• Korea-Australia Rheology Journal
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• v.17 no.2
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• pp.47-62
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• 2005

The present study deals with a mathematical model describing the dynamic response of heat and mass transfer in blood flow through bifurcated arteries under stenotic condition. The geometry of the bifurcated arterial segment possessing constrictions in both the parent and the daughter arterial lumen frequently appearing in the diseased arteries causing malfunction of the cardiovascular system, is formulated mathematically with the introduction of the suitable curvatures at the lateral junction and the flow divider. The blood flowing through the artery is treated to be Newtonian. The nonlinear unsteady flow phenomena is governed by the Navier-Stokes equations while those of heat and mass transfer are controlled by the heat conduction and the convection-diffusion equations respectively. All these equations together with the appropriate boundary conditions describing the present biomechanical problem following the radial coordinate transformation are solved numerically by adopting finite difference technique. The respective profiles of the flow field, the temperature and the concentration and their distributions as well are obtained. The influences of the stenosis, the arterial wall motion and the unsteady behaviour of the system in terms of the heat and mass transfer on the blood stream in the entire arterial segment are high­lighted through several plots presented at the end of the paper in order to illustrate the applicability of the present model under study.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.7 no.4
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• pp.44-50
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• 2011

Turbulent mixing of hot and cold coolants is one of the possible causes of high cycle thermal fatigue in piping systems of nuclear power plants. A typical situation for such mixing appears in turbulent flow through a T-junction. Since the high cycle thermal fatigue caused by thermal striping was not considered in the piping fatigue design in several nuclear power plants, it is very important to evaluate the effect of thermal striping on the integrity of mixing tees. In the present work, before conducting detailed evaluation, three thermal striping evaluation methodology suggested by EPRI, JSME and NESC are analyzed. Then, a by-pass pipe connected to the shutdown cooling system heat exchanger is investigated by using these evaluation methodology. Consequently, the resulting thermal stresses and the fatigue life of the mixing tee are reviewed and compared to each other. Futhermore, the limitation of each methodology are also presented in this paper.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.857-861
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• 2016

In this study, we proposed a new method that can be measure ECG (Electrocardiography) and PPG (Photoplethysmography) in realtime on the site of the wrist for check the state of health in daily life. For convenience measurement of ECG the lead I method was used on the wrist, and omit the reference junction ECG I was measured in the right hand and the left hand of the potential difference. Then the measured electrocardiogram was amplified by the differential amplifier and the signals were passed HPF, LPF, and BPF filters. For removing the PPG's noise from the Motion artifact and temperature, we apply the reflective photoelectric volume pulse wave measurement method using green LED as a light source. The circuits was designed to be able to check the waveform using higher active amplification method at weak signals. For the validation of our device, the measured signals were compared with E2-KIT on same time. The results shows that the error does not exceed the maximum one, most of the data is confirmed to be issued Peak inspection of the same number.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.5
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• pp.412-419
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• 2020

In this study, a 70 W buck converter using GaN metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. This converter exhibits over 97 % efficiency, high power density, and 48 V-to-12 V/1.2 V/1 V (triple output). Three gate drivers and six GaN MOSFETs are placed in a 1 ㎠ area to enhance power density and heat dissipation capacity. The theoretical switching and conduction losses of the GaN MOSFETs are calculated. Inductances, capacitances, and resistances for the output filters of the three buck converters are determined to achieve the desired current, voltage ripples, and efficiency. An equivalent circuit model for the thermal analysis of the proposed triple-output buck converter is presented. The junction temperatures of the GaN MOSFETs are estimated using the thermal model. Circuit operation and temperature analysis are evaluated using a circuit simulation tool and the finite element analysis results. An experimental test bed is built to evaluate the proposed design. The estimated switch and heat sink temperatures coincide well with the measured results. The designed buck converter has 130 W/in³ power density and 97.6 % efficiency.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.13-18
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• 2019

Superconducting junctions of topological insulator (TI) are expected to host Majorana bound state, which is essential for developing topological quantum information devices. In this study, we fabricated Josephson junctions (JJs) made of Sb-doped Bi2Se3 TI nanoribbon and PbIn superconducting electrodes. In the normal state, the axial magnetoresistance data exhibit periodic oscillations, so-called Aharonov-Bohm oscillations, due to a metallic surface state of TI nanoribbon. At low temperature of 1.5 K, the TI JJ reveals the superconducting proximity effects, such as the critical current and multiple Andreev reflections. Under the application of microwave, integer Shapiro steps are observed with satisfying the ac Josephson relation. Our observations indicate that highly-transparent superconducting contacts are formed at the interface between TI nanoribbon and conventional superconductor, which would be useful to explore Majorana bound state in TI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.863-867
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• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.535-540
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• 2014

Because of the development of LED technology, products due to high output and compact, the material with high thermal conductivity has been developed. Now that heat radiating part of the LED lamp is currently used for die casting of aluminum. The development of aluminum with excellent thermal conductivity is required. In this study, we measured the thermal properties and compared them while we produced the alloy by changing the component of die casting aluminum. From this study, the thermal conductivity and thermal resistance of the developed alloy were superior to die casting aluminum.