• 한국주조공학회지
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• 제20권4호
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• pp.240-246
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• 2000

Surface layer properties such as composition, phase, hardness, and oxide layer condition are very important if the main failure mechanism of metals is wear. Generally, stable and dense oxide layers are known to decrease the wear rate of metals by prohibition of metallic junction occurred between bare metals. Addition of Si above 4 wt% to DCI(Ductile Cast Iron) is reported to enhance the significant oxidation resistance by forming the silicon-rich surface layer which inhibits further oxidation. And addition of up to 2 wt% Mo to high Si ductile iron produces significant increases in high temperature tensile strength, creep strength, thermal fatigue resistance and oxidation resistance. High pressure wear characteristics of unalloyed DCI(Ductile cast Iron), 4.46 wt% Si ductile iron, 4.3 wt% Si-0.52 wt% Mo ductile iron were investigated through unlubricated pin-on-disc wear test. Wear test was carried out at speed of 23m/min, under pressure of 3 MPa and 3.3 MPa. Wear surfaces of each specimen were observed by SEM to determine the wear mechanism under high pressure wear condition. Addition of Si 4.46 wt% severely deteriorated wear property of ductile iron compared to unalloyed DCI. But combined addition of Si 4.3 wt%andMo0.52wt%decreasedthefrictioncoefficient(${\mu}$)ofductileironsandremarkablydelayedthemild-severeweartransition.

• 한국인터넷방송통신학회논문지
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• 제9권3호
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• pp.55-60
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• 2009

본 논문은 철강 제품의 제조 공정 중에 철강 표면에 불규칙하고 불균일하게 형성되는 스케일의 특성 분석에 관한 것이다. 고온에서 제작되는 철강 제품은 공기 중의 산소와 접촉하여 단 시간에 철산화물을 형성하게 된다. 이러한 철산화물을 스케일이라고 한다. 스케일은 철강 제품의 산화막 역할을 하여 제품 표면을 보호하는 역할도 하지만 불균일하게 현성된 스케일은 오히려 철강 제품의 외관을 해치게 되며 추가 공정 시에 적잖은 문제 거리가 된다. 산세공정을 통해 산(acid)으로 스케일을 제거하는 공정이 있지만 이 공정 또한 스케일의 특성 파악이 전제가 된지 않은 상태로 시행되고 있는 실정이다. 따라서 본 논문에서는 보다 효과적이고 효율적인 공정을 위하여 스케일의 특성 파악에 대한 내용을 소개하며, 이에 전파가 이용된다. 전파를 이용하여 스케일의 분포, 접합 특성, 철강 코일의 스케일 분포 등을 연구할 수 있는 실험 장비를 소개한다. 또한 이론적 분석과 간단다한 시뮬레이션으로 통하여 이의 타당성을 입증한다.

• 대한전자공학회논문지TC
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• 제42권9호
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• pp.49-56
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• 2005

RF 전력증폭기 및 Doherty 전력증폭기의 열 메모리 효과는 변조신호의 대역폭과 동작 전력의 레벨에 따라 민감하게 영향을 미친다. 본 논문에서는 전기적인 비선형성을 정확히 모델링하고 열 메모리 효과가 Doherty 증폭기의 왜곡형성에 어떤 영향을 미치는지에 대해 연구하였다. Doherty 증폭기의 열 메모리 특성을 모델링하기 위하여 순시적으로 소모되는 전력과 순시 접합온도의 정확한 관계식을 정립하여 제안하였다. 제안된 모델의 파라미터는 서로 다른 여기상태에 따라 전력증폭기의 특성이 결정되는데, 트랜지스터의 열 메모리 효과는 대역폭이 넓은 W-CDMA 및 UMTS 시스템에서 충분히 고려되어야 한다. 이러한 열 메모리 효과를 사전왜곡 함수에 적응하여 선형화된 전력증폭기의 출력스펙트럼에서 최대 20 dB정도의 ACLR 개선효과를 보인다. 측정결과는 60W급 LDMOS Doherty 전력증폭기로 측정하였으며, 열 메모리 보상기는 ADS로 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국환경과학회지
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• 제11권3호
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• pp.169-176
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• 2002

The purpose of this study is designed to estimate the air quality of subway stations that have the underground platforms in Pusan Metropolitan City, from September to November 2000, over seven times. The subjects include Yonsan-dong station, Somyon station, Pusan station, Nampo-dong station, and Tushil station. The samplings were conducted at three points of each station, i.e. gate, ticket gates, and platforms. The major materials for analysis were CO, NO, NO$_2$, and $O_3$. The experiment was conducted at 7:00 pm with KIMOTO HS-seven Handy sampler and Tedlar Bag of SKC INC(U.S.A). In order to more fully understand station environments, we also measured temperature at each point. The results showed that $O_3$ average concentration at Yonsan-dong station was higher than others with 38~51 ppb. The average concentration of NO was high at ticket gate and platform at Somyon station(119 ppb, 122 ppb), Nampo-dong station(102 ppb, 100 ppb). These results show that the air pollution of stations with underground shopping malls was higher than others. At Somyon station having a junction station, NO and NO$_2$ concentration level of platform-2(noncrowded) was higher than platform-1(crowded). This is most likely due to the accumulation of air pollutants and inadequate ventilation systems.

• 한국세라믹학회지
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• 제26권3호
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• pp.423-437
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• 1989

Al2O3/ZrO2 composites were prepared by precipitation method using Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O as starting materials and NH4OH as a precipitation agent. Al2O3/ZrO2 composites(series A) were prepared by mixing Al2O3 powder obtained by single precipitation method with ZrO2(＋3m/o Y2O3) powder obtained by co-predipitation method. Al2O3/ZrO2 composites (series B) were prepared by co-precipitation method using the three starting materials. In all cases, the composition was controlled as Al2O3-15v/o ZrO2(＋3m/o Y2O3). The composites of series A showed higher final relative densities than those of series B and tetagonal ZrO2 in all cases was retained to about 95% at room temperature. ZrO2 particles were coalesced more rapidly in grain boundary of Al2O3 than within Al2O3 grain. ZrO2 particles were located at 3-and 4-grain junction of Al2O3 and limited the grain growth of Al2O3. It was observed that MgO contributed to densification of Al2O3 but limited grain growth of Al2O3 by MgO was not remarkable. In all Al2O3/ZrO2 composites, exaggerated grain growth of Al2O3 was not observed and Al2O3/ZrO2 composites were found to have homogeneous microstructures.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).