• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.327-329
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• 2006

In this paper, the cutting qualities by laser dicing and fracture strength of a silicon die is investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bend test and is compared with the die strength by mechanical sawing. As a results, die strength by laser dicing shows a decrease of 50% in compared with die strength by mechanical sawing.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.251-254
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• 2006

In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

• 제어로봇시스템학회논문지
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• 제8권5호
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.91-101
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• 2017

최근 레이저를 이용하여 전자 소자 및 모듈을 절단하기 위한 많은 연구가 진행되고 있다. 본 연구에서는 레이저를 이용하여 LED 모듈을 초고속 절단하기 위한 기초 연구를 수행하였다. 특히 기존의 다이싱(dicing) saw의 절단 속도를 훨씬 능가하는 100 mm/s의 초고속 레이저 절단의 가능성을 검토하였다. 이를 위하여 LED 모듈의 구성 재료인 copper/ceramic 및 silicone/ceramic 이종 복합 기판을 제작하여 레이저 절단 후, 절단면의 표면 특성, 표면조도, 굽힘 강도를 다이싱 saw를 이용하여 절단한 샘플과 비교하였다. 복합 기판에 대한 최적의 레이저 절단 조건을 찾기 위하여, 세라믹 및 구리 단일 기판의 레이저 절단을 통하여 다양한 레이저 공정 조건들에 대한 영향 검토하였다. 절단면의 표면 특성이 가장 좋은 최적의 레이저 절단 조건은 Ar 보조 가스의 사용, 높은 레이저 파워 및 높은 보조 가스의 압력이었다. Copper/ceramic 및 silicone/ceramic 이종 복합 기판에 대하여 레이저 절단과 다이싱 saw로 절단한 기판의 절단면을 비교한 결과, 레이저로 절단된 기판이 다이싱 saw 절단에 비하여 표면이 거칠고 표면 특성이 약간 나쁘다. 레이저 절단면의 평균 표면조도는 약 $9{\mu}m$ 이며, 다이싱 saw로 절단된 절단면의 표면조도는 약 $4{\mu}m$ 이었다. 그러나 다이싱 절단의 절단 속도(3 mm/s)를 고려하면 레이저 절단면의 표면 morphology가 비교적 균일하고, 표면조도도 다이싱 절단의 경우와 큰 차이가 없기 때문에 어느 정도 만족할 만한 결과를 얻었다고 판단된다. 또한 레이저 절단된 기판의 굽힘 강도가 다이싱으로 절단된 기판의 굽힘 강도보다 동등하거나 약간 열세이었다. 그러나 향후 레이저의 절단 조건이 좀 더 최적화된다면 LED 모듈의 초고속 레이저 절단이 가능할 것으로 판단된다.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.63-68
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• 2014

For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.1519-1520
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• 2011

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.39-40
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• 2011

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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• pp.478-480
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• 2004

다이아몬드 톱날을 이용한 얇은 Si 웨이퍼의 기계적인 다이싱은 chipping, crack 등의 문제점을 발생시킨다. 또한 stacked die 나 multi-chip등과 같은 3D-WLP(wafer level package)에서 via를 생성하기 위해 현재 사용되는 화학적 etching은 공정속도가 느리고 제어가 힘들며, 공정이 복잡하다는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해 현재 연구되고 있는 분야가 레이저를 이용한 웨이퍼 다이싱 및 드릴링이다. 본 논문에서는 UV 레이저를 이용한 얇은 Si 웨이퍼 다이싱 및 드릴링 시스템에 대해 소개하고, 웨이퍼 다이싱 및 드릴링 실험결과를 바탕으로 적절한 레이저 및 공정 매개변수에 대해 설명한다.

• 한국공작기계학회논문집
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• 제17권3호
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• pp.53-58
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• 2008

This study was conducted to evaluate the flatness of the porous type of dicing chuck. Two measurement systems for a vacuum chuck with a porous type of ceramic plate were prepared using a digital indicator and a laser interferometer. 6 inch of silicon and glass wafer were also used. Vacuum pressure from 100mmHg to 700mmHg by 100mmHg was increased. From experiments, chucked-wafer flatness was converged to the dicing chuck flatness itself even though the repeatability of contact method using indicator was unstable. Finally, the chuck flatness was estimated below $2{\mu}m$ with peak-to valley value.