• Journal of the Korea Institute of Information Security & Cryptology
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• v.32 no.5
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• pp.765-777
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• 2022

The SABER algorithm, a PKE/KEM algorithm presented in NIST PQC Standardization Round 3, is an algorithm based on the Module-LWR problem among lattice-based problems and has a Meta-PKE structure. At this time, the secret information used in the encryption process is called a ephemeral key, and in this paper, the ephemeral key reuse attack using the Meta-PKE structure is described. For each parameter satisfying the security strengths required by NIST, we present a detailed analysis of the previous studies attacked using 4, 6, and 6 queries, and improve them, using only 3, 4, and 4 queries. In addition, we introduce how to reduce the computational complexity of recovering ephemeral keys with a single query from the brute-force complexity on the n-dimension lattice, 2^7.91×n, 2^10.51×n, 2^12.22×n to 2^4.91×n, 2^6.5×n, 2^6.22×n, for each parameter, and present the results and limitations.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.27-38
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• 2012

In this paper, we introduce CoMP in 3GPP LTE-Advanced Release 11 to take care of shadowing effects appearing in cell-edge areas to meet rapidly increasing demand for high speed transmission and multi-media data. In order to mitigate interference, orthogonalizing is ideal but it is slightly difficult to be applied to real systems. Therefore, interference alignment and avoidance are used in practical applications. Interference alignment is a scheme enabling us to consider interference our friend not enemy. We show lattice codes in Gaussian channel achieve Shannon capacity where strong interference exists. In addition, we show the relationship between channel parameter a and DoF(Degree of Freedom) applying lattice codes to interference alignment for interference channel with three users.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.288-297
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• 1994

In this study, lattice parameter, binding energy and microstructures of TiC layer according to the addition of Fe, Cr were investigated in the reactive deposition coating. From the results, the lattice parameters of the TiC layers by using ferro-titanium as a precursor were 4.329~4.339A but the lattice parameters of the TiC layers formed by ferro-titanium and ferro-chromium decreased to 4.316~4.330A. The hardness of the former's was HV(100g) 3,000~3,400kg/mm and the hardness of the latter's was HV (100g) 3,800~3,900. But, regardless of Cr and Fe, the binding energy of TiC layers were 454.75 eV for $Ti2p_{3/2}$ and were 281.85 eV for Cls. Meanwhile, the TiC layers were densified by addition of Fe, Cr and internal defects were reduced Therefore. it can be concluded that the remarkable hardness increment was obtained by the improvement of microstructures of TiC rather than the increase of bond strength or Peierls stress.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.1
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• pp.414-430
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• 2016

Verifier-local revocation (VLR) seems to be the most flexible revocation approaches for any group signature scheme, because it just only requires the verifiers to possess some up-to-date revocation information, but not the signers. Langlois et al. (PKC 2014) proposed the first VLR group signature based on lattice assumptions in the random oracle model. Their scheme has at least Õ(n²) ⋅ log N bit group public key and Õ(n) ⋅ log N bit signature, respectively. Here, n is the security parameter and N is the maximum number of group members. In this paper, we present a simpler lattice-based VLR group signature, which is more efficient by a O(log N) factor in both the group public key and the signature size. The security of our VLR group signature can be reduced to the hardness of learning with errors (LWE) and small integer solution (SIS) in the random oracle model.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.2-5
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• 2008

This study describes the numerical simulation of three-dimensional droplet formation and the following motion in a cross-junction microchannel by using the Lattice Boltzmann Method (LBM). Our aim is to develop the three-dimensional binary fluids model, consisting of two sets of distribution functions to represent the total fluid density and the density difference, which introduces the repulsive interaction consistent with a free-energy function between two fluids. We validated the LBM code with the velocity profile in a 3-dimensional rectangular channel. Then, we applied our code to the numerical simulation of a binary fluid flow in a cross-junction channel focusing on the investigation of the droplet formulation. Due to the pressure and interfacial-tension effect, one component of the fluids which is injected from one inlet is cut off into many droplets periodically by the other component which is injected from the other inlets. We considered the effect of the boundary conditions for density difference (order parameter) on the wetting of the droplet to the side walls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Applied Microscopy
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• v.27 no.1
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• pp.101-109
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• 1997

The nonstoichiometric ordering of Mg and Nb cations in undoped and La-doped lead magnesium niobate solid solutions has been investigated by means of high-resolution transmission electron microscopy and computer image simulation. High-resolution lattice images were obtained under various microscope imaging conditions and objective apertures. Computer image simulations were performed for a wide range of sample thickness, defocusing value, and long-range order parameter. The simulated images revealed that the lattice images of the ordered regions were predominantly dependent on the long-range order parameter. From the comparisons of the experimental and simulated images for the ordered regions, the long-range order parameter approximately ranged 0.2 to 0 7. It was also found that the ordered structure has a $(NH_4)_3-FeF_6$ structure, which consists of alternating Mg- and Nb-preferred sublattices along the (111) directions.

• Journal of the Korean Chemical Society
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• v.56 no.2
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• pp.207-211
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• 2012

Using Carnahan-Starling equation for hard spheres and a lattice model with an attractive potential, a new twoparameter equation of state for pure gases is derived. Using this equation, compressibility factors are calculated and compared with Nelson-Obert generalized compressibility factor charts. The results show that the agreement of this equation with the experimental Nelson-Obert charts is similar to that of Redlich-Kwong equation in the average. But parameters and terms of the new equation have physical meanings which are more definite than those of Redlich-Kwong equation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.204-209
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• 2016

The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.