• 한국생산제조학회지
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• 제21권1호
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• pp.116-122
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• 2012

The purpose of this study is on the development of 3-D conductive pattern fabrication system using laser. For development 3-D direct patterning system, we used the dynamic focusing, the laser power stabilizer and the auto aligning techniques. These technologies are already used commercially. However operation and control integrated system for 3-D direct patterning are not yet developed. The objective of this paper is to introduce laser direct structuring and develop the operating and integration system. Also we implemented new application of laser direct structuring.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.395-396
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• 2008

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.499-500
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• 2013

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.133-136
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• 2010

Laser direct patterning is one of new methods which are able to replace a conventional photolithography. In order reduce the fabrication cost and to improve the luminous efficiency of AC plasma display panels (PDPs), in this experiment, a Q-switched Nd:$YVO_4$ laser was used to fabricate T-shaped indium tin oxide (ITO) display electrodes. For the laser beam scanning speed from 100 mm/sec to 800 mm/sec, T-shaped ITO patterns were clearly obtained and investigated. The experimental results showed that the optimized T-shaped ITO electrode was obtained when the lasers scanning speed was 300 mm/s.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• 전기학회논문지P
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• 제65권3호
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• pp.224-234
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• 2016

This study developed the conductivity pattern of solid surface using laser direct pattern and compound polymer material technology. For development direct patterning system of solid surface, we used the laser power stabilizer, the dynamic focusing, 3D scanner S/W and the auto aligning techniques. Also For conductivity pattern, we are developed compound polymer material with additive by electro-less plating. These technologies are already used commercially. However operation and control integrated system for direct patterning of solid surface are not yet developed. The objective of this paper is to introduce the laser direct structuring for simple process improvement instead complex PCB process, and develop the operating stability and integration system. Also we implemented new application of laser direct structuring through sample manufacture.

• 한국레이저가공학회지
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• 제3권2호
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• 제3권1호
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.369-372
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• 2004

Photo-induced surface alignment is charming as a non-contact photo-patternable alignment technology which can be used in the next generation of displays, such as large area, multi-domain. For decades, many polymer film have been investigated and developed to be used in the photo alignment. Among these photoreactive materials, recently developed polyimide, Chloromethylated Polyimide(CMPI) now became the focus of interests in this area because of its high photosensitivity and superior thermal stability. In this report, we present micro patterning method to form the nanoscale structure by Mask-Less laser patterning using this CMPI film and NSOM probe.