• 대한전자공학회논문지SD
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• 제39권8호
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• pp.1-11
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• 2002

다전극 DFB-LD는 외부에서 주입되는 광의 파워에 따라서 발진하는 광출력이 쌍안정성을 보임에 따라, 이를 파장 변환에 활용하거나, 광논리 소자로 활용할 수 있는 가능성이 있다. 본 논문에서는 연산자 분리 시영역 모델을 이용하여 다전극 DFB-LD에서의 광 쌍안정 특성에 대하여 연구하였다. 다전극 DFB-LD에 불균등하게 전류를 인가하여 쌍안정 현상이 발생함을 확인하고, 흡수 영역으로 입력광을 입사하였을 때 발생하는 출력광 파워의 쌍안정 현상도 확인하였다. 그리고 수 ns의 스위칭 시간과 수 pj의 스위칭 에너지를 가진 set 또는 reset 광 펄스의 인가에 의하여 flip-flop 특성을 보임에 따라 광 메모리 소자로서의 동작도 확인하였다. 또한 캐리어 생존시간과 이득 곡선 기울기 등의 조절로서 LD 광 출력의 반응 시간을 줄일 수 있는 가능성을 확인하였다.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• 한국기계가공학회지
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• 제11권6호
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• pp.130-138
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• 2012

There are increasing demands from the industry for intelligent robot-calibration solutions, which can be tightly integrated to the manufacturing process. A proposed solution can simplify conventional robot-calibration and teaching methods without tedious procedures and lengthy training time. iGPS(Indoor GPS) system is a laser based real-time dynamic tracking/measurement system. The key element is acquiring and reporting three-dimensional(3D) information, which can be accomplished as an integrated system or as manual contact based measurements by a user. A 3D probe is introduced as the user holds the probe in his hand and moves the probe tip over the object. The X, Y, and Z coordinates of the probe tip are measured in real-time with high accuracy. In this paper, a new approach of robot-calibration and teaching system is introduced by implementing a 3D measurement system for measuring and tracking an object with motions in up to six degrees of freedom. The general concept and kinematics of the metrology system as well as the derivations of an error budget for the general device are described. Several experimental results of geometry and its related error identification for an easy compensation / teaching method on an industrial robot will also be included.

• 한국광학회지
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• 제18권2호
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• pp.149-154
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• 2007

저가의 소자 개발이 가능한 나노임프린팅 공정을 도입하여 510 nm 주기의 브래그 격자 구조를 가지는 폴리머 광도파로 소자를 제작하였다. 폴리머 격자 광소자의 온도 의존성을 감소시키기 위한 방법으로 플라스틱 박막으로 이루어진 유연성 기판상에 브래그 격자를 제작하는 것이 필요하다. 임프린팅 공정을 손쉽게 수행하기 위한 광도파로 구조를 채택하였으며, 코아와 클래딩의 굴절률이 각각 1.540, 1.430인 폴리머를 이용하여 코아 두께가 $3{\mu}m$인 단일모드 광도파로 구조를 얻을 수 있었다. 유연성 기판 브래그 격자 광도파로 소자의 특성을 Si기판 브래그 격자 광도파로 소자와 비교하여 관측한 결과, 유연성 기판 도입에 따른 브래그 반사 소자의 성능 저하는 나타나지 않았다.

• 해양환경안전학회지
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• 제20권2호
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• pp.202-209
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• 2014

본 연구에서는 단거리 영역 내에서 대상물표의 정확한 위치를 파악하여 물표와의 충돌을 방지하기 위한 시스템을 개발하였다. 이를 위해 먼저 물표를 속도 모델과 가속도 모델로 표현하여 초기위치로부터의 움직임을 프로세스 잡음과 측정 잡음이 있는 상태에서 위치, 속도 및 가속도를 추정하였다. 추정기법으로는 칼만필터를 적용하였고 시뮬레이션을 통해 제안기법의 유용성을 확인하였다. 다음으로는 레이저센서를 적용하여 이동하는 물표와의 거리를 계측할 수 있는 시스템을 제작하여 물표의 이동 정보를 검출하였다. 이동 물표를 대상으로 속도 모델과 가속도 모델을 적용하여 실험을 수행하였고, 각각의 실험을 통해 불연속적인 측정데이터가 필터링을 통해 매끄럽고 연속적인 측정값으로 얻어지는 것을 확인하였다. 또한 물표 데이터의 계측과 디스플레이를 위한 UI를 구축하였으며, 물표가 일정거리 영역이내에 접근했을 경우 시각, 청각적인 경보를 울릴 수 있는 기능을 부가하였다. 본 연구결과를 통해 저가의 장비로 물표 위치의 추정 성능이 뛰어난 시스템을 구축할 수 있었다.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.829-834
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• 2011

고 집적 회로의 제작에 있어서 노광 공정은 가장 중요한 기술로 주로 마스크 방식의 노광 방법을 사용하지만 다품종 소량 생산 및 주기적인 제품 변화에 있어서 효율적이지 못하기 때문에 마스크리스 리소그래피 기술이 노광공정에서 각광받고 있다. 본 연구에서는 DMD를 이용한 마스크리스 리소그래피에 있어 다중 레이저 빔의 에너지와 중첩도와의 연관성을 시뮬레이션을 통해 분석하였다. 시뮬레이션을 통해 최적의 스캔 라인 간격을 제시하였고, LDI 시스템을 이용한 노광 실험을 통해 미세 페턴의 정밀도를 향상시킬 수 있었다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.