• 한국광학회지
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• 제6권4호
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• pp.365-372
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• 1995

취상변조기나 3*3 광결합기와 같은 특수 광부품을 사용하지 않고도 간섭형 센서의 고감도를 유지할 수 있고, 주변환경의 변화에도 영향을 받지 않는 간섭형 광섬유 센서를 위한 신호처리 기술을 소개하였다. 이 기법은 간섭형 센서의 넓은 다이나믹 레인지와 고감도를 유지한 신호처리를 위해 레이저 다이오드의 주파수 처핑을 이용하며 주변환경의 변화에 의한 측정에러를 보상하기 위해 별도의 간섭계를 기준 간섭계로 사용하였다. 새로운 신호처리 기법을 거울 내장형 Fabry-Perot(FT) 간섭계 온도센서에 적용한 결과 1cm 광섬유 FP 간섭계 센서소자로 부터 $4\times10^{-3\circ}C$(광위상 4.5mrad)의 분해능을 얻었으며 광위상 변화량의 크기가 $\pi$ 이내로 제한되지 않으므로 다이나믹 레인지가 넓은 온도센서의 구현이 가능하였다.

• 소성∙가공
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• 제13권3호
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.918-920
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• 2006

Metal sulfide powders such as MnS, $MoS_2$ and FeS are simply used to the machinery processing improvement agent and solid lubricant in powder metallurgy industrial. And then, metal sulfide powders have received relatively little attention from powder metallurgy. Recently, the portable machine is one of the important interfaces between human or human and electronic machine. With the increase of the intelligent activity, the social and industrial demands for information display device and power source are increasing. The transition metal sulfide materials (FeS, ZnS) have received considerable attention due to the large variety of its electric, optical and magnetic properties. Among the metal sulfide, $FeS_2$ is appealing superior material for applications in $Li-2^{nd}$ battery because of high capacity. ZnS is also a famous phosphor material with various luminescence properties, such as photoluminescence (PL) and electroluminescence (EL). So generally used in the fields of display, sensors and laser. Metal sulfide materials, therefore, are provided for most widely application in all industries. In recent years, material researchers have become increasingly interested in studying with synthesis of metal sulfide.

• Journal of Advanced Marine Engineering and Technology
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• 제23권4호
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• pp.462-472
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• 1999

De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

• 한국분무공학회지
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• 제23권1호
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• pp.22-29
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• 2018

The purpose of this study is to investigate the macroscopic spray characteristics and spray pattern of a gasoline direct injection (GDI) injector according to the increase of injection pressure. The macroscopic spray characteristics, such as a spray tip penetration and spray angle, were measured and analyzed from the frozen spray images, which are obtained from the spray visualization system including the high-speed camera, light-source, long-distance microscope (LDM). The spray pattern was analyzed through the deviation of the center of the spray plum and images were acquired using Nd: YAG Laser and ICCD(Intensified charge coupled device) camera. From the experiment and analysis, it revealed that the injection pressure have a significant influence on the spray tip penetration and spray pattern. However, the injection pressure have little influence on the spray angle. The increase of injection pressure induced the reduction of a closing delay. In addition, the deviation of spray center increase with the increase of injection pressure and the distance from a nozzle tip.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.34-35
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• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

• 대한기계학회논문집A
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• 제31권2호
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• pp.253-259
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• 2007

A new material tester has been developed to measure mechanical properties of thin film specimens at high temperature. It is useful for observing oxide film growth or local deformation on the surface, and for measuring creep strength. Main characteristics of the tester is as follows; First, high temperature is achieved by Joule heating generated by electricity passing through the specimen, which does not need to enclose the specimen by a furnace or a heating chamber. The exposed specimen enables one to observe the surface during the test. Because the overall size of the test rig is compact, the whole test rig can be placed in a chamber for environmental controlled tests. The loading device is from a level scales. Not only static load with fixed counter weight, but also variable load by moving counter weight controlled remotely can be applied for an ordinary creep test and creep-fatigue test, respectively. The detail of the construction, operation principle, and the specification are described. And also, an example of test result obtained using the creep tester is presented.

• KSBB Journal
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• 제26권5호
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• pp.422-426
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• 2011

Alginate bead has been supplemented with various polymers to control permeability and to enhance mechanical strength. In this report, fibroin-reinforced alginate hydrogel was prepared, in which spatial localization of fibroin molecules was investigated. Confocal laser scanning microscopy revealed that fibroin molecules formed a fibrous network in the alginate-fibroin beads, which was expected to enhance mechanical strength as same as in many composite materials. Uniaxial compression test showed that fibroin-reinforced alginate beads had increased mechanical strength only after methanol treatment that caused ${\beta}$-sheet formation among fibroin molecules. Simultaneous curing and dialysis of alginate beads were carried out to remove excesscalcium but to retain fibroin in the dialysis chamber, which fabricated beads without internal fibrous fluorescent stains. Fibroin molecules were only found beneath the surface of the beads. The fibroin-diffused shell was further processed to form a thick wall after drying or was mobilizedto the centre of the bead by methanol treatment. Accordingly, the structure analyses provide processing methods of fibroin to form a wall or center clumps, which could be applied to design controlled delivery device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.