• KSCE Journal of Civil and Environmental Engineering Research
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• v.35 no.5
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• pp.1165-1171
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• 2015

Due to the increasing trend of operation and maintenance cost (O&M cost) of infrastructure, the accurate estimation of O&M cost is crucial part to the government. Recent literatures pointed out that gradual climate changes such as average temperature changes, average precipitation changes, and etc. have significant impact on infrastructure O&M cost. This research is intended to develop a long-term O&M cost prediction model of road facilities by considering the impacts of average temperature changes. For this end, the climate change scenarios of Intergovernmental Panel on Climate Change (IPCC)'s $5^{th}$ report are adopted to structure the impact of average temperature changes by using binomial lattice model. The proposed framework is expected to regional government in supporting decisions for road O&M cost.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.521-524
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• 2009

This study describes aerodynamic noise of high speed wind turbine system, which is invented as a new concept in order to reduce the torque of main shaft, for design parameters of the rotor blade. For parametric study of high speed rotor aerodynamic noise, Unsteady Vortex Lattice Method with Nonlinear Vortex Correction Method is used for analysis of wind turbine blade aerodynamic and Farassat1A and Semi-Empirical are used for low frequency noise and airfoil self noise. Parameters are chord length, twist and rotational speed for this parametric research. In the low frequency range, the change of noise is predicted the same level as each parameters varies. However, in case of broadband noise of blade, the change of rotational speed makes more variation of noise than other parameters. When the geometric angles of attack are fixed, as the rotational speed is increased by 5RPM, the noise level is increased by 4dB.

• Journal of Powder Materials
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• v.12 no.3
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• pp.174-178
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• 2005

This paper deals with the fabrication of titanium carbide using fine titanium hydride. The ratio of $TiH_2$ and C (Activated carbon) was 1:1 (mol) and milled in a planetary ball mill at a ball-to-powder weight ratio of 20:1. Thereafter, TGA was performed at $1400^{\circ}C$ to observe change of weight with milling time. Titanium carbide was obtained by using tempering the milled powders at $1100-1500^{\circ}C$. The microstructures of titanium carbide as well as the change of the lattice parameters and particle size have been studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

• Journal of Powder Materials
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• v.6 no.1
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• pp.27-35
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• 1999

A study was made on the fabrication of nanostructured Fe-Co powders by mechanical alloying and their magnetic properties. Microstrural development during the process of MA was inverstigated by means of X-ray diffraction, differential thermal analyzer, scanning electron microscopy and transmission electron microscopy. The magnetic properties of NS Fe-Co powders were evaluated through the measurements of the saturation magnetization $(M_s)$ as well as the coercivity $(H_c)$. The average grain size calculated from line braodening in XRD peak was about 10nm or less and confirmed by TEM. In this experiment, two different milling methods (cycle opertion and conventional milling) were used. Cycle operation had an advantage over the conventional milling method in that more refined powders can be obtained. Solid state alloying of the components was confirmed from both the change of the saturation magnetization and the change of lattice parameter with Co contentration. Maxium $M_s$ was obtained at the composition of 30at.%Co. Relatively high coercivities of 10~150e were obtained for the compositions investigated, and this seems to be due to the high amount of internal strain introduced during milling.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.20-29
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• 1996

Sr0.6Ca0.4CuO2 single crystal has been synthesized by flux method and characterized by the single crystal X-ray diffraction. The compound has the orthorhombic system and the space group is Cmcm(63), lattice parameters are a=3.4645Å, b=16.1417Å, c=3.8727Å. In the (Sr1-xCax)CuO2 compound the limit of Ca from substitution for Sr was determined by the change of bond length. For this, X-ray diffraction, scanning electron microscopy (SEM), energy dispersive X-ray fluorescence (EDAX) and electron probe micro-analysis (EPMA) were used. From the change of Cu-O bond length as the Ca substitution, we concluded the limit of Ca incorporation Xca≒0.73.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.223-229
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• 2006

Methanol and formaldehyde were produced directly by the partial oxidation of methane over mixed oxide catalysts. The catalysts were composed of Mo and Bi with late-transition metals, such as Mn, Fe, and Co. The reaction was carried out at $450^{\circ}C$, 50 bar in a fixed-bed differential reactor. The prepared catalysts were characterized by $O_2-TPD$ and BET apparatus. Among the catalysts used, the catalyst composed of 1:1:2.5 molar ratio of Mo:Bi:Mn showed the best methane conversion and methanol selectivity. The change in ratio of methane to oxygen affected at the conversion and selectivity, and the most proper ratio was 10:1.5. Methane conversion, methanol and formaldehyde selectivities increased with the surface areas of the catalysts. From the $O_2-TPD$ result, it was found that the oxygen species responsible for this reaction might be the lattice oxygen species desorbed at high temperature around $800^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.206-212
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• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.589-593
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• 2002

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.