• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1237-1239
• /
• 2008

Imaging Systems Technology is conducting research and development in large area flexible plasma displays. These displays will be used for low cost dynamic signage and billboards. In this paper, IST will report its current progress in achieving very bright full color displays.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.125-129
• /
• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.234.1-234.1
• /
• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.544-547
• /
• 2006

In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.608-611
• /
• 2000

Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.573-576
• /
• 1998

In this paper, we analyzed electric field density and plasma condition to ICP reactor geometry structure, to generate plasma, to maintain plasma uniformity of large area LCD panel in ICP reactor also, we simulated electric field density for all kind existence current (antena and plasma current) in ICP reactor to analyze plasma antena structure

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.478-478
• /
• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.846-848
• /
• 2002

A large-area (830mm ${\times}$ 1,020mm) inductively coupled plasma source with a six internal straight antennas was developed for large area FPD etch process applications and the effects of magnetic fields employing permanent magnets on the plasma characteristics were investigated. By employing the magnetic fields perpendicular to the six straight antenna currents using permanent magnets, improved plasma characteristics such as increase of the ion density and decrease of both electron temperature and plasma potential could be achieved in addition to the stability of the plasma possibly due to the reduction of the electron loss. However, the application of the magnetic field decreased the plasma uniformity slightly even though the uniformity within 10% could be maintained in the 800mm processing area.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.183-183
• /
• 2016

Inductively coupled plasma having the high-density is often used for high productivity in the plasma processing. In large area processing, the plasma can be generated by using the multi-pole connected in parallel. However, in case of this, the power cannot transfer to plasma uniformly. To address the problem, we studied the mechanism of inductively coupled plasma connected in parallel by using transformer model. We also studied about the change of the plasma parameters over the time through the power balance equation and particle balance equation.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.142-146
• /
• 2006

A novel internal-type linear inductive antenna, which we refer to as a double comb-type antenna, was developed for a large-area plasma source with substrate size of $880\;mm{\times}660\;mm$ ($4^{th}$ generation glass size). In this study, effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas of the order of $3.18{\times}10^{11}\;cm^{-3}$ could be obtained with a pressure of 15 mTorr Ar at an inductive power of 5000 W with good plasma stability. This plasma density is higher than that obtained for the conventional double comb-type antenna, possibly due to the plasma confinement, low rf voltage, resulting in high power transfer efficiency. Also, due to the remarkable reduction in the antenna rf voltage and length, a plasma uniformity of less than 3% could be obtained within a substrate area of $880\;mm{\times}660\;mm$ as rf power increased.