• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.846-848
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• 2002

A large-area (830mm ${\times}$ 1,020mm) inductively coupled plasma source with a six internal straight antennas was developed for large area FPD etch process applications and the effects of magnetic fields employing permanent magnets on the plasma characteristics were investigated. By employing the magnetic fields perpendicular to the six straight antenna currents using permanent magnets, improved plasma characteristics such as increase of the ion density and decrease of both electron temperature and plasma potential could be achieved in addition to the stability of the plasma possibly due to the reduction of the electron loss. However, the application of the magnetic field decreased the plasma uniformity slightly even though the uniformity within 10% could be maintained in the 800mm processing area.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.544-546
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• 2008

An improved dual-path energy recovery circuit (ERC) using a current source and a voltage source for plasma display panel (PDP) is proposed. The proposed ERC uses the voltage source to charge a panel and the current source to discharge the panel. Thus, the proposed circuit can make the panel charge to $V_S$ and discharge to 0V, fully and it is possible to achieve zero voltage switching (ZVS) of all switches in H-bridge inverter and zero current switching (ZCS) of all switches in the ERC. Moreover, it has less conduction and switching loss in ERC devices by the dual energy recovery paths for charging and discharging the panel. Furthermore, it has features of canceling the gas discharge current, high performance and the low cost ERC components. The operation principle and features of the proposed ERC are presented in detail and verified with 42-inch SD PDP.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.141-141
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• 2006

• Journal of Nutrition and Health
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• v.23 no.2
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• pp.81-92
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• 1990

Ten college women were treated with either corn oil(CO< as a source of C18:2, $\omega$6) or fish oil concentrates(FO, as a source of C20:5+C22:6, $\omega$3) with experimental diet for 7 days and then returned to normal home made diet. Kinetic changes of plasma and RBC lipids, tocopherol, MDA levels and hemolysis were observed at day-0, -3, -7, -8, -10, -14 and -21 of experimental periods. Plasma and RBC tocopherol contents were significantly increased at day-3 and -7 by tocopherol tocopherol supplement in dietary oil, but there was no significant difference between CO and FO diet with large dose of tocopherol supplement. After stop experimental regimen at day-7, plasma tocopherol content was sustained at high level until day-10 but drastically decreased at day-14 and remained at low level at day-21. However, RBC tocopherol level was not greatly responded to the dietary intake of tocopherol and was varied in the very narrow range. MDa levels of plasma and RBC were not responded in the same way as tocopherol content of plasma. MDa content of RBC was very low compared to that of plasma. RBC hemolysis by incubation in hypotonic solution was negatively correlated to plasma tocopherol level and was not correlated to the level of MDa in either plasma or RBC. There were no significant change in the levels of plasma cholesterol, HDL-chol, triglyceride, phospholipid, and lipoprotein pattern throught experimental periods.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.142-146
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• 2006

A novel internal-type linear inductive antenna, which we refer to as a double comb-type antenna, was developed for a large-area plasma source with substrate size of $880\;mm{\times}660\;mm$ ($4^{th}$ generation glass size). In this study, effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas of the order of $3.18{\times}10^{11}\;cm^{-3}$ could be obtained with a pressure of 15 mTorr Ar at an inductive power of 5000 W with good plasma stability. This plasma density is higher than that obtained for the conventional double comb-type antenna, possibly due to the plasma confinement, low rf voltage, resulting in high power transfer efficiency. Also, due to the remarkable reduction in the antenna rf voltage and length, a plasma uniformity of less than 3% could be obtained within a substrate area of $880\;mm{\times}660\;mm$ as rf power increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.933-936
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• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.173-173
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• 2002

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.