• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.97-100
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• 2000

Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• 한국세라믹학회지
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• 제40권2호
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• pp.198-205
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• 2003

R.F. Magnetron Sputtering법을 이용하여 Pt/Ti/ $SiO_2$/Si기판 위에 seed-layers와 $Ba_{0.66}$S $r_{0.34}$Ti $O_3$박막을 제조하였다. 다양한 기판온도에 따른 BST 박막의 전기적인 특성(정전용량과 누설전류)과 seed-layer층이 BST 박막에 미치는 영향을 조사하였다. BST 박막은 seed-layer층을 삽입함으로써 박막의 결정성이 향상되었고, 박막의 기판온도(결정화온도)도 상당히 낮출 수 있었다. 순수한 BST에 비하여 seed-layer를 삽입한 BST는 높은 유전상수와 낮은 유전손실 및 낮은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. BST 박막의 전기적 특성은 기판온도에 따라 영향을 받고, seed-layer에 의해 향상됨을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.187-188
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• 2000

The conventional firing process method for the transparent dielectric layer in PDP Technology has disadvantages of low through put, high power consumption and large process area. We propose the rapid thermal scinterring (RTS) method as new process method to overcome these disadvantage characteristics. As the experimental result of this method, the optic transmittance(wavelength : 600nm) rate of transparent dielectric layer was more improved than conventional furnaces under the optimized gas supplying. Further, it was certified this method had the best conditions on the firing process of the PDP transparent dielectric layer.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• 한국도로학회논문집
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• 제19권6호
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• pp.1-11
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• 2017

PURPOSES : The purpose of this study is to compare noise reduction quantities between before/after two-layer low noise pavement implementation using equivalent noise level analysis and to analyze the noise reduction effects of the two layer low noise pavement with a statistical method such as the Anderson-Darling Test. METHODS : In order to compare and to analyze noise reduction effects between before/after two-layer low noise pavement implementation, data acquisition as noise levels on a roadside and an apartment rooftop was conducted in the study area. The equivalent noise level was estimated in order to compare noise reduction quantities and the Anderson-Darling Test was carried out for estimating noise reduction effects of the two-layer low noise pavement. RESULTS : The equivalent noise levels of before/after two-layer low noise pavement implementation for the roadside during the daytime are 65.355 dB and 63.520 dB and during the nighttime are 62.463 dB and 59.088 dB. The equivalent noise levels for the apartment rooftop during daytime are 57.301 dB and 59.088 dB and during the nighttime are 54.616 dB and 52.464 dB. Also two-layer low noise pavement decreased the noise reduction effects estimated with the statistical method as the Anderson-Darling test for the roadside during the daytime by around 66.68% and decreased noise reduction effects on the roadside during the nighttime by 0.70%. Moreover it reduced noise reduction effects in the apartment rooftop during the daytime and nighttime by 0% and 96.32%, respectively. CONCLUSIONS : Based on the result of this study, two-layer low noise pavement can positively affect noise reduction during both the daytime and nighttime according to the results of estimating the equivalent noise levels and the Anderson-Darling test.

• 멤브레인
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• 제29권3호
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• pp.140-146
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• 2019

본 연구에서는 다공성 Polyacrylonitrile (PAN) 중공사막을 지지체막으로 하여 Poly styrene sulfonic acid (PSSA)와 polyethyleneimine (PEI)을 이용하여 layer-by-layer법으로 선택층을 형성시켰다. 코팅용액에 Mg염을 첨가하여 염석법(salting out method)을 이용하였다. 코팅용액의 이온세기, 고분자 농도, 코팅시간 등을 달리하여 나노여과막을 제조하였으며 NaCl, $MgCl_2$, $CaSO_4$ 100 mg/L를 공급액으로 하여 2 atm의 구동 압력에서 투과도와 염 배제율을 평가하였다. PSSA 20,000 ppm, 코팅시간 3분, 이온세기 1.0, PEI 30,000 ppm, 코팅시간 1분, 이온세기 0.1의 조건으로 코팅한 막이 가장 우수한 성능을 보여 주었다. 100 ppm의 NaCl, $MgCl_2$, $CaSO_4$ 공급액에서 각각 20.4, 19.4, 18.7 LMH의 투과도와 67, 90, 66.6%의 염 배제율을 나타내었다.

• Carbon letters
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• 제14권4호
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• pp.247-250
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• 2013

In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.

• Coupled systems mechanics
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• 제7권1호
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• pp.95-109
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• 2018

The relevance of turbulent mixing in estuarine numerical models for stratified two-layer shallow water flows is analysed in this paper. A one-dimensional numerical model was developed for this purpose by extending an immiscible two-layer model with an additional source term, which accounts for turbulent mixing effects, namely the entrainment of fluid from the lower to the upper layer. The entrainment rate is quantified by an empirical equation as a function of the bulk Richardson number. A finite volume method based on an approximated Roe solver was used to solve the governing coupled system of partial differential equations. A comparison of numerical results with and without entrainment is presented to illustrate the influence of entrainment on both the salt-water intrusion length and lower layer dynamics. Furthermore, one example is given to demonstrate how entrainment terms may help to stabilize the numerical scheme and prevent a possible loss of hyperbolicity. Finally, the model with entrainment is validated by comparing the numerical results to field measurements.

• 한국의류학회지
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• 제27권7호
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.