• Title/Summary/Keyword: laser device

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A Study on the Bore-Sighting Automation for Small Arms Using the Image Processing (영상처리기법을 이용한 소화기 조준감사 자동화에 관한 연구)

  • Yeo, Woon-Joo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.9 no.3
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    • pp.5-11
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    • 2006
  • This paper is launched to get an exact bore-sighting value in the process of assembling for a dual-barrel weapon. Image processing method with a CCD(Charged Coupled Device) camera is chosen for the error reduction of bore-sighting. The results of this method by using a CCD camera and the testing target method are described in this paper. After the performance of the dual-barrel weapon and that of the fire-control system in the dual barrel weapon system is confirmed, the bore-sighting which is a part of the process in the system assembly is accomplished. In this process, the position of the barrel is identified by using the testing target method that is an existing bore-sighting method. Then, the fixing line of the fire-control system is checked by a day-optical part. The precision of the bore-sighting is required within several mils, however the manual method using the naked eyes makes it worse. Therefore, a CCD camera is installed in the eyepieces. Next, we can get an image of the sighting and the center coordinate values of the laser-pointer from each barrel by image processing method. A required bore-sighting value is calculated from the eccentricity of the center coordinate. Finally, It can be applied to adopt this result in the assembling process of the dual-barrel weapon.

Effects of passivation layer on the thermal deformation behavior of metal film used in semiconductor devices (반도체용 박막재료의 열응력-변형 특성에 미치는 passivation 층의 영향 분석)

  • Choi, Ho-Seong;Lee, Kwang-Ryol;Kwon, Dong-Il
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.732-734
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    • 1998
  • Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

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Crystal Growth of $YCa_4O(BO_3)_3$ and Preparation of Device for Second Harmonic Generation ($YCa_4O(BO_3)_3$ 비선형광학 단결정 성장 및 Second Harmonic Generation 소자 제조에 관한 연구)

  • ;A.Y. Ageyev
    • Korean Journal of Crystallography
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    • v.11 no.1
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    • pp.16-21
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    • 2000
  • (Yb/sub x/Y/sub 1-x/)Ca₄O(BO₃)₃ single crystals where x=0.3,8,15,20% were grown by Czochralski Method. The crystals grown under the optimum conditions were transparent and colorless with good crystal form. Using polarizing microscope, crystal defects such as parasite crystals and bubbles were detected depending on the composition of melts and pulling rates. The optimum growth parameters for high quality of single crystals were 15∼20 rpm of rotation rate and 2mm/h of pulling rate at the flow rate of 2 l/min of Nitrogen gas. The relationship between crystal axes and optical axes was investigated by optical crystallographic method, polarization technique and single crystal X-ray method. From the spectroscopic measurements, it was confirmed that there were strong absorption bands at 900 and 976.4 nm and strong emission band at 976.4 nm in Yb/sup 3+/ ion doped YCa₄O(BO₃)₃ crystal. For the application of second harmonic generation of 1.064 ㎛ laser, non-linear optical devices with θ=32.32° and Ψ=0°, λ/10 of flatness and the size of 6x8x5.73 mm were fabricated from the grown YCa₄O(BO₃)₃ crystal.

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On the Birefringence Distribution in Optical Disk Substrate Fabricated by Injection Compression Molding (광디스크 기판의 사출압축성형시 발생하는 복굴절에 관한 연구)

  • Kim, Jong-Seong;Kim, Hyeon;Gang, Sin-Il
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.11 s.170
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    • pp.2050-2057
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    • 1999
  • It is necessary to improve mechanical and optical properties in the optical disk substrates as the information storage devices with high storage density using short wavelength laser are being developed. Injection compression molding is regarded as the most suitable process to manufacture optical disk substrates with high dimensional accuracy, low residual stresses, and superb optical properties. In the present study, polycarbonate optical disk substrates were fabricated by injection compression molding and the birefringence, regarded as one of the most important optical properties for optical disk, is measured. The effects of various processing conditions upon the development of birefringence distribution were examined experimentally. It was found that the values of the birefringence distribution were very sensitive to the mold wall temperature history and the variance of the birefringence distribution in the radial direction was affected by the level of the packing and the compression pressure.

Fabrication of Microstructure Array using the Projection Microstereolithography System (전사방식 마이크로광조형을 이용한 배열 형태 미세 구조물 가공)

  • Choi, Jae-Won;Ha, Young-Myoung;Lee, Seok-Hee
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.8 s.197
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    • pp.138-143
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    • 2007
  • Microstereolithography technology is similar to the conventional stereolithography process and enables to fabricate a complex 3D microstructure. This is divided into scanning and projection type according to aiming at precision and fabrication speed. The scanning MSL fabricates each layer using position control of laser spot on the resin surface, whereas the projection MSL fabricates one layer with one exposure using a mask. In the projection MSL, DMD used to generate dynamic pattern consists of $1024{\times}768$ micromirrors which have $13.68{\mu}m$ per side. The fabrication range and resolution are determined by the field of view of the DMD and the magnification of the projection lens. If using the projection lens with high power, very fine microstructures can be fabricated. In this paper, the projection MSL system adapted to a large surface for array-type fabrication is presented. This system covers the meso range, which is defined as the intermediate range between micro and macro, with a resolution of a few ${\mu}m$. The fabrication of array-type microstructures has been demonstrated to verify the performance of implemented system.

