• 소성∙가공
• /
• 제13권3호
• /
• pp.285-289
• /
• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.918-920
• /
• 2006

Metal sulfide powders such as MnS, $MoS_2$ and FeS are simply used to the machinery processing improvement agent and solid lubricant in powder metallurgy industrial. And then, metal sulfide powders have received relatively little attention from powder metallurgy. Recently, the portable machine is one of the important interfaces between human or human and electronic machine. With the increase of the intelligent activity, the social and industrial demands for information display device and power source are increasing. The transition metal sulfide materials (FeS, ZnS) have received considerable attention due to the large variety of its electric, optical and magnetic properties. Among the metal sulfide, $FeS_2$ is appealing superior material for applications in $Li-2^{nd}$ battery because of high capacity. ZnS is also a famous phosphor material with various luminescence properties, such as photoluminescence (PL) and electroluminescence (EL). So generally used in the fields of display, sensors and laser. Metal sulfide materials, therefore, are provided for most widely application in all industries. In recent years, material researchers have become increasingly interested in studying with synthesis of metal sulfide.

• 마이크로전자및패키징학회지
• /
• 제28권1호
• /
• pp.1-12
• /
• 2021

본 논문에서는 레이저 유도에 의한 그래핀 합성 기술 및 이를 이용한 전기/전자 소자 제조 기술과 다양한 소자 제조 기술을 검토하였다. 최근까지 개발되고 있는 3차원 그래핀 구조 활용으로 설계된 마이크로/나노 패턴화는 효율적인 제조공정으로 인하여 많은 각광을 받고 있으며, 차세대 기판 소재로의 응용까지 다양하게 개발되고 있다. 산업에서 요구하는 실제적인 적용 연구의 예들은, 레이저의 파장대역 선택, 출력 조정 및 광 간섭 기술 응용 등의 점진적인 해결방안 논의를 통해 큰 발전 가능성을 보여주고 있다. 기존의 그래핀의 전기/전자 소자 장치로의 응용 확장성은 이미 검증된 바 있으며, 새로운 합성 방식 및 기판 적용 기술은 마이크로 패키징 기술과의 통합 운용으로, 바이오센서, 슈퍼커패시터, 다공성 전기화학 센서 등 응용분야가 매우 다양하다. 본 논문에서 소개하는 레이저 기반 그래핀 가공 기술은 가까운 미래에 휴대형 소형 전자기기 및 전자 소자에 쉽게 적용 가능하리라 사료된다.

• 한국재료학회지
• /
• 제20권5호
• /
• pp.257-261
• /
• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 한국주조공학회지
• /
• 제39권6호
• /
• pp.103-109
• /
• 2019

Cu-added SKD11 was manufactured through the casting process and the effects of Cu addition with different contents (0, 1, 2 and 3 wt%) and aging treatment on microstructure, mechanical characteristics such as tensile strength and hardness, and thermal conductivity were investigated. The microstructure was analyzed by FE-SEM and XRD, the mechanical characteristics by Rockwell hardness tester and Tensile tester, and the thermal conductivity by Laser flash. As a result, SKD11 containing Cu had higher hardness than as-received SKD11. The hardness of as-cast SKD11 containing 1 wt% Cu was 42.4 HRC, whereas the hardness of asreceived SKD11 cast alloy was 19.5 HRC, indicating that the hardness was greatly improved when Cu was added. In the case of tensile strength, Cu-added SKD11 cast alloy had lower tensile strength than as-received SKD11, and the tensile strength tended to increase as Cu content increased. After heat treatment, however, tensile strength of as-received SKD11 was significantly increased, whereas in the case of Cu-added SKD11, as the Cu contents increased, the tensile strength increased less and even reduced at 3 wt% Cu. The thermal conductivity of Cu-added SKD11 cast alloy was about 13 W m^-1 K^-1, which was lower than that of the asreceived SKD11 cast alloy (28 W m^-1 K^-1). After the heat treatment, however, the thermal conductivity of as-received SKD11 was reduced, while the thermal conductivity of the SKD11 added with Cu was increased. Thermal conductivity was generally larger with less Cu content, and this tendency became more pronounced after heat treatment.

