• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.1-5
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• 2014

We calculated the resonance tunneling energy band in the BCS gap for Type-II superconductor in which periodic potential is generated by external magnetic flux. In this model, penetrating magnetic flux was assumed to be in a fixed lattice state which is not moving by an external force. We observed the existence of two subbands when we used the same parameters as for the $Nd_{1.85}Ce_{0.15}CuO_X$ thin film experiment. The voltages at which the regions of negative differential resistivity (NDR) started after the resonant tunneling ended were in a good agreement with the experimental data in the field region of 1 T - 2.2 T, but not in the high field regions. Discrepancy occurred in the high field region is considered to be caused by that the potential barrier could not be maintained because the current induced by resonant tunneling exceeds the superconducting critical current. In order to have better agreement in the low field region, more concrete designing of the potential rather than a simple square well used in the calculation might be needed. Based on this result, we can predict an occurrence of the electromagnetic radiation of as much difference of energy caused by the 2nd order resonant tunneling in which electrons transit from the 2nd band to the 1st band in the potential wells.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.4
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• pp.203-207
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• 2011

LED is in the spotlight as next generation's lighting due to the fact that it has good efficiency on converting electricity to light and has long life time. Recently it expands the scope up to taillight of car, signal lamp and indoor light. Additionally it can send data information simultaneously with lighting, which is called lighting-communication convergence. In this paper, the channel characteristics of LED wireless communication is studied in the condition that indoor is latticed with 1mm span and photons started from LED are firstly arrived at each lattice after that these move as straight line before meeting photodiode(PD).

• Smart Structures and Systems
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• v.17 no.1
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• pp.135-147
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• 2016

This paper describes a smart structural system, which uses smart materials for real-time monitoring and active control of bolted-joints in steel structures. The goal of this research is to reduce the possibility of failure and the cost of maintenance of steel structures such as bridges, electricity pylons, steel lattice towers and so on. The concept of the smart structural system combines impedance based health monitoring techniques with a shape memory alloy (SMA) washer to restore the tension of the loosened bolt. The impedance-based structural health monitoring (SHM) techniques were used to detect loosened bolts in bolted-joints. By comparing electrical impedance signatures measured from a potentially damage structure with baseline data obtained from the pristine structure, the bolt loosening damage could be detected. An outlier analysis, using generalized extreme value (GEV) distribution, providing optimal decision boundaries, has been carried out for more systematic damage detection. Once the loosening damage was detected in the bolted joint, the external heater, which was bonded to the SMA washer, actuated the washer. Then, the heated SMA washer expanded axially and adjusted the bolt tension to restore the lost torque. Additionally, temperature variation due to the heater was compensated by applying the effective frequency shift (EFS) algorithm to improve the performance of the diagnostic results. An experimental study was conducted by integrating the piezoelectric material based structural health monitoring and the SMA-based active control function on a bolted joint, after which the performance of the smart 'self-monitoring and self-healing bolted joint system' was demonstrated.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.18-22
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• 2000

In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.344-348
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• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.2-244.2
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• 2013

Contact Pattern을 Plasma Etching을 통해 Pattering 공정을 진행함에 있어서 Plasma 내에 존재하는 High Energy Ion 들의 Bombardment 에 의해, Contact Bottom 의 Silicon Lattice Atom 들은 Physical 한 Damage를 받아 Electron 의 흐름을 방해하게 되어, Resistance를 증가시키게 된다. 또한 Etchant 로 사용되는 Fluorine 과 Chlorine Atom 들은, Contact Bottom 에 Contamination 으로 작용하게 되어, 후속 Contact 공정을 진행하면서 증착되는 Ti 나 Co Layer 와 Si 이 반응하는 것을 방해하여 Ohmic Contact을 형성하기 위한 Silicide Layer를 형성하지 못하도록 만든다. High Aspect Ratio Contact (HARC) Etching 을 진행하면서 Contact Profile을 Vertical 하게 형성하기 위하여 Bias Power를 증가하여 사용하게 되는데, 이로부터 Contact Bottom에서 발생하는 Etchant 로 인한 Damage 는 더욱 더 증가하게 된다. 이 Damage Layer를 추가적인 Secondary Damage 없이 제거하기 위하여 본 연구에서는 원자층 식각방법(Atomic Layer Etching Technique)을 사용하였다. 실험에 사용된 원자층 식각방법을 이용하여, Damage 가 발생한 Si Layer를 Secondary Damage 없이 효과적으로 Control 하여 제거할 수 있음을 확인하였으며, 30 nm Deep Contact Bottom 에서 Damage 가 제거될 수 있음을 확인하였다. XPS 와 Depth SIMS Data를 이용하여 상기 실험 결과를 확인하였으며, SEM Profile 분석을 통하여, Damage 제거 결과 및 Profile 변화 여부를 확인하였으며, 4 Point Prove 결과를 통하여 결과적으로 Resistance 가 개선되는 결과를 얻을 수 있었다.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.174-178
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• 2017

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.

• Transactions of Materials Processing
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• v.25 no.6
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• pp.359-365
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• 2016

The rate-controlling mechanisms for time-dependent plastic deformation of eutectoid and hyper-eutectoid pearlitic steels at low $T/T_m$ temperatures were explored. The strain rate - stress data obtained from a series of constant load tensile tests at $0.25{\sim}0.30T/T_m$ were applied to the power law, the lattice friction controlled plasticity, and the obstacle controlled plasticity. Of these models, the obstacle controlled plasticity was found to best-describe the rate-controlling mechanism for time-dependent plastic deformation of two steels at low $T/T_m$ temperatures in terms of the activation energy for overcoming the obstacles against dislocation glide in ferrite. The deformed microstructures revealed the dislocation forests of a high density as the main obstacles. In addition, the obstacle controlled plasticity well-explained the effects of cementite on the $0^{\circ}K$ flow stress of two steels.

• Journal of the Korean institute of surface engineering
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• v.46 no.5
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• pp.192-196
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• 2013

Stainless steels (AISI 316L) are carburized by Inductively coupled plasma using $CH_4$ and Ar gas. The ${\gamma}_c$ phase(S-phase) is formed on the surface of stainless steel after carburizing process. The XRD peak of carburized samples is shifted to lower diffracting angle due to lattice expansion. Overall, the thickness of ${\gamma}_c$ phase showed a linear dependence with respect to increasing temperature due to the faster rate of diffusion of carbon. However, at temperatures above 500, the thickness data deviated from the linear trend. It is expected that the deviation was caused from atomic diffusion as well as other reactions that occurred at high temperatures. The interfacial contact resistance (ICR) and corrosion resistance are measured in a simulated proton exchange membrane fuel cell (PEMFC) environment. The ICR value of the carburized samples decreased from 130 $m{\Omega}cm^2$ (AISI 316L) to about 20 $m{\Omega}cm^2$. The sample carburized at 200 showed the best corrosion current density (6 ${\mu}Acm^{-2}$).

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.