• 한국위성정보통신학회논문지
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• 제9권2호
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• pp.52-57
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• 2014

본 논문에서는 위성 통신 단말용 X 대역 송신 필터와 수신 필터를 설계하고 제작 및 시험한 결과를 보인다. 송신 필터는 7.9 ~ 8.4 GHz, 수신 필터는 7.25 ~ 7.75 GHz의 대역을 가지며 두 필터 모두 상호 인접 주파수에서 매우 높은 차단 특성을 요구하는 필터이다. 이러한 필터를 인라인(in-line) 형태로 제작하기 위해 비공진 노드 기법을 사용하였으며 비공진 노드에는 E-평면 접합이 사용되었다. 회로 모델 설계 및 전자기 모델 설계 등의 단계적 설계 절차에 대해 기술하였다. 제작 및 튜닝 결과 두 필터 공히 온도 변화를 고려한 모든 요구조건을 만족하였으며 기존의 국내 상용품 대비 크기 및 무게를 30 ~ 40 % 줄일 수 있었다.

• Restorative Dentistry and Endodontics
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• 제17권1호
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• pp.191-205
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• 1992

The purpose of this study was to evaluate the microleakage of class II composite resin inlays and compare them with the conventional light-cured resin filling restorations. Class II cavities were prepared in 60 extracted human molars with which cervical margins were located below 1.0mm at the cemento-enamel junction using No. 701 tapered fissure carbide bur. All of the prepared cavities were restored as follows and divided into 6 groups. Group I and 2 were restored using direct filling technique and group 3,4,5 and 6 were restored using direct inlay technique that was cemented with dual-cured resin cements. group I: Cavities were restored with light-curing composite resin, Brilliant Lux. group 2. Cavities were restored with light-curing composite resin, Clearfil PhotoPosterior. group 3: Cavities were restored with Clearfil CR Inlay and heat treated at $125^{\circ}C$ for 7 minutes. group 4: Cavities were restored with same material as group 3 and heat treated at $100^{\circ}C$ for 15 minutes. group 5: Cavities were restored with Brilliant (Indirect esthetic system) and heat treated at $125^{\circ}C$ for 7 minutes. group 6: Cavities were restored with same material as group 5 and heat treated at $100^{\circ}C$ for 15 minutes. All specimens were polished with same method and thermocycled between $6^{\circ}C$ and $60^{\circ}C$, then immersed in a bath of 2.0% aqueous solution of basic fuchsin dye for 24 hours. Dyed specimens were sectioned longitudinally and dye penetration degree was read on a scale of 0 to 4 by Tani and Buonocore's method 45). The results were as follows: 1. Microleakage was observed rather at the cervical margins than at the occlusal margins in all groups. 2. Composite resin inlay groups showed significantly less leakage than direct filling groups at the cervical margins (p < 0.001). 3. In composite resin inlay groups, there was no significant difference in microleakage between specimens by heat treating temperature and time (p > 0.05). 4. There was no significant difference in leakage between each groups at the occlusal margins (p > 0.05).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.292-295
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• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

• 한국재료학회지
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• 제22권10호
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• pp.562-568
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• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• Restorative Dentistry and Endodontics
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• 제23권1호
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• pp.346-356
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• 1998

The purpose of this study was to evaluate the sealing ability of various canal filling methods. Palatal roots of ninety extracted human maxillary molar teeth were resected at cementoenamel junction. Eighty of them were randomly assigned to four experimental groups, ten were served as positive and negative controls. All canals were prepared to # 40 using Profile. Experimental groups were obturated by lateral condensation technique, Thermafil technique, Continuous Wave of Condensation Technique, and down-pack & back-fill technique of Obtura-II, each with root canal sealer. Control groups were not obturated. Teeth were immersed in resorcinol-formaldehyde resin for 5 days at $4^{\circ}C$, and the resin was allowed to polymerize completely for 4 days at room temperature. Teeth were then ground horizontally at 1.5mm(level 1), 2.5mm(level 2), 3.5 mm(level 3) from the anatomical apex and examined with a stereomicroscope at ${\times}40$ magnification. The gap between the canal wall and the filling material, which was filled with the resin, was measured at each of the three levels. Each ratio of leakage was obtained by calculating the ratio of the area of the resin to the total area of the canal and was analyzed statistically (Rank-sum test). The results were as follows : 1. At the level 1, there was the greatest leakage in the Thermafil group and Obtura-II group, and the difference between the Obtura-II group and Continuous Wave of Condensation Technique group was statistically significant(p<0.05). 2. At the level 2, there was the least leakage in the Continuous Wave of Condensation Technique group, but there was no statistically significant difference between each group (p>0.05). 3. At the level 3, there was no statistically significant difference between each group(p>0.05).

