• 제목/요약/키워드: junction structure

검색결과 488건 처리시간 0.03초

CdSe/ZnS 나노결정 양자점 Pyrolysis 제조와 발광다이오드 소자로의 응용 (Pyrolysis Synthesis of CdSe/ZnS Nanocrystal Quantum Dots and Their Application to Light-Emitting Diodes)

  • 강승희;키란쿠마르;손기철;허훈회;김경현;허철;김의태
    • 한국재료학회지
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    • 제18권7호
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    • pp.379-383
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    • 2008
  • We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

Flip Chip Assembly Using Anisotropic Conductive Adhesives with Enhanced Thermal Conductivity

  • Yim, Myung-Jin;Kim, Hyoung-Joon;Paik, Kyung-Wook
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.9-16
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    • 2005
  • This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

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가상주행 시뮬레이터를 활용한 고속도로 차로유도선 적정 연장길이 산정 연구 (An Evaluation on the Length of Guidance Lane Marking on Expressways Using Virtual Driving Simulator)

  • 박제진;김덕녕
    • 한국ITS학회 논문지
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    • 제16권5호
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    • pp.1-11
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    • 2017
  • 국내 육상교통망의 중추적인 역할을 하는 고속도로는 $7{\times}9$ 형태로 양적, 질적 성장을 거듭하고 있다. 점차 복잡해지는 고속도로 기하구조에 대응하고자 차로유도선을 설치하여 운전자들의 보다 원활한 차로 변경을 유도하고 있으나 해당 시설의 설치기준이 부재하고, 그 효과 검증 또한 제한적으로 시행되고 있는 실정이다. 본 연구는 도로주행 시뮬레이터를 활용하여 주행안전성 측면에서 차로유도선의 효과를 재조명하고, 적정 연장 설치기준을 수립하는데 주된 초점을 맞추고 있다. 이를 위해, 피험자의 선호도를 조사하고, 가상의 주행환경에서 운전자의 차로 변경 행태를 분석하였다. 또한, 피험자가 차로변경 시 느끼는 편안함 정도를 계량화하기 위해 뇌파분석을 실시하였고, 도출된 결과에 대한 통계적 검증을 수행하였다. 본 연구는 차로유도선 설치기준 수립 시 기반자료로 활용될 것으로 기대한다.

SAW Self-Aligned Selectively Grown W-GAte) MOSFETs (SAW (Self-Algined Selectively Grown W-Gate) MOSFETs의 제작 및 특성 분석 (Fabrication and Analysis of (SAW Self-Aligned Selectively Grown W-gate) MOSFETs)

  • 황성민;노광명;정명준;허민;정하풍;서정원;박찬광;고요환;이대훈
    • 전자공학회논문지A
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    • 제32A권6호
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    • pp.82-90
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    • 1995
  • We proposed SAW (Self-Algined Selectively Grown W-Gate) MOSFET structure, and strudied electrical characteristics of the fabricated SAW MOSFETs. The threshold volgate of 0.21${\mu}$m SAW NMOSFET was 0.18 V and that of 0.24 ${\mu}$m SAW PMOSFET was -0.16 V. The subthreshold slope was 74 mV/decade for NMOSFET and 82 mV/decade for PMOSFET. The maximum transconductance of NMOSFET and PMOSFET, at V$_{GS}$=2.5 V and V$_{DS}$=1.5 V, were260 mS/mm and 122 mS/mm. The measured saturation drain current at V$_{GS}$=V$_{DS}$ =2.5 V was 0.574 mA/${\mu}$m for NMOSFET and -0.228 mA/${\mu}$m for PMOSFET. The gate resistance of SAW MOSFET was about m$\Omega$cm and the n+-p junction capacitance of SAW MOSFET was about 10% lowas than that of the conventional MOSFET's.

