• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• 한국세라믹학회지
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• 제41권1호
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• pp.36-40
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• 2004

RF 마그네트론 스퍼터링법을 이용하여 $SnO_2$ 박막을 증착하여 열처리 분위기에 따른 미세구조 및 표면상태 변화를 살펴보고 그에 따른 전기적 특성의 변화를 고찰하였다. 후속 열처리는 $500^{\circ}C$에서 공기와 질소 분위기하에서 수행되었으며, 미세구조 및 표면상태를 살펴보기 위하여 SEM, AFM과 XPS 측정을 실시하였다. 공기중에서 열처리된 경우에는 증착 초기상태와 유의차가 크지 않은 반면 질소 분위기에서 열처리한 후에는 미세구조와 표면의 화학적 상태의 변화가 크게 발생하였다. 이러한 결과는 상대적으로 낮은 산소 분압하에서 열처리 과정에서 흡착 산소의 탈착 및 격자산호의 유출에 기인하는 것으로 판단된다. 또한, 질소 분위기하에서의 열처리 후에 비저항이 열처리 전에 비하여 5배 이상 증가하였다. 이로부터 전하 전송자인 전자 농도의 증가에 비하여 미세구조의 변화에 따른 불연속적인 전도경로가 더 크게 영향을 미치는 것을 알 수 있다.

• 한국통신학회논문지
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• 제23권8호
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• pp.1998-2009
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• 1998

본 논문에서는 배경의 움직임이 유발되는 능동 CCD 카메라를 통하여 실시간으로 포착되는 영상 데이터를 대상으로 카메라의 사전 설치 정보나 좌표 보정(calibration) 없이 강체(rigid body) 혹은 비 강체(non-rigid body)의 움직이는 물체를 추출하고 이의 이동 방향을 판단하여, 추적하는 효율적인 알고리즘을 제안한다. 이동 물체의 영역분할을 위하여 동체의 형태를 규정하는 특징 점을 추출하고, 시간에 따른 특징 점의 이동 벡터로 구성된 특정 플로우 필드(feature flow field)를 구한 후 이들을 다차원 특정 공간상에서 군집화(clustering)함으로써 동체를 추출한다. 제안하는 IRMAS(lncremenatal Rotational Minimum Angle Search)에 의하여 군집화된 특정점들의 볼록 다각형(convex hull)올 구함으로써 이동 물체의 개괄적인 외곽 형태를 재 구성한다. 또한, 이동 궤적의 갑작스러운 변화를 가져올 수 있는 동작 특성을 가지는 이동 물체의 효과적인 추적을 목적으로 개선된 선형 예측기를 사용하였다. 이동 궤적 예측기는 기존의 선형 예측기의 차수를 이동의 변화도에 따라 적응적으로 조정함으로써 예측 오차를 감소시켜, 빠른 속도로 이동 궤적에 수렴한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• 한국재료학회지
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• 제11권3호
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• pp.191-196
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• 2001

사파이어 (0001) 기판의 활성화 이온빔 (RIB) 처리 후 MOCVD에서 성장한 GaN박막의 열처리를 통한 구조 변화를 살펴보고, 전기적 성질의 변화를 관찰하기 위하여 전기로를 이용하여 열처리를 하였다. 시편의 분석을 위하여 DCXRD, Hall, TEM을 사용하였다. 100$0^{\circ}C$에서 시간을 변화시키면서 열처리한 시편에서 DCXRD의 FWHM는 약 50 arc-sec 정도 감소하였고, Hall 이동도는 약 80$\textrm{cm}^2$/V.sec 정도 향상되었다. 가장 좋은 Hall 이동도를 보인 처리된 시편과 처리 전 시편의 TEM 비교 관찰에서 전위 밀도는 56~69% 정도 감소하였고 격자의 변형도 줄어들었다. 이것은 결정의 질과 전기적 성질 사이의 상관관계를 암시하며, 기판의 RIB 처리와 성장 후 적절한 열처리의 조합이 MOCVD로 성장시킨 GaN 박막의 특성을 개선시키는 것을 명확하게 보여준다.

