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http://dx.doi.org/10.4191/KCERS.2004.41.1.036

Effects of Annealing Atmosphere on the Characteristics of Tin Oxide Films Prepared by RF-magnetron Sputtering  

Choi, Gwang-Pyo (Research Institute of Energy Resources Technology, Chosun University)
Park, Yong-Ju (Research Institute of Energy Resources Technology, Chosun University)
Ryu, Hyun-Wook (Research Institute of Energy Resources Technology, Chosun University)
Noh, Whyo-Sup (Department of Advanced Materials Engineering, Chosun University)
Kwon, Yong (Department of Advanced Materials Engineering, Chosun University)
Park, Jin-Seong (Department of Advanced Materials Engineering, Chosun University)
Publication Information
Journal of the Korean Ceramic Society / v.41, no.1, 2004 , pp. 36-40 More about this Journal
Abstract
$SnO_2$ thin films were deposited on a $SiO_2$/Si substrate with the flow of Ar and $O_2$ of 25 sccm by RF-magnetron sputtering method. the post-annealing was conducted at $500^{\circ}C$ in atmosphere of dry air and $N_2$ were changed fairly, while those annealed in dry air resembled as-deposited films. This may be attributed to the desorption of adsorbed oxygen and the extraction of lattice oxygen during annealing. Resistivity of films annealed in $N_2$ was increased over 5 times than that of as-deposited films. It can be explained that the increment of resistivity may result from the discontinuous conduction path with change of microstructures after annealing in $N_2$.
Keywords
Thin films; Tin dioxide; Annealing; XPS;
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Times Cited By KSCI : 1  (Citation Analysis)
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