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Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

  • Cho, Dae-Hyung;Lee, Woo-Jung;Wi, Jae-Hyung;Han, Won Seok;Kim, Tae Gun;Kim, Jeong Won;Chung, Yong-Duck
    • ETRI Journal
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    • 제38권2호
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    • pp.265-271
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    • 2016
  • We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

키토산으로 표면처리된 인공치아의 충격전달에 관한 연구 (THE EFFECT OF A CHITOSAN COATING OF DENTAL IMPLANT ON THE SHOCK ABSORPTION UNDER IMPACT TEST)

  • 김기홍;이용찬;조병욱;권익찬;최귀원;배태수
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • 제27권1호
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    • pp.9-14
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    • 2001
  • With the object of providing a temporary artificial periodonal ligament-like membrane around the dental implant, 10 Branemark type implants were coated with commercially available chitosan(Fluka Co., Buchs, Switzerland) which has a molecular weight of 70,000 and 80% deacetylation degree. Once this bioactive hydrophillic polymer(chitosan) contacts with blood or wound fluids, it becomes swollen and penetrates into the adjacent cancellous bone. Thus the interface between implant and surrounding bone is completely filled with chitosan. This tight junction in early healing phase enhances primary stability. The chitosan coated dental implants were implanted into the fresh patella bones from porcine knees, since the thickness of cortical bone is relatively even and their cancellous structure is homogenous. To test the shock absorbing effect, 1mm delta-rogette strain gage was installed behind the implant. The results showed 1. The principal strain peak value directed to the impact of coated implant was 0.064 0.018(p<0.05) and that of uncoated implant was 0.095(0.032 p<0.05). 2. The peak time delay of coated implant was 0.056sec(0.011 p<0.05) and that of uncoated implant was 0.024sec(0.009 p<0.05). It can be reasoned from this results that the chitosan coating has a shock absorbing effect comparable with a temporary artificial periodontal ligament.

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Primary Structure of the Human VkII Regions Elicited by Haemophilus influenzae Type b Polysaccharide Vaccines; The J Gene Usage Is Restricted in Child Antibodies Using the A2 Gene

  • Yu, Kang-Yeol;Kim, Jin-Ho;Chung, Gook-Hyun
    • BMB Reports
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    • 제33권3호
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    • pp.249-255
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    • 2000
  • The Haemophilus influenzae type b (Hib) has been a major cause of bacterial meningitis in children who are less than two years old. The variable (V) region repertoire of adult Caucasian antibodies (Abs) to Hib polysaccharide (PS) has been characterized well. The majority of adult antibodies against Hib uses VL that is derived from the Vk gene A2 and have arginine at the N region. In order to explore the possibility those antibody responses to Hib-PS is variable in various age groups, we examined the VL regions of the antibodies to Hib-PS in Korean adults and children. We immunized Korean adults (n = 8) and children (n = 39) with Hib tetanus conjugated vaccines, isolated RNAs from the peripheral lymphocytes, and amplified the A2-derived VL regions by RT-PCR. The PCR products were subcloned and sequenced. Forty-seven out of 54 independent clones from children used the $J{\kappa}2$, or $J{\kappa}3$ gene in preference. The adults, however, used all of the $J{\kappa}$ genes evenly. With respect to the amino acid sequences of variable regions, adult $A2-J{\kappa}$ recombinants have a germline sequence. But, the 76th codon (AGC) of child $A2-J{\kappa}2$ recombinants was substituted with CGC (arginine) in most cases (88 %) and 77 percent of child clones using the $A2-J{\kappa}3$ genes have isoleucine-109 at the junction of $J{\kappa}-C{\kappa}$ instead of threonine that is found in a germline sequence. These results suggest that the mechanism of antibody production in young children is different from that of adults.

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유한요소법을 이용한 실리콘 기판에서의 공핍 영역 해석 (Depletion region analysis of silicon substrate using finite element methods)

  • 변기량;황호정
    • 대한전자공학회논문지SD
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    • 제39권1호
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    • pp.1-11
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    • 2002
  • 본 논문에서는 나노영역의 고해상도 도핑 농도 측정 장비 개발을 위해 공핍 근사 조건하 복잡한 계산 영역에서 공핍 영역을 간단히 계산할 수 있는 방법을 개발하였다. 개발된 공핍영역 계산 방법은 유한요소법을 이용한 적응분할 포아송 방정식 해석기를 사용하여 대전된 영역의 경계에서 전위가 0인 등고선과 일치하도록 하여 계산하는 방법이다. 이 방법의 타당성을 검증하기 위해 계산된 대전영역 및 전위분포가 공핍영역의 정의에 맞는지 확인하였으며, pn 접합에서의 공핍영역 깊이 및 MOS 구조에서 정전용량을 계산하여 비교해 본 결과 이론치와 정확히 일치함을 알 수 있었다. 이러한 Pn 접합 및 MOS 에서 공핍영역 계산 검증을 바탕으로 나노영역의 탐침을 장착한 SCM에서 전압에 따른 실리콘 내의 공핍영역 모양과 전위를 분석하여, 정전용랑 모델링을 하였으며, 이로부터 CV 곡선과 SCM의 출력인 dC/dV곡선을 계산하였다.