• 한국재료학회지
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• 제11권6호
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• pp.483-491
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• 2001

냉간가공된 Zr 합금을 $575^{\circ}C$에서 $650^{\circ}C$의 온도범위에서 유지시간을 달리하여 열처리하는 동안에 발생하는 회복 및 재결정 거동을 TEP(ThermoElectric Power)와 미소경도 분석을 통하여 연구하였다. 냉간가공과 열처리에 따른 합금의 회복 및 재결정온 격자결함, 공공, 전위, 적층결함 등이 소멸함에 따라 TEP가 증가하는 거동을 보였다. 이러한 TEP 분석은 미소경도 분석에 비해 재결정의 완료를 정확하게 예측할 수 있었으며, 특히, Zr-0.4Nb-xSn합금에서는 미소경도 분석으로 쉽게 구분하기 어려운 회복 및 재결정 단계를 명확하게 나타내었다. TBP와 미소경도 분석을 이용한 Zr-base합금의 재결정 거동에 따르면, Sn을 첨가하는 경우에 Sn이 치환형 고용체로 존재하기 때문에 이로 인한 응력장과 전위와의 상호작용에 기인하여 회복이 지연되는 현상을 가져왔으며, Nb함량을 증가시키는 경우에는 재결정 지연 효과가 미미하였으나, 석출물 형성에 의한 결정립 성장의 지연효과가 크게 나타났다.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.44-49
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• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.

• 한국세라믹학회지
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• 제37권4호
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• pp.395-401
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• 2000

In this study, we chose the basic composition which indicated the best electrical properties by change of x content(0, 0.05, 0.1, 0.15, 0.2, 0.25 mol respectively) in xPb(Mn1/3Sb2/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 ceramics. And we substituted Cd2+ for Pb2+ site, then observed the sintering behavior, microstructure and electrical propertties according to the various sintering temperature. The basic composition was the 0.05PMS-0.95PZt, and it showed single perovskite phase and excellent properties. In case of Cd2+ substitution, we were able to sinter at 90$0^{\circ}C$ which was lower than conventional sintering temperature(1200~130$0^{\circ}C$). Especially, when the 2mol% substituted PMS-PZT specimens were sintered at 90$0^{\circ}C$ for 2h, we obtained the p=7.6g/㎤, kp=56%, Qm=520 and made sure of a position of Cd2+ substitution by observing lattice parameter, phase transition temperature. From this results, we could infer that because Cd2+ substituted fro A-site, low temperature sintering of Cd2+ substituted PMS-PZT without any loss of electrical properties shows its applicability for the piezoelectric ceramic transformer.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1099-1107
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• 1998

In this study, the microstructure and electric conductivity of 5mol% $Gd_2O_3$-5mol% $Y_2O_3-ZrO_2$ system(5G5YZ) with a variation of sintering time at $1600^{\circ}C$ were investigated. By the result of TEM analysis of 5G5YZ sintered for 12h, a microcrack was observed near grain boundary. The change of the sintering time did not affect the lattice conductivity, but the grain boundary contribution was varied with the sintering time. The grain boundary conductivity of the sample sintered for 1h showed the highest value. Furthermore, the activation energy of the total conductivity was independent upon the sintering time and showed approximately 1.01eV. The highest conductivity measured at $1000^{\circ}C$ was 0.0197S/cm with the sample sintered for 1h. Comparing to 0h’s, the thickness ration of grain boundary as a function of sintering time were 0.88, 1.11 and 1.29 for 1h, 5h and 12h, respectively. In case of the sample sintered for 1h, the thickness of the grain boundary showed the lowest value. The increase of the sintering time over 1h made the decrease of the electric conductivity as well as the increase of the grain growth and the thickness of the grain boundary. As a result, it seemed that the proper sintering time for 5G5YZ composition was 1h.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.642-647
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• 2015

The perovskite solid solutions of the $Sr_{1-x}Mg_xFe{^{3+}}_{1-{\tau}}Fe{^{4+}}_{\tau}O_{3-y}$ system (x=0.0, 0.1, 0.2, and 0.3) were synthesized in $N_2$ at $1,150^{\circ}C$. X-ray powder diffraction study assured that all the four samples had cubic symmetries(SM-0: $3.865{\AA}$, SM-1: $3.849{\AA}$, SM-2: $3.833{\AA}$, and SM-3: $3.820{\AA}$) and that the lattice volumes decreased steadily from $57.7{\AA}^3$ to $55.7{\AA}^3$ with x values. The nonstoichiometric chemical formulas were determined by Mohr salt analysis and with the increase of x values the amounts of $Fe^{4+}$ ion and oxygen were decreased simultaneously. Thermal analysis showed that SM-0 started to lose its oxygen at $450^{\circ}C$ and SM-1, Sm-2, and SM-3 began to lose their oxygen at around $350{\sim}400^{\circ}C$. SM-0 showed almost reversible weight change in the cooling process. All the samples exhibited semiconducting behaviors in the temperature range of $10{\sim}400^{\circ}C$. Conductivities of the 4 samples were decreased in the order of SM-0, SM-1, SM-2, and SM-3 at constant temperature. The activation energies of the conductions were in the range of 0.176 eV~0.244 eV.