• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.240-246
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• 2000

Surface layer properties such as composition, phase, hardness, and oxide layer condition are very important if the main failure mechanism of metals is wear. Generally, stable and dense oxide layers are known to decrease the wear rate of metals by prohibition of metallic junction occurred between bare metals. Addition of Si above 4 wt% to DCI(Ductile Cast Iron) is reported to enhance the significant oxidation resistance by forming the silicon-rich surface layer which inhibits further oxidation. And addition of up to 2 wt% Mo to high Si ductile iron produces significant increases in high temperature tensile strength, creep strength, thermal fatigue resistance and oxidation resistance. High pressure wear characteristics of unalloyed DCI(Ductile cast Iron), 4.46 wt% Si ductile iron, 4.3 wt% Si-0.52 wt% Mo ductile iron were investigated through unlubricated pin-on-disc wear test. Wear test was carried out at speed of 23m/min, under pressure of 3 MPa and 3.3 MPa. Wear surfaces of each specimen were observed by SEM to determine the wear mechanism under high pressure wear condition. Addition of Si 4.46 wt% severely deteriorated wear property of ductile iron compared to unalloyed DCI. But combined addition of Si 4.3 wt%andMo0.52wt%decreasedthefrictioncoefficient(${\mu}$)ofductileironsandremarkablydelayedthemild-severeweartransition.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.55-60
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• 2009

This paper deals with the analysis of characteristics of the scale non-uniformly formed on the surface of the steel during the steel production processes. The steel made at the high temperature contacts with the oxygen in the air, so forms the scale immediately. The scale has a role to protect the surface of the steel product as a oxide-layer, but the scale formed non-uniformly spoils the exterior of the steel product and occurs the problems about the next processes. There is a pickling process to remove the scale of the steel products, but the real situation is that the pickling process is not also based on the analysis of the characteristics of the scale. Therefore, this paper describe the procedures of the analysis of the scale more effectively using the radio-frequency wave. Using the radio-frequency wave, this paper introduce the experimentations to analyze the distributions of scale, the junction characteristics between the surface of steel and scale and the distributions of scale on the produced steel coil. Also, according to the simple simulations, this paper proves the proprieties about the above contents.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.9 s.339
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• pp.49-56
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• 2005

Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Journal of Environmental Science International
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• v.11 no.3
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• pp.169-176
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• 2002

The purpose of this study is designed to estimate the air quality of subway stations that have the underground platforms in Pusan Metropolitan City, from September to November 2000, over seven times. The subjects include Yonsan-dong station, Somyon station, Pusan station, Nampo-dong station, and Tushil station. The samplings were conducted at three points of each station, i.e. gate, ticket gates, and platforms. The major materials for analysis were CO, NO, NO$_2$, and $O_3$. The experiment was conducted at 7:00 pm with KIMOTO HS-seven Handy sampler and Tedlar Bag of SKC INC(U.S.A). In order to more fully understand station environments, we also measured temperature at each point. The results showed that $O_3$ average concentration at Yonsan-dong station was higher than others with 38~51 ppb. The average concentration of NO was high at ticket gate and platform at Somyon station(119 ppb, 122 ppb), Nampo-dong station(102 ppb, 100 ppb). These results show that the air pollution of stations with underground shopping malls was higher than others. At Somyon station having a junction station, NO and NO$_2$ concentration level of platform-2(noncrowded) was higher than platform-1(crowded). This is most likely due to the accumulation of air pollutants and inadequate ventilation systems.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.423-437
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• 1989

Al2O3/ZrO2 composites were prepared by precipitation method using Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O as starting materials and NH4OH as a precipitation agent. Al2O3/ZrO2 composites(series A) were prepared by mixing Al2O3 powder obtained by single precipitation method with ZrO2(＋3m/o Y2O3) powder obtained by co-predipitation method. Al2O3/ZrO2 composites (series B) were prepared by co-precipitation method using the three starting materials. In all cases, the composition was controlled as Al2O3-15v/o ZrO2(＋3m/o Y2O3). The composites of series A showed higher final relative densities than those of series B and tetagonal ZrO2 in all cases was retained to about 95% at room temperature. ZrO2 particles were coalesced more rapidly in grain boundary of Al2O3 than within Al2O3 grain. ZrO2 particles were located at 3-and 4-grain junction of Al2O3 and limited the grain growth of Al2O3. It was observed that MgO contributed to densification of Al2O3 but limited grain growth of Al2O3 by MgO was not remarkable. In all Al2O3/ZrO2 composites, exaggerated grain growth of Al2O3 was not observed and Al2O3/ZrO2 composites were found to have homogeneous microstructures.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).