick hardened layer in mm-order thickness on the surface of A5083 plate can be formed by PTA process with wide range of process condition by using Si powder as alloying element because of eutectic reaction of Al-Si binary alloy. High temperature and rapid solidification rate of molten pool, which are features of PTA process, enable the formation of high Si content alloyed layer with uniform distribution of fine primary Si paticle. High plasma arc current was beneficial to make the alloyed layer with smooth surface appearance in wide range of powder feeding rate, because enough volume of molten pool was necessary make alloyed layer. Uniform dispersion of fine primary Si particle with about 30${\mu}{\textrm}{m}$ in particle size can be obtained in layer with Si content ranging from 30 to 50 mass %. Hardness of alloyed layer increased with increasing Si content, but increasing rate of hardness differed with macrostructure of alloyed layer. Wear resistance of alloyed layer depended on $V_{si}$(volume fraction of primary Si) and was remarkably improved to two times of base metal at 20-30% $V_{si}$ without cracking, but no more improvement was obtained at larger $V_{si}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1630-1635
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• 2005

The microstructure of the parts made by the microcellular injection molding process influence properties, including impact strength, tensile strength and density of material. Microstructure of microcellular plastics is divided into core foaming region and solid skin region. Core foaming region is influenced by pressure drop rate, viscosity and cell coalescence. However, actual mechanism of the skin layers is not known despite its importance. The study on the skin layer is getting important because foaming rate of the plastics is determined by the thickness ratio of the skin layer. Especially in case of large molded part, control of the skin layer is needed because skin layer thickness is changed largely. Therefore it is necessary to study variation in skin layer thickness with processing parameters. In this paper, the influence of temperatures in the mold cavity on the skin layer s thickness was also addressed. In addition, the relationship between the temperature distributions across cavity of the mold with impact strength on parts made with the microcellular injection molding process was addressed. In addition, the method to predict the variation in skin layer thickness with mold temperature is discussed.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 마이크로전자및패키징학회지
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• 제18권1호
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• pp.23-27
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• 2011

전기화학적 에칭을 이용한 다공성 실리콘 이중층 형성은 초박형 태양전지 제작에서 PS layer transfer 기술을 적용하기 위한 선행 공정이다. 다공성 실리콘 층의 다공도는 전류밀도와 에칭용액 내 불산의 농도를 조절하여 제어할 수 있다. 전기화학적 에칭을 이용한 다공성 실리콘 형성을 위하여 비저항 $0.01-0.02\;{\Omega}{\cdot}cm$의 p-type (100)의 실리콘 웨이퍼를 사용하였으며, 에칭용액의 조성은 HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (volume)으로 고정하였다. PS layer transfer 기술에 사용되는 다공성 실리콘 이중층을 형성하기 위해서 에칭 도중 전류밀도를 낮은 전류밀도 조건에서 높은 전류밀도 조건으로 변환하여 low porosity layer 하부에 high porosity layer를 형성할 수 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.405-407
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• 2004

We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT