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Depletion region analysis of silicon substrate using finite element methods  

Byeon, Gi-Ryang (중앙대학교 전자전기학부)
Hwang, Ho-Jeong (중앙대학교 전자전기학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.1, 2002 , pp. 1-11 More about this Journal
Abstract
In this paper, new simple method for the calculation of depletion region under complex geometry and general purpose numerical simulator that could handle this were developed and applied in the analysis of SCM with nanoscale tip, which is a promising tool for high resolution dopant profiling. Our simple depletion region seeking algorithm alternatively switches material of elements to align ionized element boundary with contour of zero potential. To prove the validity of our method we examined whether our results satisfy the definition of depletion region and compared those with known values of un junction and MOS structure. By modeling of capacitance based on the shape of depletion region and potential distribution, we could calculate the CV curve and dC/dV curve between silicon substrate and nanoscale SCM tip.
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