Protective Effect of Lactobacillus fermentum LA12 in an Alcohol-Induced Rat Model of Alcoholic Steatohepatitis

  • Kim, Byoung-Kook;Lee, In-Ock;Tan, Pei-Lei;Eor, Ju-Young;Hwang, Jae-Kwan;Kim, Sae-Hun
    • 한국축산식품학회지
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    • 제37권6호
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    • pp.931-939
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    • 2017
  • Alcoholic liver disease (ALD) is a complex multifaceted disease that involves oxidative stress and inflammation as the key mediators. Despite decades of intensive research, there are no FDA-approved therapies, and/or no effective cure is yet available. Probiotics have received increasing attention in the past few years due to their well-documented gastrointestinal health-promoting effects. Interestingly, emerging studies have suggested that certain probiotics may offer benefits beyond the gut. Lactobacillus fermentum LA12 has been previously demonstrated to play a role in inflammatory-related disease. However, the possible protective effect of L. fermentum LA12 on ALD still remain to be explored. Thus, the aim of this study was to evaluate the possible protective effect of L. fermentum LA12 on alcohol-induced gut barrier dysfunction and liver damage in a rat model of alcoholic steatohepatitis (ASH). Daily oral administration of L. fermentum LA12 in rat model of ASH for four weeks was shown to significantly reduced intestinal nitric oxide production and hyperpermeability. Moreover, small intestinal histological- and qRT-PCR analysis further revealed that L. fermentum LA12 treatment was capable of up-regulating the mRNA expression levels of tight junction proteins, thereby stimulating the restitution of barrier structure and function. Serum and hepatic analyses also revealed that the restoration of epithelial barrier function may prevent the leakage of endotoxin into the blood, subsequently improve liver function and hepatic steatosis in the L. fermentum LA12-treated rats. Altogether, results in this study suggest that L. fermentum LA12 may be used as a dietary adjunct for the prevention and treatment of ASH.

GaN Doherty 증폭기의 메모리 효과 보상을 통한 성능개선 (The Improvement of GaN Doherty Amplifier with Memory Effect Compensation)

  • 이석희;조갑제;방성일
    • 대한전자공학회논문지TC
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    • 제49권1호
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    • pp.47-52
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    • 2012
  • 전력증폭기는 기지국의 효율을 결정하는 중요한 요소이며, 효율성 제고를 위하여 GaN증폭소자를 사용한 Doherty 전력증폭기 구조에 대한 연구가 지속되고 있다. Doherty 전력증폭기의 메모리 효과는 선형성과 효율특성과 연관된 동작특성에 큰 영향을 미친다. 본 논문에서는 GaN Doherty 전력증폭기의 전열적인 비선형성 모델링과 전열적 메모리 효과가 GaN Doherty 증폭기의 왜곡형성과 보상에 대하여 연구하였다. GaN Doherty 증폭기의 전열적 메모리 특성을 모델링하기 위하여 순시적으로 소모되는 전력과 순시 접합온도의 정확한 관계식을 정립하였다. 제안된 모델의 파라미터로부터 GaN Doherty 전력증폭기의 비선형왜곡과 전열적 메모리 효과를 보상할 수 있는 전치왜곡선형화기 모델을 설계하였다. 제안된 모델의 성능평가는 37dBm GaN Doherty 전력증폭기와 ADS Tool을 사용하여 왜곡특성 성능개선정도를 검증하였다. 선형화된 GaN 전력증폭기의 2-tone 출력스펙트럼에서 약 16 dB의 왜곡개선효과를 보였다.