Development of an In-process Confocal Positioning System for Nanostereolithography Using Evanescent Light

  • Kajihara, Yusuke;Takeuchi, Toru;Takahashi, Satoru;Takamasu, Kiyoshi
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.3
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    • pp.51-54
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    • 2008
  • A novel stereolithography method using evanescent light has been proposed as a means to realize 100-nanometer resolution. An in-process measurement system with high accuracy has been introduced to the nanostereolithography apparatus. Specifically, an optical microscopic system was developed to monitor the exposure process and a confocal positioning system was established to improve the longitudinal positioning accuracy in the layer-by-layer process. A high-power objective lens, a tube lens, and a charge coupled device (CCD) were included in the optical microscopic system, whereas a laser, a high-power objective lens, a piezoelectric (PZT) stage, a condenser lens, a pinhole, and a photomultiplier (PMT) made up the confocal microscopic system. Two verification experiments were conducted, and the results indicated that the optical microscopic system had a horizontal resolution of 200 nm and that the confocal positioning system provided a depth resolution of 30.8 nm. These results indicate that nanostereolithography can be successfully performed with this system.

Comparison between Moxibustion and the Intense Pulsed Light (IPL) and the Clinical Application of Photo-moxa (구법(灸法)과 intense pulsed light(IPL)의 특성 비교 및 광선구(光線灸)의 한방임상(韓方臨床) 활용(活用))

  • Jang, In-Soo;Sun, Seung-Ho;Nam, Dong-Hyun;Kum, Su-Eun;Seo, Hyung-Sik
    • The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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    • v.23 no.3
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    • pp.78-83
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    • 2010
  • Objectives : The purpose of this study is to compare the principles between moxibustion and the 'Intense pulsed light (IPL)' and to investigate the clinical application of the photo-moxa for the Korean medicine fields. Methods : The characteristics of moxibustion, IPL, parabolic reflector moxa and the dermatology surgical use of moxibustion were reviewed in the literature. Results : IPL is one type of light treatments that is employed by radiating the short-pulse wave, which is transformed from the light of high intensity. There has been used parabolic reflector in Asia for more than 2,000 years, and this hand-held device used for moxibustion in traditional medicine. Moxibustion is one of the treatment tools in Korean medicine using the heat energy. The fluence or energy density of IPL in clinical circumstances is similar to parabolic reflector moxa of moxibustion. IPL and parabolic reflector moxa shared same treatment principle employing the heat energy. Therefore IPL could apply for many indications in Korean medicine as a moxibustion tool and acupuncture. Conclusions: IPL may be plausible to be a fascinate method in phototherapy of Korean medicine.

Characterization of amplified spontaneous emission light source from an $Er^{3+}$/$Tm^{3+}$co-doped silica fiber ($Er^{3+}$$Tm^{3+}$이 복합 첨가된 실리카 광섬유의 ASE 광원에 대한 특성 평가)

  • Jeong, Hoon;Oh, K.
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.96-97
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    • 2000
  • Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

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Effect of ZnO buffer layer on the property of ZnO thin film on $Al_{2}O_{3}$ substrate (사파이어 기판 위에 증착된 ZnO 박막 특성에 대한 ZnO 버퍼층의 영향)

  • Kim, Jae-Won;Kang, Jeong-Seok;Kang, Hong-Seong;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.04a
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    • pp.140-142
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    • 2003
  • ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

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A Study on Electrostatic Powder Coating for 3D Scanning of Diffused Surfaces (난반사 표면의 3D 스캐닝을 위한 정전분말코팅 연구)

  • Maeng, Heeyoung;Lee, Myoung Sang
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.24 no.1
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    • pp.56-62
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    • 2015
  • Using an optical 3D scanning device to collect data from a diffused reflection surface is very difficult. To solve this problem, there are many applications including a spray-type developer and silicon molds. However, using a developer can cause chemical reactions between objects and particles of the developer and uneven surfaces on the object. To overcome these problems, we suggest an electrostatic powder coating method for even coating of particles onto surfaces for collecting 3D shape data. We have developed an automatic, electrostatic powder-coating machine and performed three different experiments to compare this system with a laser interferometer and a T-scan 3D scanner. As a result, we could ascertain the various characteristics of this new method, including good sensitivity for the various surface states of the bare surface, developer, and electrostatic powder coating. Finally, we verified the outstanding scanning performance and were able to demonstrate that this method achieves quality than traditional methods.