• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.52-57
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• 2014

In this paper, designs and test results of X-band Tx and Rx filters for satellite communications are presented. The passbands are 7.9 ~ 8.4 GHz and 7.25 ~ 7.75 GHz for the Tx filter and the Rx filter respectively. Both of the filters require very high rejection performance between the two passbands. In order to make these filters in an in-line type, non-resonating node method was adopted and E-plane junction was used for the non-resonating node. Design procedures of circuit model design and full-wave electromagnetic model design are described. The test results show that all the performances meet requirements including temperature variations and the sizes are smaller than those of domestic commercial filters by about 30 ~ 40 %.

• Restorative Dentistry and Endodontics
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• v.17 no.1
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• pp.191-205
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• 1992

The purpose of this study was to evaluate the microleakage of class II composite resin inlays and compare them with the conventional light-cured resin filling restorations. Class II cavities were prepared in 60 extracted human molars with which cervical margins were located below 1.0mm at the cemento-enamel junction using No. 701 tapered fissure carbide bur. All of the prepared cavities were restored as follows and divided into 6 groups. Group I and 2 were restored using direct filling technique and group 3,4,5 and 6 were restored using direct inlay technique that was cemented with dual-cured resin cements. group I: Cavities were restored with light-curing composite resin, Brilliant Lux. group 2. Cavities were restored with light-curing composite resin, Clearfil PhotoPosterior. group 3: Cavities were restored with Clearfil CR Inlay and heat treated at $125^{\circ}C$ for 7 minutes. group 4: Cavities were restored with same material as group 3 and heat treated at $100^{\circ}C$ for 15 minutes. group 5: Cavities were restored with Brilliant (Indirect esthetic system) and heat treated at $125^{\circ}C$ for 7 minutes. group 6: Cavities were restored with same material as group 5 and heat treated at $100^{\circ}C$ for 15 minutes. All specimens were polished with same method and thermocycled between $6^{\circ}C$ and $60^{\circ}C$, then immersed in a bath of 2.0% aqueous solution of basic fuchsin dye for 24 hours. Dyed specimens were sectioned longitudinally and dye penetration degree was read on a scale of 0 to 4 by Tani and Buonocore's method 45). The results were as follows: 1. Microleakage was observed rather at the cervical margins than at the occlusal margins in all groups. 2. Composite resin inlay groups showed significantly less leakage than direct filling groups at the cervical margins (p < 0.001). 3. In composite resin inlay groups, there was no significant difference in microleakage between specimens by heat treating temperature and time (p > 0.05). 4. There was no significant difference in leakage between each groups at the occlusal margins (p > 0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.292-295
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• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.562-568
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• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• Restorative Dentistry and Endodontics
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• v.23 no.1
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• pp.346-356
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• 1998

The purpose of this study was to evaluate the sealing ability of various canal filling methods. Palatal roots of ninety extracted human maxillary molar teeth were resected at cementoenamel junction. Eighty of them were randomly assigned to four experimental groups, ten were served as positive and negative controls. All canals were prepared to # 40 using Profile. Experimental groups were obturated by lateral condensation technique, Thermafil technique, Continuous Wave of Condensation Technique, and down-pack & back-fill technique of Obtura-II, each with root canal sealer. Control groups were not obturated. Teeth were immersed in resorcinol-formaldehyde resin for 5 days at $4^{\circ}C$, and the resin was allowed to polymerize completely for 4 days at room temperature. Teeth were then ground horizontally at 1.5mm(level 1), 2.5mm(level 2), 3.5 mm(level 3) from the anatomical apex and examined with a stereomicroscope at ${\times}40$ magnification. The gap between the canal wall and the filling material, which was filled with the resin, was measured at each of the three levels. Each ratio of leakage was obtained by calculating the ratio of the area of the resin to the total area of the canal and was analyzed statistically (Rank-sum test). The results were as follows : 1. At the level 1, there was the greatest leakage in the Thermafil group and Obtura-II group, and the difference between the Obtura-II group and Continuous Wave of Condensation Technique group was statistically significant(p<0.05). 2. At the level 2, there was the least leakage in the Continuous Wave of Condensation Technique group, but there was no statistically significant difference between each group (p>0.05). 3. At the level 3, there was no statistically significant difference between each group(p>0.05).

• Journal of the Architectural Institute of Korea Structure & Construction
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• v.33 no.12
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• pp.91-98
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• 2017

In this study, the effect of window installation position in the residential building with the external insulation was numerically investigated in terms of insulation performance and heating/cooling energy consumption. For different window positions, 2-D heat transfer simulation was conducted to deduce the linear thermal transmittance, which was inputted to the dynamic energy simulation in order to analyze heating/cooling energy consumption. Simulation results showed that the linear thermal transmittance ranges from 0.05 W/mK to 0.7 W/mK, and is reduced as the window is installed near the external finish line. Indoor surface temperature and TDR analysis showed that the condensation risk is the lowest when the window is installed at the middle of the insulation and wall structure. It was also found that the window installation near the external finish can reduce the annual heating/cooling energy consumption by 12~16%, compared with the window installation near the interior finish. Although the window installation near the external finish can achieve the lowest heating/cooling energy consumption, it might lead to increased condensation risks unless additional insulation is applied. Thus, it can be concluded that the window should be installed near the insulation-wall structure junction, in consideration of the overall performance including energy consumption, condensation prevention and constructability.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.43-51
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• 2014

In 3-dimensional (3D) integrated package, thermal management is one of the critical issues due to the high heat flux generated by stacked multi-functional chips in miniature packages. In this study, we used numerical simulation method to analyze the thermal behaviors, and investigated the thermal issues of 3D package using TSV (through-silicon-via) technology for mobile application. The 3D integrated package consists of up to 8 TSV memory chips and one logic chip with a interposer which has regularly embedded TSVs. Thermal performances and characteristics of glass and silicon interposers were compared. Thermal characteristics of logic and memory chips are also investigated. The effects of numbers of the stacked chip, size of the interposer and TSV via on the thermal behavior of 3D package were investigated. Numerical analysis of the junction temperature, thermal resistance, and heat flux for 3D TSV package was performed under normal operating and high performance operation conditions, respectively. Based on the simulation results, we proposed an effective integration scheme of the memory and logic chips to minimize the temperature rise of the package. The results will be useful of design optimization and provide a thermal design guideline for reliable and high performance 3D TSV package.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.