• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1571-1578
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• 2013

With the emergence of high-integration array and large area panel process, the need to minimize the generation of particles in the field of semiconductor, LCD and OLED has grown. As an alternative to the conventional roller system, a contactless magnetic conveyor has been proposed to reduce the generation of particles. An EM-PM hybrid which is one of magnetic levitation types is already proposed for the conveyor system. One of problems pointed out with this approach is the vibration caused by the dynamic interaction between conveyor and rail. To reduce the vibration, the introduction of a secondary suspension system which aims to decouple the levitation electromagnet from the main body is proposed. The objective of this study is to develop a dynamic model for the magnetically levitated conveyor, and to investigate the effect of the introduced suspension system. An integrated model of levitation system and rail based on 3D multibody dynamic model is proposed. With the proposed model, the dynamic characteristics of maglev conveyor system are analyzed, and the effect of the secondary suspension and the stiffness and damping are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.194-194
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• 2006

Polymer light-emitting diodes(PLEDs) have great potential application in large area flat panel displays and general lighting so intense academic and industrial research, and impressive scientific and technological progress has been achieved in this field. However, the efficiency and stability of PLEDs till need to be improved in order to fully realize the advantages of low cost and ease of fabrication provided by organic materials. Here, we report our effort to enhance the PLED' s performance in two approaches : 1) Utilizing nano-structured materials such as nano particles, clay, nano porous silica in active layer 2) Modifying the device structure in nano scale to improve not only the device efficiency but also its stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.4
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• pp.219-224
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• 2006

Silver paste with low sintered temperature has been developed in order to apply electronic parts, such as bus electrode, address electrode in PDP (Plasma Display Panel) with large screen area. In this study, nano-sized silver particles with 10-30 nm were synthesized from silver nitrate ($AgNO_3$) solution by chemical reduction method and silver paste with low sintered temperature was prepared by mixing silver nanoparticles, conventional silver powder with the particle size 1.6 um and Pb-free frit. Conductive thick film from silver paste was fabricated by screen printing on alumina substrate. After firing at $540^{\circ}C$, the cross section and surface morphology of the thick films were analyzed by FE-SEM. Also, the sheet resistivity of the fired thick films was measured using the four-point technique.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.409-412
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• 2006

EEFL can be driven by square wave driving method. A square wave is applied directly to both ends of EEFL by cascaded multi-stage full-bridge inverter. The various current shapes of lamp are achieved by various inductors between lamp and inverter. In this paper, it is newly investigated that the area of current directly influences the luminance. Furthermore, the 3-level square wave is considered to drive EEFL with self-discharge characteristics. The highest luminance efficiency is achieved by properly controlling the rate of self-discharge usage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.254-255
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• 2005

In this paper, we investigated electrical characteristics of the X-ray detector of mercuric iodide (HgI2) film fabricated by PIB(Particle-in-Binder) Method on ITO substrates 17cm$\times$20cm in size with thicknesses ranging from approximately 200${\mu}m$ to 240${\mu}m$. In the present study, using I-V measurements, their electrical properties such as leakage current, X-ray sensitivity, and signal-to-noise ratio (SNR),were investigated. The results of our study can be useful in the future design and optimization of direct active-matrix flat-panel detectors (AMFPD) for various digital X-ray imaging modalities.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.451-454
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• 2000

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD usign $C_2H_2$ gas. Since the discovery of carbon nanotubes, growth of carbon nanotubes has been achieved by several methods such as laser vaporization, arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is important to flat panel display applications. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD. Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. In this paper, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density of catalytic particles reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and each nonotubes are grown in bundle.