• 자원리싸이클링
• /
• 제27권1호
• /
• pp.84-91
• /
• 2018

본 연구에서는 레이저유도 플라즈마 분광법(Laser induced breakdown spectroscopy, LIBS) 기반의 금속 종류별 스펙트럼 데이터를 이용하여 연성정보(soft information)를 추정하고 최빈 클래스로 분류하는(most probable classification) 금속 분류 방법을 제안한다. 폐금속 자원과 같이 사전 정보가 없는 금속을 분류하는 경우 몇 가지 핵심 구성성분에 대한 정량 분석을 통해서 클래스를 추정하는 방법이 효율적이다. 이에 따라 부분 집합 기반의 부분최소제곱회귀법(Partial Least Square Regression, PLSR)을 이용하여 LIBS 검출 스펙트럼으로부터 각 성분의 농도를 독립적으로 신뢰성 있게 추정하고, 인증 표준물질(CRM) 등 알려진 모집합의 농도정보에 기반하여 최고 확률을 갖도록 분류하는 기술을 제안한다. 샘플 스펙트럼들의 다변량 분석을 통해서 여러 성분의 추정 농도를 다변량 정규 분포를 갖는 것으로 가정하고 통합(Joint) 추정 연성정보를 구할 수 있으며, 이를 활용한 최빈 확률 검출이나 추가적인 사전 정보의 결합 등을 통해서 분류 성능을 향상시킬 수 있다. 제안된 기술의 평가를 위해서 9가지 종류의 CRM 금속시료의 LIBS 스펙트럼 데이터를 사용하며, 부분 집합 기반의 PLSR 농도 추정 기술을 기반으로 단변량 혹은 다변량 정규 분포 연성 정보추정을 통해 미지 금속의 검출과 연성 정보의 검출 등을 테스트 하였다. 또한 방사형 차트(Radar chart)를 이용하여 추정된 농도와 획득한 연성정보를 효과적으로 시각화함으로써 기존 라이브러리에 포함된 부분 집합의 금속과 비교하여 해당 금속과의 유사성을 그래프를 통해 추정할 수 있다.

• 소성∙가공
• /
• 제15권1호
• /
• pp.3-8
• /
• 2006

The demand fer small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased by using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable fur mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-replication process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the surface profiles of master, mold and molded pattern were measured by optical scanning profiler. The geometrical deviation between the master and the molded DOE was less than $0.1{\mu}m$. The diffraction efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

• 한국추진공학회:학술대회논문집
• /
• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
• /
• pp.849-855
• /
• 2017

우주 발사체의 운반능력을 향상시키기 위하여 고성능 다단연소사이클 엔진의 개발은 필수적이다. 그 중 연소기 헤드는 기체산화제의 유입을 위해 콘 형상으로 되어 있으며, 매니폴드는 매우 복잡한 구조를 가지고 있다. 이러한 헤드는 주조 방식이나 기계가공으로 제작되어 왔다. 기계가공의 한계나 주조재질의 특성과 재료의 한계성을 탈피하여 복잡하고 가공이 어려운 연소기 헤드의 제작 공정을 3D 금속 프린팅 공정을 이용하여 개선하는 기술을 확보하고자 한다. 현재 3D 금속 프린팅을 이용하여 주연소기에 사용할 수 있는 소재의 물성을 파악하고 프린팅 제작조건의 변화를 주는 공정개발을 통하여 더욱 낳은 물성을 확보하고, 이를 바탕으로 연소기 헤드를 제작하고, 접합공정을 개발하여 연소시험을 통해 그 성능을 입증하고 제작공정을 확립하고자 한다.

• 소성∙가공
• /
• 제28권1호
• /
• pp.43-48
• /
• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• 한국광학회지
• /
• 제20권4호
• /
• pp.230-235
• /
• 2009

광고분자 필름은 홀로그램을 저장하기 위한 기술로서, 광굴절 결정보다 고감도, 간단한 실시간 처리, 저렴한 가격 등의 장점으로 홀로그래픽 저장기술 응용에 보다 손쉽게 적용할 수 있다. 본 연구에서는 기존의 PVA/AA계 광고분자 필름에 광학적 활성을 가지는 $SeO_2$를 첨가한 광고분자 필름을 제조하였다. 홀로그램을 저장하기 위한 기록매질로서 최적의 회절효율을 가지는 광고분자 필름을 만들기 위하여, 광감각제인 Eosin Y의 농도와 광고분자 필름의 두께를 달리하여 실험하였다. 광고분자 필름의 회절효율은 532 nm 레이저로, $40^{\circ}$의 입사각에서 측정하였다. 실험 결과, Eosin Y의 농도가 0.0045 g이고, 필름 두께가 $297{\mu}m$일 때, 78.70%로 가장 높은 회절효율 값을 나타내었다.