• Title/Summary/Keyword: layer deposition

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Aerosol Deposition and Behavior on Leaves in Cool-temperate Deciduous Forests. Part 3: Estimation of Fog Deposition onto Cool-temperate Deciduous Forest by the Inferential Method

  • Katata, Genki;Yamaguchi, Takashi;Sato, Haruna;Watanabe, Yoko;Noguchi, Izumi;Hara, Hiroshi;Nagai, Haruyasu
    • Asian Journal of Atmospheric Environment
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    • v.7 no.1
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    • pp.17-24
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    • 2013
  • Fog deposition onto the cool-temperate deciduous forest around Lake Mashu in northern Japan was estimated by the inferential method using the parameterizations of deposition velocity and liquid water content of fog (LWC). Two parameterizations of fog deposition velocity derived from field experiments in Europe and numerical simulations using a detailed multi-layer atmosphere-vegetation-soil model were tested. The empirical function between horizontal visibility (VIS) and LWC was applied to produce hourly LWC as an input data for the inferential method. Weekly mean LWC computed from VIS had a good correlation with LWC sampled by an active string-fog collector. By considering the enhancement of fog deposition due to the edge effect, fog deposition calculated by the inferential method using two parameterizations of deposition velocity agreed with that computed from throughfall data. The results indicated that the inferential method using the current parameterizations of deposition velocity and LWC can provide a rough estimation of water input due to fog deposition onto cool-temperature deciduous forests. Limitations of current parameterizations of deposition velocity related to wind speed, evaporation loss of rain and fog droplets intercepted by tree canopies, and leaf area index were discussed.

Performance of Thin Film Transistors Having an As-Deposited Polycrystalline Silicon Channel Layer

  • Hong, Wan-Shick;Cho, Hyun-Joon;Kim, Tae-Hwan;Lee, Kyung-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1266-1269
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    • 2007
  • Polycrystalline silicon (poly-Si) films were prepared directly on plastic substrates at a low (< $200^{\circ}C$) by using Catalytic Chemical Vapor Deposition (Cat-CVD) technique without subsequent annealing steps. Surface roughness of the poly-Si layer and the density of the gate dielectric layer were found to be influential to the TFT performance.

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Developments of Transparent ac-PDPs

  • Choi, Hak-Nyun;Lee, Seog-Young;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1621-1624
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    • 2008
  • Transparent ac-PDP test panel was prepared via a combination of materials including ITO sustaining electrodes, thin film dielectric layer and nano-sized phosphor powders. The thin film dielectric layer was prepared by E-beam evaporation process and phosphor layer was deposited on metal mesh pattern by electrophoretic deposition process. The optical transmittance and luminance of the panel indicated that full color transparent ac-PDP is feasible with the approach.

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Effects of structure of Organic Bi-stable Device on the memory characteristics (유기쌍안정소자의 구조가 메모리특성에 미치는 영향)

  • Lee, Jae-June;Kong, Sang-Bok;Hwang, Sung-Beom;Song, Chung-Kun
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.483-484
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    • 2006
  • In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.

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Dielectric Thin Film Using Atmospheric Pressure Plasma Polymerization

  • Choi, Sung-Lan;Kim, Hong-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1444-1446
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    • 2009
  • The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

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Co-Deposition법을 이용한 Yb Silicide/Si Contact 및 특성 향상에 관한 연구

  • Gang, Jun-Gu;Na, Se-Gwon;Choe, Ju-Yun;Lee, Seok-Hui;Kim, Hyeong-Seop;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.438-439
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    • 2013
  • Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

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High aspect ratio wrinkled patterns on polymers by glancing angle deposition

  • Ko, Tae-Jun;Ahmed, Sk. Faruque;Lee, Kwang-Ryeol;Oh, Kyu-Hwan;Moon, Myoung-Woon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.335-335
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    • 2011
  • Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

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Deformable Liposomes for Topical Skin Delivery of Arbutin

  • Bian, Shengjie;Choi, Min-Koo;Lin, Hongxia;Zheng, Junmin;Chung, Suk-Jae;Shim, Chang-Koo;Kim, Dae-Duk
    • Journal of Pharmaceutical Investigation
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    • v.36 no.5
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    • pp.299-304
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    • 2006
  • The aim of this study was to investigate the effect of deformable liposomes with sodium cholate on the skin permeation and skin deposition of arbutin, a hydrophilic skin-whitening agent. Various compositions of liposomes were prepared by the extrusion method. Particle size distribution and entrapment efficiency were determined by the laser light scattering and the gel permeation chromatography, respectively. The in vitro rat skin permeation and deposition of arbutin in various skin layers were investigated using the Keshary-Chien diffusion cells at $37^{\circ}C$. The average particle size of the deformable liposomes ranged from 217.4 to 117.4 nm, depending on the composition. The entrapment efficiency was dependent on surfactant concentration and loading dose of arbutin. The permeation rate of 5% arbutin in deformable liposomes was $8.91({\pm}1.33){\mu}g/cm^2/h$, and was not significantly different from 5% arbutin aqueous solution $[9.82({\m}0.86){\mu}g/cm^2/h]$. The deposition of arbutin was $43.34({\pm}12.13)$ and $16.99({\pm}7.83){\mu}g/cm^2$ in stratum corneum layer and epidermis/dermis layer, respectively, after 12 h of permeation study. These results are consistent with several earlier studies for the localization effect of liposomal formulations in stratum corneum, and demonstrated the feasibility of the deformable liposomes as a promising carrier for the skin deposition of hydrophilic skin-whitening compounds.

Growth and characterization of oxide buffer layer on IBAD_MgO template for HTS coated conductors (박막형 고온초전도 선재를 위한 산화물 완충층의 IBAD_MgO 기판에서의 성장과 특성)

  • Ko, Rock-Kil;Jang, Se-Hoon;Ha, Hong-Soo;Kim, Ho-Sup;Song, Kyu-Jeong;Ha, Dong-Woo;Oh, Sang-Soo;Park, Chan;Moon, Seung-Hyun;Kim, Young-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.297-297
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    • 2008
  • Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

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