• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.1
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• pp.59-65
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• 2008

In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.371-380
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• 2004

In the dust separation by using porous filter media, the structure of dust layer deposited on the filter surface of filter medium directly affects the effective filtration. The present study has investigated the specific resistance (K$_2$') of the dust layer and its porosity ($\varepsilon$$_{c}$) for three different filters; FA composite filter, metal fiber filter and stainless filter. The specific resistance (K$_2$') increased and at the same time the cake porosity ($\varepsilon$$_{c}$) decreased with the increase of filtration velocity, possibly due to the compressible effect of dust layer. However, under the low dust concentration, subsequent dust particles would block the open channels through the layer resulting in high specific resistance of the layer. The FA composite filter among three filters was shown to be the most effective filter for dust cake filtration at low filtration velocities less than 0.1 m/s for an approximate dust concentration of 5 g/㎥.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.315-317
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• 2000

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

• Journal of the Korean institute of surface engineering
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• v.29 no.4
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• pp.261-267
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• 1996

The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.153-160
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• 2011

The AISI 216L stainless steel with a composition of Fe-16Cr-6Ni-6Mn-1.7Mo (wt.%) was oxidized at $700{\sim}900^{\circ}C$ in air for 100 h. At $700^{\circ}C$, a thin $Mn_{1.5}Cr_{1.5}O_4$ oxide layer with a thickness of $0.4{\mu}m$ formed. At $800^{\circ}C$, an outer thin $Fe_2O_3$ oxide layer and a thick inner $FeCr_2O_4$ oxide layer with a total thickness of $30{\mu}m$ formed. The non-adherent scale formed at $800^{\circ}C$ was susceptible to cracking. At $900^{\circ}C$, an outer thin $Fe_2O_3$ oxide layer and a thick inner $Mn_{1.5}Cr_{1.5}O_4$ oxide layer formed, whose total thickness was $10{\sim}15{\mu}m$. The scales formed at $900^{\circ}C$ were non-adherent and susceptible to cracking. 216 L stainless steel oxidized faster than 316 L stainless steel, owing to the increment of the Mn content and the decrement of Ni content.

• Clinics in Shoulder and Elbow
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• v.25 no.2
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• pp.93-100
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• 2022

Background: Subscapularis tendon insertion at the first facet has separate layers (deep and superficial). The purpose of this study is to evaluate postoperative clinical outcomes and radiological healing according to each layer of detachment in the first facet involving subscapularis tendon tear. Methods: Eighty-three patients who underwent arthroscopic repair due to First facet involving the scapularis tendon tear accompanying small to medium sized posterosuperior cuff tear were classified into three groups (group A: deep layer partial detachment, group B: deep layer complete detachment, but no superficial layer detachment, and group C: deep layer and superficial layer complete detachment). Subscapularis tendon healing was evaluated using computed tomography arthrogram and clinical result was evaluated using American Shoulder and Elbow Surgeons (ASES) shoulder score, Constant score and University of California Los Angeles (UCLA) shoulder score. Results: Retear rate of the subscapularis tendon was 2.2%, 18.2%, and 33.3% in group A, group B, and group C, respectively. These rates showed statistically significant difference among the three groups, which were classified by deep and superficial layer detachment in the first facet (p=0.003). Group A showed significant difference in subscapularis tendon healing compared with group B and group C (p=0.018 and p<0.001, respectively), but there was no statistical difference between group B and group C (p=0.292). Regarding clinical outcomes, there was no significant difference among three groups in ASES and UCLA score at final follow-up (p=0.070 and p=0.106, respectively). Conclusions: Complete detachment of deep layer may be related with retear occurrence regardless with detachment of superficial layer, but clinical outcome may not be related with each layer detachment in the first facet involving subscapularis tendon tear.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.1-5
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• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.