• KIEE International Transactions on Electrophysics and Applications
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• 제4C권1호
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• pp.10-14
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• 2004

A large area electron beam generator has been developed for industrial applications, for example, waste water cleaning, flue gas treatment, and food pasteurization. The operational principle is based on the emission of secondary electrons from the cathode when ions in the plasma contact the cathode, which are accelerated toward the exit window by the gradient of the electric potential. Conventional electron beam generators require an electron beam scanning mechanism because a small area thermal electron emitter is used. The electron beam of the large area electron beam generator does not need to be scanned over target material because the beam area is considerable. We have fabricated a large area electron beam generator with peak energy of 200keV, and a beam diameter of 200mm. The electron beam current has been investigated as a function of accelerating voltage and distance from the extracting window while its radial distribution in front of the extracting window has been also measured.

• 전기학회논문지
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• 제56권4호
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• pp.773-776
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• 2007

A microstructure array has been proposed for micro plasma generation using electroplating and double exposed process. A stable atmospheric plasma has been generated at a low voltage by utilizing the micro electrode gap. Self-aligned microstructure can provide uniform electrode overlap with precisely controlled gap between the electrodes. The proposed structure allows for triode operation, which can expand the generated plasma over a large area by applying a lateral electric field. Electrical characteristics of the micro triode confirm the large numbers of the plasma ions are drifted to the secondary cathode by the lateral electrical field.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.490-490
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• 2013

In semiconductor industry, it is expected that plasma process which use 450 mm source will be used at next generation. However, main obstacle of the large area plasma source is plasma uniformity from it. When electrode is enlarged, field difference between center area and side area reduces the plasma uniformity [1-3]. Therefore we investigate multi-electrode which diminish this field difference.We designed two multi-electrode models. One has two segments and the other has five segments. Each multi-electrode model is connected with two power generator and two matchers. One generator and one matcher is connected with center electrode part. The other one generator and the other one matcher is connected with side electrode part. The ion density is measured at 29 points by using floating harmonic method [4-6]. After measuring the data of each multi-electrode model, we discuss the difference of profile between two models' data.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.141-141
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• 2006

• 한국표면공학회지
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• 제34권5호
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• pp.384-390
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• 2001

The hollow cathode discharge is a kind of plasma formation scheme in which plasma is formed inside a hollow structure, the cathode, with current to a nearby anode of arbitrary shape. In this scheme, electrons reflex radially within the hollow cathode, establishing an efficient ionization mechanism for gas within the cavity. An existence condition for the hollow cathode effect is that the electron mean-free-path for ionization is of the order of the cavity radius. Thus the size of this kind of plasma source must decrease as the gas pressure is increased. In fact, the hollow cathode effect can occur even at atmospheric pressure for cathode diameters of order 10-100 $\mu\textrm{m}$. That is, the "natural" operating pressure regime for a "micro hollow cathode discharge" is atmospheric pressure. This kind of plasma source has been the subject of increasing research activity in recent years. A number of geometric variants have been explored, and operational requirements and typical plasma parameters have been determined. Large arrays of individual tiny sources can be used to form large-area, atmospheric-pressure plasma sources. The simplicity of the method and the capability of operation without the need for the usual vacuum system and its associated limitations, provide a highly attractive option for new approaches to many different kinds of plasma applications, including plasma surface modification technologies. Here we review the background work that has been carried out in this new research field.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.216-220
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• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.

• 한국진공학회지
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• 제15권3호
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• pp.241-245
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• 2006

본 연구에서는 대면적 플라즈마 공정에 적용 가능한 고밀도 플라즈마를 발생시키기 위하여 기존의 내장형 serpentine-type 안테나와 새롭게 고안된 내장형 유도결합형 multiple U-Type 안테나를 1020mm X 920mm(기판 880 X 660mm)의 챔버에서 연구하였다. 내장형 유도결합형 multiple U-type을 적용한 플라즈마는 serpentine-type과 비교하여 더 높은 플라즈마 밀도, 높은 radical 밀도, 좋은 균일도를 관찰할 수 있었다. 이는 serpentine-type의 경우와 비교하여 보다 적은 정상파 효과와 높은 유도결합에 기인한다. 내장형 유도결합형 multiple U-type 안테나의 적용으로 $2\times10^{11}/cm^3$의 높은 플라즈마 밀도를 얻을 수 있었고 5000W의 입력전압과 Ar 가스 15mTorr 공정압력조건에서 4%의 균일도를 관찰할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.271-276
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• 2011

대면적 대기압 플라즈마 반응 장비를 플라즈마-용액 시스템에 적용하여 액상 내부에 잠입된 폴리프로필렌(PP) 필름의 표면손상 없이 관능기 도입 가능성을 탐색하였다. 액상으로 1-butyl-3-methylimidazolium tetrafluoroborate: $[BMIM]^{+}[BF_{4}]^{-}$ 이온성 액체 수용액을 사용한 경우, 안정적으로 플라즈마를 발생시킬 수 있었다. PP 필름의 플라즈마 처리 결과, PP 표면에 다양한 산소 함유 관능기들이 도입되었음을 확인할 수 있었다. 플라즈마 처리 후 PP의 표면 자유에너지는 처리시간, 전압의 증가에 따라서 증가하며, 1.5M 이온성 액체 수용액 농도에서 가장 큰 값을 나타내었다. ATR-FTIR 분석 결과, 다양한 카르보닐 기(1,726 $cm^{-1}$, 1,643 $cm^{-1}$)와 하이드록시 기$(3,100{\sim}3,500\;cm^{-1})$의 흡광도가 증가하였고, XPS 분석은 ATR-FTIR 분석 결과를 뒷받침하여 주었다.

• 한국기계가공학회지
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• 제21권5호
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining