• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.652-661
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• 2008

Reduction of NOx in emission gas, improvement of engine efficiency, and extension of warranty period has made demands for developing materials more corrosively resistant to the inner-muffler environments or predicting the lifetime of materials used in muffler more precisely. The corrosion inside muffler has been explained with condensate corrosion mainly though thermal oxidation experiences prior to condensate corrosion. Hence, the aim of this study is to describe how the thermal oxidation affects the corrosion of stainless steel exposed to the inner-muffler environments. Auger electron spectroscopy and electrochemical tests were employed to analyze oxide scale and to evaluate corrosion resistance, respectively. Thermal oxidation has different role of condensate corrosion depending on the temperature: inhibiting condensate corrosion below $380^{\circ}C$ and enhancing condensate corrosion above $380^{\circ}C$. The low temperature oxidation causes to form compact oxide layer functioning a barrier for penetrating condensate into a matrix. Although though thermal oxidation caused chromium-depleted layer between oxide layer and matrix, the enhancement of the condensate corrosion in high temperature oxidation resulted from corrosion-induced crevice formed by oxide scale rather than corrosion in chromium-depleted layer. It was proved by aids of anodic polarization tests and measurements of pitting corrosion potentials. By the study, the role of high temperature oxidation layer affecting the condensate corrosion of stainless steels used as muffler materials was well understood.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.212-212
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• 2003

Many of the spin valve multilayer structures with FeMn as antiferromagnetic layer consist of a NiFe/FeMn/NiFe trilayer where the bottom NiFe layer is the seed layer to facilitate the growth of (111) gama-FeMn antiferromagnetic phase and the top NiFe layer forms the pinned layer[1], In this study, exchange bias of bottom NiFe layer has been investigated as functions of thicknesses of top and bottom NiFe in NiFe/FeMn/NiFe, prepared by rf magnetron sputtering, MH-loop was measured by vibration sample magnetometer (VSM). Two hysteresis loops are corresponded to bottom and top layers, similar to reported loops in spin valve structure. Exchange bias of bottom NiFe could be induced by the interfacial coupling between bottom NiFe and FeMn. But those coupling are strongly dependent on the top and bottom NiFe thicknesses, revealing anomalous character ul exchange bias of bottom NiFe layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of Aquaculture
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• v.10 no.2
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• pp.105-112
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• 1997

For improvement of fishermen's income by oyster cultivation in eastern coast of Korea, the spats of oyster (Crassostrea gigas) collected from Hadong in southern coast of Korea were transplanted to Chumunjin and cultured by hanging long line method from August 1994 to July 1995 for examination of their growth and ground environmental conditions. The environmental conditions show the annual range of water temperature as 8.33~$25.62^{\circ}C$, salinity as 32.84~$34.28\textperthousand$, PO4-P as 0.09~0.40$\mu$g-at/1, dissolived inorganic nitrogen (DIN) as 0.32~3.21$\mu$g-at/1. The growth of oyster in hanging culture was as follows : 88.7mm (shell hight) in upper layer (7m), 84.9mm in middle layer (10m) and 78.0mm in lower layer (13m) after one-year cultivation. Thus, the oysters in upper layer had grown relatively faster than those in lower layer. The relationships between shell hight (SH) and shell length (SL) in each culturing depth as follows : SL=0.5403 SH+8.5486 (r=0.9959) in upper layer, SL=0.5813 SH+3.7775 (r=0.9869) in middle layer, and SL=0.5159 SH+6.8736 (r=0.9961) in lower layer. The meat weight of oyster was the highest value as 13.24g in upper layer, and 12.68g in middle layer, and lowest as 10.96g in lower layer. The relationships between total wight (TW) and meat weight (MW) with culturing water layer were as follows : MW=0.1933 TW+0.1051 (r=0.0073) in upper layer, MW=0.1915 TW+0.1894 (r=0.9984) in middle layer, and MW=0.1650 TW+0.0558 (r=0.9983) in lower layer.

• Journal of Powder Materials
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• v.21 no.4
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• pp.260-265
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• 2014

In this study, in order to increase surface ability of hardness and corrosion of magnesium alloy, anodizing and sealing with nano-diamond powder was conducted. A porous oxide layer on the magnesium alloy was successfully made at $85^{\circ}C$ through anodizing. It was found to be significantly more difficult to make a porous oxide layer in the magnesium alloy compared to an aluminum alloy. The oxide layer made below $73^{\circ}C$ by anodizing had no porous layer. The electrolyte used in this study is DOW 17 solution. The surface morphology of the magnesium oxide layer was investigated by a scanning electron microscope. The pores made by anodizing were sealed by water and aqueous nano-diamond powder respectively. The hardness and corrosion resistance of the magnesium alloy was increased by the anodizing and sealing treatment with nano-diamond powder.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.333-336
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• 2006

A new forming method for metal/ other metal two-layer tubes by multi-billet extrusion (MBE) is introduced. The forming possibilities of two-layer tubes CDA 365(inner)/Al 1100(outer) and Al 2014(inner)/Al 1100(outer) by MBE are investigated according to the given frictional condition and die profile. The results show that two-layer tube composed by two types tube as abovementioned can be manufactured by MBE. Some stated variables in the forming process such as effective stress and normalized pressure at welding surface are analyzed by FEM code ($DEFORM^{TM}$-3D)