• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.605-606
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• 2009

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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• pp.68-69
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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• pp.114-115
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 하계학술발표회 논문집
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• pp.417-418
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• 2006

• 한국정밀공학회지
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• 제23권9호
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• pp.164-173
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• 2006

The cooling capacity of a micro-heat pipe is mainly governed by the magnitude of capillary pressure induced in the wick structure. For microchannel wicks, a higher capillary pressure is achievable for narrower and deeper channels. In this study, a metallic micro-heat pipe adopting high-aspect-ratio microchannel wicks is fabricated. Micromachining of high-aspect-ratio microchannels is done using the laser-induced wet etching technique in which a focused laser beam irradiates the workpiece placed in a liquid etchant along a desired channel pattern. Because of the direct writing characteristic of the laser-induced wet etching method, no mask is necessary and the fabrication procedure is relatively simple. Deep microchannels of an aspect ratio close to 10 can be readily fabricated with little heat damage of the workpiece. The laser-induced wet etching process for the fabrication of high-aspect-ratio microchannels in 0.5mm thick stainless steel foil is presented in detail. The shape and size variations of microchannels with respect to the process variables, such as laser power, scanning speed, number of scans, and etchant concentration are closely examined. Also, the fabrication of a flat micro-heat pipe based on the high-aspect-ratio microchannels is demonstrated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1444-1446
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• 1998

Direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films using a focused argon ion laser beam($\lambda$ =514.5nm) on a glass. The thickness and linewidth of the deposited copper films were considered as a function of laser power and scan speed. As the result from AES, there are no other elements except for copper after decomposition in the atmospheric ambient.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.58-62
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• 2019

Diffractive Optical Elements(DOEs) diffracts incident light using the diffraction phenomenon of light to generate a desired diffraction image. In recent years, the use of diffraction optics, which can replace existing refractive optical elements with flat plates, has been increased by implementing various optical functions that could not be implemented in refractive optical devices and by becoming miniaturized and compacted optical elements. Direct laser lithography is typically used to effectively fabrication such a diffractive optical element in a large area with a low process cost. In this study, the process conditions for fabricating patterns of diffractive optical elements in various shapes were found using direct laser lithographic system, and optical performance evaluation was performed through fabrication.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• 한국융합학회논문지
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• 제11권7호
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• pp.157-162
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• 2020

최근 레이저를 이용하여 환원된 친환경 그래핀 패턴 기술(Laser Induced Graphene, LIG)은 간단하고 효율적으로 원하는 형태로 다양한 기판 위에 패터닝하는 것이 가능하여 신축 유연 전자 소자, 박막 형태의 에너지 저장 소자 등과 같이 새로운 친환경 전자 소자 제작에 많이 활용되고 있다. 이러한 그래핀 패턴 구조를 이용한 전자 소자의 성능과 효용성을 높이기 위해서는 그래핀 고유의 2차원 특성을 유지하면서 가능한 최소한의 선폭을 구현할 수 있는 최적화된 레이저 패터닝 조건에 대한 연구가 필수적이다. 본 논문에서는 최근 레이저 그래핀 패턴 연구에서 많이 사용되는 Ti:sapphire 펨토초 레이저를 이용해서 그래핀 광-열 산화반응을 분석하여 최적화된 그래핀의 최소선폭을 구현하였다. 레이저 에너지의 확산 효과를 최소화하기 위하여 레이저 광강도와 레이저 스캔 속도를 조절하여 최적의 그래핀 특성을 나타내는 패턴을 연구하였으며 18 ㎛의 집속된 빔을 이용하여 최소 30 ㎛의 이차원 그래핀 선폭을 구현하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.