• 대한건축학회논문집:구조계
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• 제33권12호
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• pp.91-98
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• 2017

In this study, the effect of window installation position in the residential building with the external insulation was numerically investigated in terms of insulation performance and heating/cooling energy consumption. For different window positions, 2-D heat transfer simulation was conducted to deduce the linear thermal transmittance, which was inputted to the dynamic energy simulation in order to analyze heating/cooling energy consumption. Simulation results showed that the linear thermal transmittance ranges from 0.05 W/mK to 0.7 W/mK, and is reduced as the window is installed near the external finish line. Indoor surface temperature and TDR analysis showed that the condensation risk is the lowest when the window is installed at the middle of the insulation and wall structure. It was also found that the window installation near the external finish can reduce the annual heating/cooling energy consumption by 12~16%, compared with the window installation near the interior finish. Although the window installation near the external finish can achieve the lowest heating/cooling energy consumption, it might lead to increased condensation risks unless additional insulation is applied. Thus, it can be concluded that the window should be installed near the insulation-wall structure junction, in consideration of the overall performance including energy consumption, condensation prevention and constructability.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.43-51
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• 2014

3차원 적층 패키지(3D integrated package) 에서 초소형 패키지 내에 적층되어 있는 칩들의 발열로 인한 열 신뢰성 문제는 3차원 적층 패키지의 핵심 이슈가 되고 있다. 본 연구에서는 TSV(through-silicon-via) 기술을 이용한 3차원 적층 패키지의 열 특성을 분석하기 위하여 수치해석을 이용한 방열 해석을 수행하였다. 특히 모바일 기기에 적용하기 위한 3D TSV 패키지의 열 특성에 대해서 연구하였다. 본 연구에서 사용된 3차원 패키지는 최대 8 개의 메모리 칩과 한 개의 로직 칩으로 적층되어 있으며, 구리 TSV 비아가 내장된 인터포저(interposer)를 사용하여 기판과 연결되어 있다. 실리콘 및 유리 소재의 인터포저의 열 특성을 각각 비교 분석하였다. 또한 본 연구에서는 TSV 인터포저를 사용한 3D 패키지에 대해서 메모리 칩과 로직 칩을 사용하여 적층한 경우에 대해서 방열 특성을 수치 해석적으로 연구하였다. 적층된 칩의 개수, 인터포저의 크기 및 TSV의 크기가 방열에 미치는 영향에 대해서도 분석하였다. 이러한 결과를 바탕으로 메모리 칩과 로직 칩의 위치 및 배열 형태에 따른 방열의 효과를 분석하였으며, 열을 최소화하기 위한 메모리 칩과 로직 칩의 최적의 적층 방법을 제시하였다. 궁극적으로 3D TSV 패키지 기술을 모바일 기기에 적용하였을 때의 열 특성 및 이슈를 분석하였다. 본 연구 결과는 방열을 고려한 3D TSV 패키지의 최적 설계에 활용될 것으로 판단되며, 이를 통하여 패키지의 방열 설계 가이드라인을 제시하고자 하였다.

• 한국진공학회지
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• 제11권3호
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• pp.151-158
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• 2002

Decaborane ($B_{10}H_{14}$) 이온 주입법으로 n-type Si (100) 기판에 ultra-shallow $p^{+}-n$ 접합을 형성시켰다. 이온 주입에너지는 5kV와 10kV, 이온 선량은 $1\times10^{12}\textrm{cm}^2$와 $1\times10^{13}\textrm{cm}^2$로 decaborane을 이온 주입시켰다. 이온 주입된 시료들은 $N_2$ 분위기에서 $800^\{\circ}C$, $900^{\circ}C$, $1000^{\circ}C$에서 10초 동안 RTA(Rapid Thermal Annealing) 처리를 하였다. 또한 가속에너지에 따른 결함을 확인하기 위해서 15 kV의 이온 주입 에너지에서 $1\times10^{14}\textrm{cm}^2$만큼 이온 주입하였다. 2 MeV $^4He^{2+}$ channeling spectra에서 15 kV로 주입된 시료가 bare n-type Si와 5 kV, 10 kV의 에너지로 주입된 시료보다 주입시 생긴 결함에 의해 backscattering yield가 더 높게 나타났으며 spectra로부터 얻은 이온 주입으로 인한 비정질층의 두께는 표면으로부터 가속전압이 5kV, 10kV, 15kV일 때 각각 1.9nm, 2.5nm, 4.3nm였다. 10 kV에서 이온 주입된 시료를 $800^{\circ}C$ 열처리 한 결과 결함의 회복으로 인해 bare Si와 비슷한 backscattering yield를 보였으며 이때의 계산된 비정질 층의 두께는 0.98 nm이었다. 홀 측정과 면저항 측정은 dopant의 활성화가 주입된 에너지, 이온 선량, 열처리 온도에 따라 증가함을 보여주었다. I-V 측정 결과 누설 전류 밀도는 열처리 온도가 $800^{\circ}C$에서 $1000^{\circ}C$까지 증가함에 따라 감소하였고 주입에너지가 5kV에서 10kV까지 증가함에 따라 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• 한국재료학회지
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• 제3권5호
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• pp.553-561
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_2O_3$를 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 $BaTiO_3$PTCR 재료에 $Bi_2O_3$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_2O_3$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 $Y-BaTiO_3$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다. $Bi_2O_3$의 첨가량에 따라 계내에 존재하는 각 이온의 반경, 결함 반응식 및 격자 탄성 변형 에너지 등을 고려하면 $Y-BaTiO_3$결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 $BaTiO_3$에 고용이 되지 않는 것으로 밝혀졌으며 $B_2O_3$를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로써 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.